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    INNER CARTON LABEL

    Abstract: No abstract text available
    Text: 107-68480 Packaging Specification 03Apr07 Rev F REC ASSY 2.5MM PITCH BATTERY I/P CARD CONNECTOR 1. PURPOSE 目的 Define the packaging specifiction and packaging method of REC ASSY 2.5MM PITCH BATTERY I/P CARD CONNECTOR. 订定 REC ASSY 2.5MM PITCH BATTERY I/P CARD CONNECTOR 产品之包装规格及包装方式。


    Original     		PDF 03Apr07 295X182X13 302X195X103 407x457 280X170X5 102X51 QR-ME-030B INNER CARTON LABEL

    NUTPLA

    Abstract: nutplate 65651
    Text: 107-68113 Packaging Specification 03Apr07 Rev G 2.5MM SLIM PITCH BATTERY CONNECTORS 1. PURPOSE 目的 Define the packaging specifiction and packaging method of 2.5MM SLIM PITCH BATTERY Connector. 订定 2.5MM SLIM PITCH BATTERY Connectors 产品之包装规格及包装方式。


    Original     		PDF 03Apr07 QR-ME-030B NUTPLA nutplate 65651

    RD10

    Abstract: WTV3585
    Text: WTV3585 N AND P-Channel Enhancement Mode POWER MOSFET N-CHANNEL DRAIN SOURCE VOLTAGE 20 VOLTAGE DRAIN CURRENT 3.5 AMPERES 6 DRAIN P b Lead Pb -Free 1 GATE P-CHANNEL DRAIN SOURCE VOLTAGE -20 VOLTAGE DRAIN CURRENT -2.5 AMPERES 5 SOURCE Features: 4 DRAIN * Low Gate change


    Original     		PDF WTV3585 03-Apr-07 RD10 WTV3585

    Untitled

    Abstract: No abstract text available
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7008-BD Features Chip Layout 33.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.2 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		PDF 03-Apr-07 CGB7008-BD CGB7008-BD CGB7008-BD-000V

    93c66e

    Abstract: No abstract text available
    Text: CAT93C66 4-Kb Microwire Serial CMOS EEPROM FEATURES DESCRIPTION „ High speed operation: 2MHz The CAT93C66 is a 4-Kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). Each register can be written (or read)


    Original     		PDF CAT93C66 CAT93C66 MD-1089 93c66e

    MBR10H100

    Abstract: MBR10H90 MBRB10H100 MBRB10H90 MBRF10H100 MBRF10H90
    Text: New Product MBR F,B 10H90 & MBR(F,B)10H100 Vishay General Semiconductor High-Voltage Schottky Rectifier High Barrier Technology for improved high temperature performance TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency


    Original     		PDF 10H90 10H100 O-220AC ITO-220AC MBR10H90 MBR10H100 MBRF10H90 MBRF10H100 O-263AB J-STD-020C, MBR10H100 MBR10H90 MBRB10H100 MBRB10H90 MBRF10H100 MBRF10H90

    MBR20H100CT

    Abstract: MBR20H90CT MBRF20H100CT MBRF20H90CT
    Text: MBR F,B 20H90CT & MBR(F,B)20H100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier High barrier technology for improved high temperature performance TO-220AB ITO-220AB MBR20H90CT MBR20H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2


    Original     		PDF 20H90CT 20H100CT O-220AB ITO-220AB MBR20H90CT MBR20H100CT MBRF20H90CT MBRF20H100CT O-263AB J-STD-020C, MBR20H100CT MBR20H90CT MBRF20H100CT MBRF20H90CT

    MBRB10100-E3

    Abstract: MBR10100 MBR1090 MBRB10100 MBRB1090 MBRF10100 MBRF1090 b10100
    Text: MBR F,B 1090 & MBR(F,B)10100 Vishay General Semiconductor High-Voltage Schottky Rectifier TO-220AC FEATURES • Guardring for overvoltage protection ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF O-220AC ITO-220AC MBR1090 MBR10100 MBRF1090 MBRF10100 J-STD-020C, O-263AB ITO-220AC MBRB10100-E3 MBR10100 MBR1090 MBRB10100 MBRB1090 MBRF10100 MBRF1090 b10100

