BSC030P03NS3
Abstract: 030P3NS
Text: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 A • V GS=25 V, specially suited for notebook applications
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BSC030P03NS3
030P3NS
030P3NS
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030P3NS
Abstract: IEC61249-2-21 JESD22 JESD22-A114 BSC030P03NS3
Text: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 • V GS=25 V, specially suited for notebook applications
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Original
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PDF
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BSC030P03NS3
IEC61249-2-21
030P3NS
030P3NS
IEC61249-2-21
JESD22
JESD22-A114
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030P3NS
Abstract: BSC030P03NS3
Text: BSC030P03NS3 G OptiMOSTM P3 Power-Transistor Product Summary Features • single P-Channel in SuperSO8 • Qualified according JEDEC 1 for target applications V DS -30 V R DS on),max 3.0 mΩ ID -100 A • V GS=25 V, specially suited for notebook applications
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Original
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PDF
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BSC030P03NS3
030P3NS
030P3NS
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