S2000AF
Abstract: ISOWATT218FX S2000AF equivalent JESD97
Text: S2000AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement
|
Original
|
S2000AF
2002/93/EC
ISOWATT218FX
S2000AF
ISOWATT218FX
S2000AF equivalent
JESD97
|
PDF
|
JESD97
Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Text: STRH40N25FSY1 STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY1 250 V STRH40N25FSY3 250 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge
|
Original
|
STRH40N25FSY1
STRH40N25FSY3
O-254AA
34Mev/cm
JESD97
RH40N25FSY1
RH40N25FSY3
STRH40N25FSY1
STRH40N25FSY3
|
PDF
|
TAG 8510
Abstract: VC5602V036 hfc 8081 be
Text: VC5602 VC6602 1.23 Megapixel digital video CMOS image sensor Features Description • SXVGA resolution 1280 x 960 ■ 1/3 inch format lens compatible ■ 3v3 I/O and 1V8 core digital supplies ■ 3v3 video and audio supplies ■ On board 10-bit ADC ■ On board audio pre-amplifier
|
Original
|
VC5602
VC6602
VC5602/VC6602
10-bit
TAG 8510
VC5602V036
hfc 8081 be
|
PDF
|
STCN75
Abstract: DS75 LM75 TCN75
Text: STCN75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C accuracy from –25°C to +100°C (max) ■ Low operating current:125 µA (typ) ■ No external components required
|
Original
|
STCN75
TCN75
STCN75
DS75
LM75
TCN75
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2STD2360 2STF2360 - 2STN2360 Low voltage fast-switching PNP power transistors Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ 4 4 Fast-switching speed 1 Emergency lighting ■ LED ■ Voltage regulation ■
|
Original
|
2STD2360
2STF2360
2STN2360
OT-89
OT-223
O-252
2STD1360T4,
2STF136y
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STP200N4F3 STB200N4F3 N-channel 40 V, 0.0025 Ω, 120 A, D2PAK, TO-220 planar STripFET Power MOSFET Features Type VDSS RDS on max ID Pw STB200N4F3 40 V <0.0031 Ω 120 A 300 W STP200N4F3 40 V <0.0035 Ω 120 A 300 W ) s ( ct du 3 1 • 100 % avalanche tested
|
Original
|
STP200N4F3
STB200N4F3
O-220
|
PDF
|
21 inch CRT TV
Abstract: BU508AW JESD97
Text: BU508AW High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement
|
Original
|
BU508AW
O-247
O-247
BU508AW
21 inch CRT TV
JESD97
|
PDF
|
Untitled
Abstract: No abstract text available
Text: STCN75 Digital temperature sensor and thermal watchdog Preliminary Data Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C accuracy from –25°C to +100°C (max) ■ Low operating current:125µA (typ) ■ No external components required
|
Original
|
STCN75
150ms
TCN75
|
PDF
|
M58LT128HSB
Abstract: CR10 M58LT128HST
Text: M58LT128HST M58LT128HSB 128 Mbit 8 Mb x16, multiple bank, multilevel interface, burst 1.8 V supply, secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for Program, Erase and Read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
|
Original
|
M58LT128HST
M58LT128HSB
TBGA64
M58LT128HSB
CR10
M58LT128HST
|
PDF
|
CR10
Abstract: M58LT128HSB M58LT128HST
Text: M58LT128HST M58LT128HSB 128-Mbit 8 Mb x16, Multiple Bank, Multilevel interface, Burst 1.8 V supply, Secure Flash memories Features • ■ Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 2.7 V to 3.6 V for I/O buffers – VPP = 9 V for fast program
|
Original
|
M58LT128HST
M58LT128HSB
128-Mbit
TBGA64
CR10
M58LT128HSB
M58LT128HST
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BU508AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement
|
Original
|
BU508AF
2002/93/EC
ISOWATT218FX
BU508AF
|
PDF
|
Untitled
Abstract: No abstract text available
Text: BU508AF High voltage NPN power transistor for standard definition CRT display Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement
|
Original
|
BU508AF
ISOWATT218FX
BU508AF
|
PDF
|
AN2152
Abstract: TS4985 TS4985EIJT
Text: AN2152 Application note TS4985 2 x1.2 W stereo audio power amplifier evaluation board user guidelines Introduction This application note concerns the evaluation board DEMOTS4985, specifically designed to help you evaluate the TS4985EIJT stereo audio amplifier.
