medical sensor
Abstract: HL7002MG
Text: HL7001MG/02MG ODE-208-076B Z Rev.2 Feb. 19, 2008 InGaAsP Laser Diode Description The HL7001MG/02MG are 0.7 µm band InGaAsP laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for medical sensor applications and various other types of optical equipment.
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HL7001MG/02MG
ODE-208-076B
HL7001MG/02MG
705nm
HL7001MG
HL7001MG/02MG:
HL7002MG
medical sensor
HL7002MG
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL7301MG/02MG InGaAsP Laser Diode 730nm/50mW Features: Outline • Optical output power: 40mW CW Infrared light output: 730nm Typ.（Po=40ｍW) Single transverse mode Low operation current : 75mA Typ (Po=40mW) TE mode oscillation
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HL7301MG/02MG
730nm/50mW
730nm
HL7301MG/02MG
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Untitled
Abstract: No abstract text available
Text: HL7501MG/02MG ODE2003-00 P Preliminary Rev.0 Jun. 23, 2008 InGaAsP Laser Diode Description The HL7501MG/02MG are 0.75 m band InGaAsP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for medical sensor applications and various other types of optical equipment.
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HL7501MG/02MG
ODE2003-00
HL7501MG/02MG
755nm
HL7501MG/02MG:
HL7501MG
HL7502MG
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL7001MG/02MG InGaAsP Laser Diode 705nm/50mW Features: Outline • Optical output power: 40mW CW Infrared light output: 705nm Typ.(Po=40mW) Single transverse mode Low operation current : 75mA Typ (Po=40mW) TE mode oscillation
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HL7001MG/02MG
705nm/50mW
705nm
HL7001MG/02MG
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HL7001MG
Abstract: HL7002MG
Text: HL7001MG/02MG ODE2005-00 M Rev.0 Jun. 23, 2008 InGaAsP Laser Diode Description The HL7001MG/02MG are 0.7 m band InGaAsP laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for medical sensor applications and various other types of optical equipment.
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Original
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HL7001MG/02MG
HL7001MG/02MG
ODE2005-00
705nm
HL7001MG/02MG:
HL7001MG
HL7002MG
HL7001MG
HL7002MG
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Untitled
Abstract: No abstract text available
Text: HL7301MG/02MG ODE2004-00 P Preliminary Rev.0 Jun. 23, 2008 InGaAsP Laser Diode Description The HL7301MG/02MG are 0.73 m band InGaAsP laser diode with a multi-quantum well (MQW) structure. It is suitable as a light source for medical sensor applications and various other types of optical equipment.
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HL7301MG/02MG
ODE2004-00
HL7301MG/02MG
730nm
HL7301MG/02MG:
HL7301MG
HL7302MG
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medical sensor
Abstract: ODE2004-00 HL7302MG
Text: HL7301MG/02MG InGaAsP Laser Diode ODE2004-00 P Preliminary Rev.0 Jun. 23, 2008 Description The HL7301MG/02MG are 0.73 µm band InGaAsP laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for medical sensor applications and various other types of optical equipment.
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Original
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HL7301MG/02MG
ODE2004-00
HL7301MG/02MG
730nm
HL7301MG
HL7301MG/02MG:
HL7302MG
medical sensor
ODE2004-00
HL7302MG
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HL7301MG
Abstract: HL7302MG
Text: HL7301MG/02MG ODE2004-01 M Rev.1 Jan. 13, 2009 InGaAsP Laser Diode Description The HL7301MG/02MG are 0.73 m band InGaAsP laser diode with a multi-quantum well(MQW) structure. It is suitable as a light source for medical sensor applications and various other types of optical equipment.
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HL7301MG/02MG
HL7301MG/02MG
ODE2004-01
730nm
HL7301MG/02MG:
HL7301MG
HL7302MG
HL7301MG
HL7302MG
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DF005M-G
Abstract: No abstract text available
Text: Single-Phase Bridge Rectifiers COMCHIP www.comchiptech.com DF005M-G thru DF10M-G Reverse Voltage: 50 to 1000V Forward Current: 1.0A DF-M Features - Plastic package used has Underwriters Laboratory Flammability Classification 94V-0 - Glass passivated chip junction
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DF005M-G
DF10M-G
MILSTD-750,
50mVp-p
MDS0312008A
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Untitled
Abstract: No abstract text available
Text: D ES IG N E D FOR U5E W IT H D E S C R IP T IO N R G -316/U CABLE EN TRY D IA M ET ER APPROVED CMH R E V IS E D 01 11/ZÎ/99 M IN IMUM FERRU LE ,1 2 5 SLEEVE . 066 D IELEC T R \C . 02 1 CO NTACT “DCiy-.11/ 22/S 9 0 19 SO FERR U LE REF H EX PLANE 7.6 EL EC T R IC A L
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OCR Scan
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-316/U
MtL-STD-202.
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