INNER CARTON LABEL
Abstract: No abstract text available
Text: 107-68480 Packaging Specification 03Apr07 Rev F REC ASSY 2.5MM PITCH BATTERY I/P CARD CONNECTOR 1. PURPOSE 目的 Define the packaging specifiction and packaging method of REC ASSY 2.5MM PITCH BATTERY I/P CARD CONNECTOR. 订定 REC ASSY 2.5MM PITCH BATTERY I/P CARD CONNECTOR 产品之包装规格及包装方式。
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03Apr07
295X182X13
302X195X103
407x457
280X170X5
102X51
QR-ME-030B
INNER CARTON LABEL
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PDF
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NUTPLA
Abstract: nutplate 65651
Text: 107-68113 Packaging Specification 03Apr07 Rev G 2.5MM SLIM PITCH BATTERY CONNECTORS 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 2.5MM SLIM PITCH BATTERY Connector. 订定 2.5MM SLIM PITCH BATTERY Connectors 产品之包装规格及包装方式。
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03Apr07
QR-ME-030B
NUTPLA
nutplate
65651
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PDF
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RD10
Abstract: WTV3585
Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change
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WTV3585
03-Apr-07
RD10
WTV3585
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PDF
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Untitled
Abstract: No abstract text available
Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7008-BD Features Chip Layout 33.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.2 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature
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03-Apr-07
CGB7008-BD
CGB7008-BD
CGB7008-BD-000V
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PDF
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93c66e
Abstract: No abstract text available
Text: CAT93C66 4-Kb Microwire Serial CMOS EEPROM FEATURES DESCRIPTION High speed operation: 2MHz The CAT93C66 is a 4-Kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). Each register can be written (or read)
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CAT93C66
CAT93C66
MD-1089
93c66e
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PDF
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MBR10H100
Abstract: MBR10H90 MBRB10H100 MBRB10H90 MBRF10H100 MBRF10H90
Text: New Product MBR F,B 10H90 & MBR(F,B)10H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency
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Original
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10H90
10H100
O-220AC
ITO-220AC
MBR10H90
MBR10H100
MBRF10H90
MBRF10H100
O-263AB
J-STD-020C,
MBR10H100
MBR10H90
MBRB10H100
MBRB10H90
MBRF10H100
MBRF10H90
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PDF
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MBR20H100CT
Abstract: MBR20H90CT MBRF20H100CT MBRF20H90CT
Text: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2
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20H90CT
20H100CT
O-220AB
ITO-220AB
MBR20H90CT
MBR20H100CT
MBRF20H90CT
MBRF20H100CT
O-263AB
J-STD-020C,
MBR20H100CT
MBR20H90CT
MBRF20H100CT
MBRF20H90CT
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PDF
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MBRB10100-E3
Abstract: MBR10100 MBR1090 MBRB10100 MBRB1090 MBRF10100 MBRF1090 b10100
Text: MBR F,B 1090 & MBR(F,B)10100 Vishay General Semiconductor High-Voltage Schottky Rectifier TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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O-220AC
ITO-220AC
MBR1090
MBR10100
MBRF1090
MBRF10100
J-STD-020C,
O-263AB
ITO-220AC
MBRB10100-E3
MBR10100
MBR1090
MBRB10100
MBRB1090
MBRF10100
MBRF1090
b10100
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PDF
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Untitled
Abstract: No abstract text available
Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7009-BD Features Chip Layout 35.3 dBm Output IP3 @ 850 MHz 3.9 dB Noise Figure @ 850 MHz 16.8 dB Gain @ 850 MHz 19.2 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature
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03-Apr-07
CGB7009-BD
CGB7009-BD
CGB7009-BD-000V
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PDF
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Untitled
Abstract: No abstract text available
Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7007-BD Features Chip Layout 34.0 dBm Output IP3 @ 850 MHz 4.5 dB Noise Figure @ 850 MHz 19.0 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature
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Original
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03-Apr-07
CGB7007-BD
CGB7007-BD
CGB7007-BD-000V
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PDF
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M37548G3FP
Abstract: VT-200 k 786
Text: 740 03-Apr-07 Evaluation of Subsystem Clock Oscillation Circuit [M37548G3FP-20P] LSSOP 4.4x6.5 0.65mm pitch Measurement conditions :5.5V, 3.3V Model Vcc=1.8V to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance
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03-Apr-07
M37548G3FP-20P]
VT-200
768kHz
/-20x10-6
50kohm
1x10-6W
VT-200)
M37548G3FP
VT-200
k 786
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PDF
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f 93c66
Abstract: 208-mils 93C66 93c66 6 AEC-Q100 CAT93C66 93C66vi CAT93C66LI-G
Text: CAT93C66 4-Kb Microwire Serial CMOS EEPROM FEATURES DESCRIPTION High speed operation: 2MHz The CAT93C66 is a 4-Kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). Each register can be written (or read)
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Original
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CAT93C66
CAT93C66
MD-1089
f 93c66
208-mils
93C66
93c66 6
AEC-Q100
93C66vi
CAT93C66LI-G
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PDF
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CGB7008-BD
Abstract: CGB7008-BD-000V DM6030HK TS3332LD 9746
Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7008-BD Features Chip Layout 33.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.2 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature
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Original
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03-Apr-07
CGB7008-BD
CGB7008-BD
CGB7008-BD-000V
CGB7008-BD-000V
DM6030HK
TS3332LD
9746
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PDF
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Digital Weighing Scale schematic
Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
Text: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0086-0802
Digital Weighing Scale schematic
tedea 1042
Tedea-Huntleigh model 1022
schematic diagram to convert 230VAC to 5VDC POWER
tedea huntleigh load cell 3410
tedea load cell 1004
Weighing scale sensor gozinta
Tedea-Huntleigh 9010
manual weight indicator vt200
tedea huntleigh load cell 3411
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PDF
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CGB7009-BD
Abstract: CGB7009-BD-000V DM6030HK TS3332LD
Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7009-BD Features Chip Layout 35.3 dBm Output IP3 @ 850 MHz 3.9 dB Noise Figure @ 850 MHz 16.8 dB Gain @ 850 MHz 19.2 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature
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Original
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03-Apr-07
CGB7009-BD
CGB7009-BD
CGB7009-BD-000V
CGB7009-BD-000V
DM6030HK
TS3332LD
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PDF
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CGB7010-BD
Abstract: CGB7010-BD-000V DM6030HK TS3332LD sharp 9759 d
Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7010-BD Features Chip Layout 35.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.5 dB Gain @ 850 MHz 20.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature
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Original
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03-Apr-07
CGB7010-BD
CGB7010-BD
CGB7010-BD-000V
CGB7010-BD-000V
DM6030HK
TS3332LD
sharp 9759 d
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PDF
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MBRF2090CT
Abstract: 20100CT MBR20100CT MBR2090CT MBRF20100CT
Text: MBR F,B 2090CT & MBR(F,B)20100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier TO-220AB FEATURES ITO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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2090CT
20100CT
O-220AB
ITO-220AB
MBR2090CT
MBR20100CT
MBRF2090CT
MBRF20100CT
J-STD-020C,
O-263AB
MBRF2090CT
20100CT
MBR20100CT
MBR2090CT
MBRF20100CT
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PDF
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Untitled
Abstract: No abstract text available
Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7010-BD Features Chip Layout 35.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.5 dB Gain @ 850 MHz 20.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature
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Original
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03-Apr-07
CGB7010-BD
CGB7010-BD
CGB7010-BD-000V
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PDF
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CGB7007-BD
Abstract: CGB7007-BD-000V DM6030HK TS3332LD 110L1
Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7007-BD Features Chip Layout 34.0 dBm Output IP3 @ 850 MHz 4.5 dB Noise Figure @ 850 MHz 19.0 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature
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Original
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03-Apr-07
CGB7007-BD
CGB7007-BD
CGB7007-BD-000V
CGB7007-BD-000V
DM6030HK
TS3332LD
110L1
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PDF
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SI3456DV-T1-E3
Abstract: Si3456BDV Si3456BDV-T1 Si3456BDV-T1-E3 Si3456DV Si3456DV-T1
Text: Specification Comparison Vishay Siliconix Si3456BDV vs. Si3456DV Description: N-Channel, 30 V D-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3456BDV-T1 Replaces Si3456DV-T1 Si3456BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3456DV-T1-E3 (Lead (Pb)-free version)
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Si3456BDV
Si3456DV
Si3456BDV-T1
Si3456DV-T1
Si3456BDV-T1-E3
Si3456DV-T1-E3
03-Apr-07
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. ES MATER I AL : HOUSING: CONTACTS DIST RE V ISIONS 00 LTR DESCRIPTION DATE DWN APVD REVISED PER EC R-07 - 007343
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OCR Scan
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03APR07
20JUL07
250CT07
AR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. GP DIST R E V I S I O N S 00 LTR DESCRIPTION Al DATE DWN APVD REVISED PER E C O - 06 - 0 0 6 6 7 4 2 8 MA R 0 6
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OCR Scan
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03APR07
I4FEB06
14FEB06
AR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. ES MATER I AL : HOUSI NG: CONTACTS DIST R E V ISIONS 00 LTR DESCRIPTION DATE DWN APVD REVISED PER E C O - 0 6 -0 I 1603
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OCR Scan
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03APR07
20JUL07
250CT07
AR2000
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PDF
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Untitled
Abstract: No abstract text available
Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. GP MATER I AL : HOUSI NG: CONTACTS DIST R E V I S I O N S 00 LTR DESCRIPTION DATE DWN APVD REVISED PER E C O - 0 6 -0 I 1603
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OCR Scan
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ECR-07-0
03APR07
20JUL07
13AUG07
I4FEB06
14FEB06
AR2000
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PDF
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