Untitled
Abstract: No abstract text available
Text: ABX2005/06/07/08/09 Low Phase Noise XO with multipliers for 100-200MHz Fund or 3rdOT Xtal Universal Low Phase Noise IC’s PIN CONFIGURATION (Top View) XOUT 3 SEL3^ 4 SEL2^ 5 OE 6 GND 7 GND 8 XIN 13 XOUT 14 SEL2^ 15 OE 16 12 11 10 GND CLKC VDD CLKT GND GND
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ABX2005/06/07/08/09
100-200MHz
100MHz
200MHz
200MHz
400MHz
700MHz
800MHz-1GHz
ABX2009
ABX2007
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Untitled
Abstract: No abstract text available
Text: ABV2005/-06/-07/-08/-09 Low Phase Noise VCXO with multipliers for 100-200MHz Fund Xtal XOUT 3 SEL3^ 4 SEL2^ 5 OE 6 VCON 7 GND 8 DESCRIPTION SEL 14 SEL2^ 15 OE 16 GND CLKC VDD CLKT GND GND 11 10 9 8 GND 7 CLKC 6 VDD 5 CLKT 1 2 3 4 GND ABV200x OUTPUT ENABLE LOGICAL LEVELS
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ABV2005/-06/-07/-08/-09
100-200MHz
ABV200x
ABV2006
ABV2005/-06/-07/-08/-09
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Untitled
Abstract: No abstract text available
Text: PL602-35/-37/-38/-39 750kHz – 800MHz Low Phase Noise Multiplier XO Universal Low Phase Noise IC’s FEATURES 1 XIN 2 XOUT 3 SEL3^ 4 SEL2^ 5 OE 6 GND 7 GND 8 1 6 1 5 1 4 1 3 1 2 1 1 1 SEL0^ SEL1^ GND CLKC VDD CLKT GND 9 GND VDD / GND* SEL0^ / VDD* SEL1^ TSSOP-16L
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PL602-35/-37/-38/-39
750kHz
800MHz
750kHz
-127dBc/Hz
52MHz
10kHz
-115dBc/Hz
08MHz
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PL602-37
Abstract: PL602-35QC-R P602-39 PL602-39OC-R
Text: PL602-35/-37/-38/-39 750kHz – 800MHz Low Phase Noise Multiplier XO Universal Low Phase Noise IC’s FEATURES 1 XIN 2 XOUT 3 SEL3^ 4 SEL2^ 5 OE 6 GND 7 GND 8 1 6 1 5 1 4 1 3 1 2 1 1 1 SEL0^ SEL1^ GND CLKC VDD CLKT GND GND 9 VDD / GND* SEL0^ / VDD* SEL1^ TSSOP-16L
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PL602-35/-37/-38/-39
750kHz
800MHz
TSSOP-16L
PL602-3x
PL602-35
PL602-37
PL602-38
PL602-39
PL602-37
PL602-35QC-R
P602-39
PL602-39OC-R
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datasheet for 4x4 keypad
Abstract: datasheet keypad 4x4 KEYPAD 4 X 4 features keypad 4x4 CM2500-05 CM2500-05QF SW11 CMOS Multiplexer
Text: CM2500-05 CMOS Multiplexer for Keypad Switches Features Product Description • • • • • • The CM2500-05QF is a CMOS multiplexer for keypad switches. The device is functionally equivalent to a fivediode pair network. However, each channel in this network has virtually no voltage drop from input to output
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CM2500-05
CM2500-05QF
16-lead
datasheet for 4x4 keypad
datasheet keypad 4x4
KEYPAD 4 X 4 features
keypad 4x4
CM2500-05
SW11
CMOS Multiplexer
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CHU4164-QEG
Abstract: "UP Converter" 2loif U4164 AN0017 MO-220
Text: CHU4164-QEG RoHS COMPLIANT 17-27GHz Up Converter GaAs Monolithic Microwave IC in SMD package Description The CHU4164-QEG is an I/Q up converter, which integrates a balanced cold fet mixer, and a time two multiplier. It is designed for a wide range of applications,
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CHU4164-QEG
17-27GHz
CHU4164-QEG
U4164
17-27GHz
24dBm
DSCHU4164QEG9250
"UP Converter"
2loif
U4164
AN0017
MO-220
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Untitled
Abstract: No abstract text available
Text: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA3667aQDG
7-20GHz
CHA3667aQDG
A3667A
YYWW11
7-20GHz
20dBm
175mA
24L-QFN4X4
DSCHA3667aQDG0158
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CHA3667aQDG
Abstract: AN0017 MO-220 7-18GHz 7-20GHz qfn 88 718G CHA3667 QFN 64 PACKAGE rth
Text: CHA3667aQDG RoHS COMPLIANT 7-20GHz Medium Power Amplifier GaAs Monolithic Microwave IC in SMD package Description The CHA3667aQDG is a wide band monolithic medium power amplifier. It is designed for a wide range of applications, from military to commercial communication