    Untitled

    Abstract: No abstract text available
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7009-BD Features Chip Layout 35.3 dBm Output IP3 @ 850 MHz 3.9 dB Noise Figure @ 850 MHz 16.8 dB Gain @ 850 MHz 19.2 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		PDF 03-Apr-07 CGB7009-BD CGB7009-BD CGB7009-BD-000V

    Untitled

    Abstract: No abstract text available
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7007-BD Features Chip Layout 34.0 dBm Output IP3 @ 850 MHz 4.5 dB Noise Figure @ 850 MHz 19.0 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		PDF 03-Apr-07 CGB7007-BD CGB7007-BD CGB7007-BD-000V

    M37548G3FP

    Abstract: VT-200 k 786
    Text: 740 03-Apr-07 Evaluation of Subsystem Clock Oscillation Circuit [M37548G3FP-20P] LSSOP 4.4x6.5 0.65mm pitch Measurement conditions :5.5V, 3.3V Model Vcc=1.8V to 5.5V :VT-200 IC Frequency :Fo=32.768kHz Frequency tolerance :dF/Fo= +/-20x10-6 Load capacitance


    Original     		PDF 03-Apr-07 M37548G3FP-20P] VT-200 768kHz /-20x10-6 50kohm 1x10-6W VT-200) M37548G3FP VT-200 k 786

    f 93c66

    Abstract: 208-mils 93C66 93c66 6 AEC-Q100 CAT93C66 93C66vi CAT93C66LI-G
    Text: CAT93C66 4-Kb Microwire Serial CMOS EEPROM FEATURES DESCRIPTION „ High speed operation: 2MHz The CAT93C66 is a 4-Kb CMOS Serial EEPROM device which is organized as either 256 registers of 16 bits ORG pin at VCC or 512 registers of 8 bits (ORG pin at GND). Each register can be written (or read)


    Original     		PDF CAT93C66 CAT93C66 MD-1089 f 93c66 208-mils 93C66 93c66 6 AEC-Q100 93C66vi CAT93C66LI-G

    CGB7008-BD

    Abstract: CGB7008-BD-000V DM6030HK TS3332LD 9746
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7008-BD Features Chip Layout 33.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.2 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		PDF 03-Apr-07 CGB7008-BD CGB7008-BD CGB7008-BD-000V CGB7008-BD-000V DM6030HK TS3332LD 9746

    Digital Weighing Scale schematic

    Abstract: tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411
    Text: VISHAY INTERTECHN O L O G Y , INC . INTERACTIVE data book load cells and indicators vishay transDucers vse-db0086-0802 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents


    Original     		PDF vse-db0086-0802 Digital Weighing Scale schematic tedea 1042 Tedea-Huntleigh model 1022 schematic diagram to convert 230VAC to 5VDC POWER tedea huntleigh load cell 3410 tedea load cell 1004 Weighing scale sensor gozinta Tedea-Huntleigh 9010 manual weight indicator vt200 tedea huntleigh load cell 3411

    CGB7009-BD

    Abstract: CGB7009-BD-000V DM6030HK TS3332LD
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7009-BD Features Chip Layout 35.3 dBm Output IP3 @ 850 MHz 3.9 dB Noise Figure @ 850 MHz 16.8 dB Gain @ 850 MHz 19.2 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		PDF 03-Apr-07 CGB7009-BD CGB7009-BD CGB7009-BD-000V CGB7009-BD-000V DM6030HK TS3332LD

    CGB7010-BD

    Abstract: CGB7010-BD-000V DM6030HK TS3332LD sharp 9759 d
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7010-BD Features Chip Layout 35.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.5 dB Gain @ 850 MHz 20.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		PDF 03-Apr-07 CGB7010-BD CGB7010-BD CGB7010-BD-000V CGB7010-BD-000V DM6030HK TS3332LD sharp 9759 d

