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    Untitled

    Abstract: No abstract text available
    Text: il Advanced Micro Devices A m 2 8 F 0 1 OA 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance ■ Embedded Erase Electrical Bulk Chip-Erase — 90 ns maximum access tim e


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    PDF 32-Pin Am28F010A

    Untitled

    Abstract: No abstract text available
    Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ ■ CMOS Low power consumption Flasherase Electrical Bulk Chip-Erase


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    PDF Am28F256 32-Pin 0257S2Ã

    28F010

    Abstract: AM28F010 AMD 478 socket pinout
    Text: AD V MICRO MEMORY 4ÖE » G2S7S5Û Preliminary 0030715 T •AMD4 a T—46—13—27 Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS ■ ■ ■ High performance - 90 ns maximum access time Low power consumption


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    PDF G030715 T-46-13-27 Am28F010 -32-Pin 32-Pin 100mA Am28F010-95C4JC Am28F010-95C3JC 28F010 AMD 478 socket pinout

    am29f010

    Abstract: No abstract text available
    Text: a Am29F010 Advanced Micro Devices 1 Megabit 131,072 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase — Minimizes system level power consumption ■ Compatible with JEDEC-standard commands


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    PDF Am29F010 32-pin Am29F040 02S7S2A

    Untitled

    Abstract: No abstract text available
    Text: a Am27X512 512 Kilobit 65,536 x 8-Bit CMOS ExpressROM Device Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • As an OTP EPROM alternative: ■ High noise immunity ■ Low power dissipation — Factory optimized programming — Fully tested and guaranteed


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    PDF Am27X512 Am33C93A

    27X128

    Abstract: No abstract text available
    Text: a Advanced Micro Devices Am27X128 128 Kilobit 16,384 x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ■ As an O TP EPROM alternative: ■ ±10% pow er supply tolerance — Factory optim ized programming ■ High noise im m unity — Fully tested and guaranteed


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    PDF Am27X128 27X128 KS000010 27X128

    AM2BF010

    Abstract: 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200
    Text: FINAL a A m 2 8 F 0 1 0 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V — 90 ns maximum access time ■ CMOS Low power consumption


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    PDF Am28F010 32-Pin AM2BF010 28F010 TRANSISTOR TZ am28f010-150 P5752 11559F-12 11559F-2 am28f010-200

    AM27C128

    Abstract: zi11
    Text: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current


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    PDF 003G327 T-46-13â Am27C128 tlme-55 128K-bit, T-46-13-29 1420-009A zi11

    29F080

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y Am29F080 8 Megabit 1,048,576 x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 Volt ± 10% for read and write operations ■ — Minimizes system level power requirements


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    PDF Am29F080 44-pin 02S752Ã a0337bl 29F080

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO -CMEflORY> flö 0257528 ADV M IC R O DE~| [ ] 2 5 ? S2 0 M E M O R Y 88D 8 -BET 24806 DD^MÖOb S J " D T -¥ £ -f3 -Z 5 (A m 2 7 6 4 A , A m 2 7 1 2 8 A , A m 2 7 2 5 6 ) 03 I CO DISTINCTIVE CHARACTERISTICS • • • Fast a ccess tim es — as low as 200 ns


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    PDF 7128A, 06842C

    Am26F010

    Abstract: am26f AM28F010
    Text: a Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 90 ns maximum access time ■ CMOS Lo w p o w e r c o n s u m p tio n ■ ■ — No data retention power consumption


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    PDF Am28F010 32-Pin 0257S2Ã D033TÃ Am26F010 am26f

    programming AM29F400

    Abstract: TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB
    Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% read, write, and erase ■ ■ — Minimizes system level power requirements


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    PDF Am29F400T/Am29F400B 8-Bit/262 16-Bit) 44-pin 48-pin D257S2Ã 003S5bb programming AM29F400 TSOP 48 Package am29f400 AM29F400T AM29F400 Am29f400 equivalent AM29 FLASH OES752 29f400b AM29F400TB

    amd socket 940 pinout

    Abstract: SSC 9500 KSS 8006 AM27C020 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"
    Text: FINAL H Advanced Micro Devices Am27C020 2 Megabit 262,144 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 70 ns ■ Low power consumption — Typical programming time of 32 seconds ■ Latch-up protected to 100 mA from -1 V to


