KM48S8030BT-GL
Abstract: nn5264805tt-b60 KM48S2020CT-GL 0364804CT3B-260 d4564163g5 nt56v1680a0t D4564841g5 81F641642B-103FN M5M4V16S30DTP Siemens 9832
Text: PC100 SDRAM Component Testing Summary As part of Intel’s enabling process, the following test/characterization procedure has been implemented on PC100 SDRAM components. A small sample of components 2-5 devices have been tested under the conditions described in Table 2.
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PC100
KM48S8030BT-GL
nn5264805tt-b60
KM48S2020CT-GL
0364804CT3B-260
d4564163g5
nt56v1680a0t
D4564841g5
81F641642B-103FN
M5M4V16S30DTP
Siemens 9832
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Untitled
Abstract: No abstract text available
Text: IBM0364404 IBM0364804 IBM0364164 IBM03644B4 Prelim inary 6 4 M b S y n c h r o n o u s D R A M - D ie R e v i s i o n B • M ultiple Burst Read with Single W rite O ption Features • A utom atic and C ontrolled Precharge C om m and • High Perform ance:
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IBM0364404
IBM0364804
IBM0364164
IBM03644B4
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0364804CT3B-360
Abstract: No abstract text available
Text: IBM0364404 IBM0364804 IBM0364164 IBM03644B4 Preliminary 64Mb Synchronous DRAM - Die Revision B Features • Multiple Burst Read with Single Write Option • Automatic and Controlled Precharge Command • High Performance: -26 0, C L = 2 ,3 ! -3 6 0 , C L = 3
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IBM0364404
IBM0364804
IBM0364164
IBM03644B4
0364804CT3B-360
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0364804PT3B
Abstract: No abstract text available
Text: I =¥= = = = ’= IBM0364404 IBM0364804 IBM0364164 IBM03644B4 P relim inary -68 64Mb S ynchronous DRAM - Die R evision B Features • Programmable Wrap: Sequential or Interleave • High Performance: • Multiple Burst Read with Single Write Option I fcK i Clock Frequency
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IBM0364404
IBM0364804
IBM0364164
IBM03644B4
0364804PT3B
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