    MBRF2090CT

    Abstract: 20100CT MBR20100CT MBR2090CT MBRF20100CT
    Text: MBR F,B 2090CT & MBR(F,B)20100CT Vishay General Semiconductor Dual Common-Cathode High-Voltage Schottky Rectifier TO-220AB FEATURES ITO-220AB • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability


    Original     		PDF 2090CT 20100CT O-220AB ITO-220AB MBR2090CT MBR20100CT MBRF2090CT MBRF20100CT J-STD-020C, O-263AB MBRF2090CT 20100CT MBR20100CT MBR2090CT MBRF20100CT

    Untitled

    Abstract: No abstract text available
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7010-BD Features Chip Layout 35.5 dBm Output IP3 @ 850 MHz 3.2 dB Noise Figure @ 850 MHz 21.5 dB Gain @ 850 MHz 20.0 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		PDF 03-Apr-07 CGB7010-BD CGB7010-BD CGB7010-BD-000V

    CGB7007-BD

    Abstract: CGB7007-BD-000V DM6030HK TS3332LD 110L1
    Text: DC-6.0 GHz InGaP HBT MMIC Matched Gain Block Amplifier April 2007 - Rev 03-Apr-07 CGB7007-BD Features Chip Layout 34.0 dBm Output IP3 @ 850 MHz 4.5 dB Noise Figure @ 850 MHz 19.0 dB Gain @ 850 MHz 18.8 dBm P1dB @ 850 MHz Low Performance Variation Over Temperature


    Original     		PDF 03-Apr-07 CGB7007-BD CGB7007-BD CGB7007-BD-000V CGB7007-BD-000V DM6030HK TS3332LD 110L1

    SI3456DV-T1-E3

    Abstract: Si3456BDV Si3456BDV-T1 Si3456BDV-T1-E3 Si3456DV Si3456DV-T1
    Text: Specification Comparison Vishay Siliconix Si3456BDV vs. Si3456DV Description: N-Channel, 30 V D-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3456BDV-T1 Replaces Si3456DV-T1 Si3456BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3456DV-T1-E3 (Lead (Pb)-free version)


    Original     		PDF Si3456BDV Si3456DV Si3456BDV-T1 Si3456DV-T1 Si3456BDV-T1-E3 Si3456DV-T1-E3 03-Apr-07

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. ES MATER I AL : HOUSING: CONTACTS DIST RE V ISIONS 00 LTR DESCRIPTION DATE DWN APVD REVISED PER EC R-07 - 007343


    OCR Scan     		PDF 03APR07 20JUL07 250CT07 AR2000

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. GP DIST R E V I S I O N S 00 LTR DESCRIPTION Al DATE DWN APVD REVISED PER E C O - 06 - 0 0 6 6 7 4 2 8 MA R 0 6


    OCR Scan     		PDF 03APR07 I4FEB06 14FEB06 AR2000

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. ES MATER I AL : HOUSI NG: CONTACTS DIST R E V ISIONS 00 LTR DESCRIPTION DATE DWN APVD REVISED PER E C O - 0 6 -0 I 1603


    OCR Scan     		PDF 03APR07 20JUL07 250CT07 AR2000

    Untitled

    Abstract: No abstract text available
    Text: 2 THIS £L DRAWING IS UNPUBLISHED. BY C O P Y R I G H T 20 RELEASED TYCO ELECTRONICS CORPORATION. ALL FOR 20 PUBLICATION R 1G H T S LOC RESERVED. GP MATER I AL : HOUSI NG: CONTACTS DIST R E V I S I O N S 00 LTR DESCRIPTION DATE DWN APVD REVISED PER E C O - 0 6 -0 I 1603


    OCR Scan     		PDF ECR-07-0 03APR07 20JUL07 13AUG07 I4FEB06 14FEB06 AR2000