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    PDF Am27C020 28-pin 32-pin 8M-7/94-0 11507E amd socket 940 pinout SSC 9500 KSS 8006 electra 171 AMD 27C020 BXA 4250 27C020 "electronica"

    OA79

    Abstract: AMD am2 socket pinout amd AM2 pinout amd socket 940 pinout AMD socket AM2 pinout BXA 4250 5607 AM27C040 h4t diode smd pinout AM2 AMD
    Text: FINAL il Am27C040 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — 90 ns — Typical programming time of 1 minute ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to


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    PDF Am27C040 28-pin 32-pin Am27C040ign 8M-7/94-0 14971D 0257S2Ã 32S73 OA79 AMD am2 socket pinout amd AM2 pinout amd socket 940 pinout AMD socket AM2 pinout BXA 4250 5607 h4t diode smd pinout AM2 AMD

    Am2BF010A

    Abstract: to525 Transistor 2SC 2166
    Text: Zi A m 2 8 F 0 1 0 A 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High perform ance ■ — 90 ns m aximum access time ■ CMOS low power consum ption ■


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    PDF Am28F010A 32-Pin 0D327b5 Am2BF010A to525 Transistor 2SC 2166

    am27c64 rev d

    Abstract: No abstract text available
    Text: Advanced Micro Devices Am27C64 64 Kilobit 8,192 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Latch-up protected to 100 mA from -1 V to Vcc + 1 V ■ Fast access time — 45 ns ■ High noise immunity ■ Low power consumption ■ Versatile features for simple interfacing


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    PDF Am27C64 28-pin 32-pin KS000010 05S7SSÃ 11419D-9 am27c64 rev d

    Untitled

    Abstract: No abstract text available
    Text: Am28F256 256 Kilobit 32,768 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance Latch-up protected to 100 mA from -1 V to Vcc +1 V — 70 ns maximum access time Flasherase Electrical Bulk Chip-Erase


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    PDF Am28F256 32-pin Am28F256-75 025752fl DD32b01

    programming 29F400

    Abstract: COVIC
    Text: P R E L IM IN A R Y Am29F400T/Am29F400B 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ 5.0 V ± 10% read, w rite, and erase — Minimizes system level power requirements


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    PDF Am29F400T/Am29F400B 8-Bit/262 16-Bit) 29F400T/Am29F400B 0257S2Ã 0D325bb programming 29F400 COVIC

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY AM D£t Am29LV800T/Am29LV800B 8 Megabit 1,048,576 x 8-Bit/524,288 x 16-Bit CMOS 3.0 Volt-only, Sectored Flash Memory DISTINCTIVE CHARACTERISTICS • Extended voltage range 2.7 to 3.6 V for read and write operations — Minimizes system level power requirements


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    PDF Am29LV800T/Am29LV800B 8-Bit/524 16-Bit) 44-pin 48-pin 16-038-S044-2 752ft 003355b

    AMD a 462 socket pinout

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption


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    PDF 02s7saa Am28F512 32-pin T-90-10 AMD a 462 socket pinout

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO {MEMORY} 'it I Am99C164/Am99C165 1 1 6 ,3 8 4 x 4 S ta tic R /W R A M D2S7S2Û OOEbflMM 1 | D ’ DATA SHEET AMENDMENT Increased Standby Current TTL input levels for all speed grades of the Am99C164 and Am99C165, commercial temperature grade. *


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    PDF Am99C164/Am99C165 Am99C164 Am99C165 Am99CL164 Am99CL165 T-46-23 Am99C16 /Am99CL164 /Am99CL165

    PEB 2261

    Abstract: 0034D A03407
    Text: Am28F020A 2 Megabit 262,144 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance ■ — 90 ns m axim um acce ss tim e ■ CMOS Low power consumption ■ — 3 0 m A m axim um a ctive current


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    PDF Am28F020A 32-Pin -32-pin PEB 2261 0034D A03407

    Untitled

    Abstract: No abstract text available
    Text: & Am28F010 1 Megabit 131,072 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ — 90 ns maximum access time ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase


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    PDF Am28F010 32-pin 257S2Ã

    Untitled

    Abstract: No abstract text available
    Text: a FINAL Am27C400 Advanced Micro Devices 4 Megabit 524,288 x 8-Bit/262,144 x 16-Bit ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply ■ ±10% power supply tolerance standard on most speeds — 100 ns


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    PDF Am27C400 8-Bit/262 16-Bit) 44-pin 42-pin Am33C93A