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CHA3667aQDG
7-20GHz
CHA3667aQDG
A3667A
7-20GHz
20dBm
175mA
24L-QFN4X4
DSCHA3667aQDG0158
AN0017
MO-220
7-18GHz
qfn 88
718G
CHA3667
QFN 64 PACKAGE rth
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transistor smd qe
Abstract: P1020 15MPA0566 CMM1118-QT XP1020-QE XP1020-QE-0N00 XP1020-QE-EV1 XU1005-QD
Text: 11.0-19.0 GHz GaAs MMIC Power Amplifier, QFN P1020-QE January 2007 - Rev 26-Jan-07 Features 17.0 dB Small Signal Gain +27.0 dBm Saturated Output Power SMD, 3x3 mm QFN Package RoHS Compliant 100% RF, DC and Output Power Testing General Description Mimix Broadband’s two stage 11.0-19.0 GHz GaAs
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P1020-QE
26-Jan-07
XP1020-QE-0N00
XP1020-QE-EV1
XP1020-QE
transistor smd qe
P1020
15MPA0566
CMM1118-QT
XP1020-QE-0N00
XP1020-QE-EV1
XU1005-QD
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5gHz SMD RF Mixer
Abstract: AN0017 8GC2
Text: CHR3663-QEG RoHS COMPLIANT 17-24GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package Description The CHR3663-QEG is a multifunction part, which integrates a balanced cold FET mixer, a multiplier by two, and a RF LNA including gain control.
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CHR3663-QEG
17-24GHz
CHR3663-QEG
R3663
17-24GHz
15dBc
24LQFN4x5
DSCHR3663-QEG0097
5gHz SMD RF Mixer
AN0017
8GC2
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B1007-QT
Abstract: No abstract text available
Text: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT June 2007 - Rev 06-Jun-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure 100% RF, DC and Output Power Testing
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06-Jun-07
B1007-QT
B1007-QT
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B1007-QT
Abstract: B1007 XB1007-QT
Text: 4.0-11.0 GHz GaAs MMIC Buffer Amplifier, QFN B1007-QT September 2007 - Rev 15-Sep-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 23.0 dB Small Signal Gain +20.0 dBm P1dB Compression Point 4.5 dB Noise Figure Variable Gain with Adjustable Bias
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B1007-QT
15-Sep-07
B1007-QT
B1007
XB1007-QT
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R3664
Abstract: AN0017
Text: CHR3664-QEG RoHS COMPLIANT 17-27GHz Integrated Down Converter GaAs Monolithic Microwave IC in SMD package Description The CHR3664-QEG is a multifunction part, which integrates a balanced cold FET mixer, a multiplier by two, and a RF LNA including gain control. It is designed for a wide range
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CHR3664-QEG
17-27GHz
CHR3664-QEG
R3664
17-27GHz
15dBc
24LQFN4x5
DSCHR3664-QEG0097-
R3664
AN0017
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B1008-QT
Abstract: XB1008-QT
Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT September 2007 - Rev 12-Sep-07 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias
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B1008-QT
12-Sep-07
B1008-QT
XB1008-QT
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QFN50P3X3-16P
Abstract: QFN50 smd transistor marking j6 F QFN 3X3 smd code v2 smd marking code j6 ke marking transistor smd marking KE J842 03 07 qfn 3x3
Text: 5 4 3 2 1 13 11 9 7 5 3 1 13 11 9 7 VDD 5 3 V2 1 V1 B C4 DNI 9 GND 5 1M R1 1M C3 DNI C2 DNI 2 J6 SMASM 1 C1 DNI Unlabeled Test Line UNLESS OTHERWISE SPECIFIED DIMENSIONS AND TOLERANCES ARE IN INCHES AND APPLY TO THE FINISHED PART TOLERANCES ARE: FRACTIONS
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QFN50P3X3-16P
72POS
1/16W,
PZC36DABN
J502-ND
20Components/Web
20Data/142-0701-801,
S2021-36-ND
20Data/PZC36DABN
com/catalog/specsheets/XC-600033
QFN50P3X3-16P
QFN50
smd transistor marking j6
F QFN 3X3
smd code v2
smd marking code j6
ke marking transistor
smd marking KE
J842
03 07 qfn 3x3
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QFN "100 pin" PACKAGE
Abstract: JEDEC qfn tape QFN 3x4 SOT23 JEDEC standard orientation MP transistor SOIC16 SOIC24 SOIC28 TSSOP16 TSSOP28
Text: Tape & Reel Packaging for Automated Handling The Future of Analog IC Technology General Overview Surface mount products are available in Tape & Reel packaging. Below is a table of standard Tape & Reel configurations. These packages conform to EIA-481-1/2/3 and JEDEC standards. All products are lead
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EIA-481-1/2/3
TSOT23
QFN "100 pin" PACKAGE
JEDEC qfn tape
QFN 3x4
SOT23 JEDEC standard orientation
MP transistor
SOIC16
SOIC24
SOIC28
TSSOP16
TSSOP28
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XB1008-QT-0G0T
Abstract: B1008-QT XB1008-QT XB1008-QT-0G00 XB1008-QT-EV1
Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT August 2008 - Rev 17-Aug-08 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias
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B1008-QT
17-Aug-08
XB1008-QT
XB1008-QT-0G0T
B1008-QT
XB1008-QT-0G00
XB1008-QT-EV1
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xp1080
Abstract: XB1014-QT-0G0T XB1014-QT
Text: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT January 2011 - Rev 10-Jan-11 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description
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10-Jan-11
B1014-QT
XB1014-QT
xp1080
XB1014-QT-0G0T
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Untitled
Abstract: No abstract text available
Text: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT December 2009 - Rev 10-Dec-09 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description
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10-Dec-09
B1014-QT
XB1014-QT
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XB1014-QT
Abstract: VD-12
Text: 37.0-40.0 GHz GaAs MMIC Buffer Amplifier, QFN B1014-QT January 2010 - Rev 22-Jan-10 Features 21.0 dB Small Signal Gain +22.0 dBm Psat +20.0 dBm P1dB +30.5 dBm Output IP3 Variable Gain with Adjustable Bias 3x3mm, QFN 100% RF, DC and Output Power Testing General Description
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B1014-QT
22-Jan-10
XB1014-QT
VD-12
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B1008-QT
Abstract: XB1008-QT XB1008-QT-0G00 XB1008-QT-0G0T XB1008-QT-EV1
Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT March 2010 - Rev 13-Mar-10 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias
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B1008-QT
13-Mar-10
XB1008-QT
B1008-QT
XB1008-QT-0G00
XB1008-QT-0G0T
XB1008-QT-EV1
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Untitled
Abstract: No abstract text available
Text: 10.0-21.0 GHz GaAs MMIC Buffer Amplifier, QFN B1008-QT November 2009 - Rev 07-Nov-09 Features Excellent Transmit LO/Output Buffer Stage 3x3mm, QFN 17.0 dB Small Signal Gain +20.0 dBm Psat +32 dBm Output IP3 4.5 dB Noise Figure Variable Gain with Adjustable Bias
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B1008-QT
07-Nov-09
XB1008-QT
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CHA3664-QAG
Abstract: CHA3664 fop 630 8 pin SMD s12
Text: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power p-HEMT process: 0.25µm gate length, via holes
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CHA3664-QAG
5-21GHz
CHA3664-QAG
5-21GHz
16L-QFN3x3
120mA
DSCHA3664-QAG7333
CHA3664
fop 630
8 pin SMD s12
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fop 630
Abstract: CHA3664 CHA3664-QAG smd 1513 sas 560
Text: CHA3664-QAG RoHS COMPLIANT 5-21GHz Driver Amplifier GaAs Monolithic Microwave IC in SMD leadless package Description The CHA3664-QAG is a two-stage self-biased general purpose monolithic medium power amplifier. The circuit is manufactured with a power pHEMT process: 0.25µm gate length, via holes
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CHA3664-QAG
5-21GHz
CHA3664-QAG
5-21GHz
16L-QFN3x3
120mA
DSCHA3664-QAG7333
fop 630
CHA3664
smd 1513
sas 560
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