|
Original
|
AN2152
TS4985
DEMOTS4985,
TS4985EIJT
TS4985
AN2152
|
PDF
|
STB200N4F3
Abstract: STP200N4F3 200N4F3
Text: STP200N4F3 STB200N4F3 N-channel 40 V, 0.0025 Ω, 120 A, D2PAK, TO-220 planar STripFET Power MOSFET Features Type VDSS RDS on max ID Pw STB200N4F3 40 V <0.0031 Ω 120 A 300 W STP200N4F3 40 V <0.0035 Ω 120 A 300 W 3 3 1 • 100 % avalanche tested ■
|
Original
|
STP200N4F3
STB200N4F3
O-220
STB200N4F3
STP200N4F3
200N4F3
|
PDF
|
|
VC5602
Abstract: 5.1 audio amplifier 134E6 VC6602 S8612 ZTX749 VC5602V036 VC602
Text: VC5602 VC6602 1.23 Megapixel digital video CMOS image sensor Features Description • SXVGA resolution 1280 x 960 ■ 1/3 inch format lens compatible ■ 3v3 I/O and 1V8 core digital supplies ■ 3v3 video and audio supplies ■ On board 10-bit ADC ■ On board audio pre-amplifier
|
Original
|
VC5602
VC6602
10-bit
VC5602/VC6602
VC5602
5.1 audio amplifier
134E6
VC6602
S8612
ZTX749
VC5602V036
VC602
|
PDF
|
zero crossing detector inverter
Abstract: Ametek bldc Transistor hall w12 AN2502 zero crossing ametek 24v Ametek dc motor Ametek 24v motor trace code st Ametek 24v dc blower
Text: AN2502 Application note Enhanced sensorless startup control of BLDC motors using ST7FMC Introduction The ST7FMC microcontroller is capable of controlling 3 phase brushless DC BLDC motors in position sensorless mode because of its powerful motor control macro cell. It is capable of
|
Original
|
AN2502
zero crossing detector inverter
Ametek bldc
Transistor hall w12
AN2502
zero crossing
ametek 24v
Ametek dc motor
Ametek 24v motor
trace code st
Ametek 24v dc blower
|
PDF
|
p60nf06
Abstract: P60NF P60NF06 TO-220 p60nf0 P60NF*06 *p60nf06 P60*nf06 p60n STP60NF061 STP60NF06
Text: STP60NF06 N-channel 60V - 0.014Ω - 60A TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID STP60NF06 60V <0.016Ω 60A • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization 3 1 2 TO-220
|
Original
|
STP60NF06
O-220
p60nf06
P60NF
P60NF06 TO-220
p60nf0
P60NF*06
*p60nf06
P60*nf06
p60n
STP60NF061
STP60NF06
|
PDF
|
mosfet 40a 200v
Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Text: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge ■ Light weight
|
Original
|
STRH40N25FSY3
O-254AA
100kRad
34Mev/cm
mosfet 40a 200v
RH40N25FSY1
RH40N25FSY3
STRH40N25FSY1
STRH40N25FSY3
|
PDF
|
2std2360
Abstract: 2STF1360 2STF2360 2STN1360 2STN2360 N2360 2STD2360T4 D2360
Text: 2STD2360 2STF2360 - 2STN2360 Low voltage fast-switching PNP power transistors Features • Very low collector-emitter saturation voltage ■ High current gain characteristic ■ 4 4 Fast-switching speed 1 Emergency lighting ■ LED ■ Voltage regulation ■
|
Original
|
2STD2360
2STF2360
2STN2360
OT-89
OT-223
O-252
2STD1360T4,
2STF1360
2std2360
2STN1360
2STN2360
N2360
2STD2360T4
D2360
|
PDF
|
STRH40N25FSY3
Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1
Text: STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA Features Type VDSS STRH40N25FSY3 250V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge
|
Original
|
STRH40N25FSY3
O-254AA
100kRad
34Mev/cm
STRH40N25FSY3
RH40N25FSY1
RH40N25FSY3
STRH40N25FSY1
|
PDF
|
p140nf
Abstract: No abstract text available
Text: STB140NF55 - STB140NF55-1 STP140NF55 N-channel 55V - 0.0065Ω - 80A - D2PAK - I2PAK - TO-220 STripFET II Power MOSFET General features Type VDSS RDS on ID (1) STB140NF55 55V <0.008Ω 80A STB140NF55-1 55V <0.008Ω 80A STP140NF55 55V <0.008Ω 80A 1. Current limited by package
|
Original
|
STB140NF55
STB140NF55-1
STP140NF55
O-220
STB140NF55
p140nf
|
PDF
|
AN2153
Abstract: TS4984 TS4984FC
Text: AN2153 Application note TS4984 low voltage audio power stereo amplifier evaluation board user guidelines Introduction This application note concerns the evaluation board DEMOTS4984FC, designed to help you evaluate the TS4984 low-power stereo audio amplifier.
|
Original
|
AN2153
TS4984
DEMOTS4984FC,
TS4984
AN2153
TS4984FC
|
PDF
|
02MAR2007
Abstract: No abstract text available
Text: R E V I S I ONS LTR DE SC R P T I O N DATE REV PER E C - O S I 1- 0 2 0 1 - 0 4 REV RER E C O - 0 7 - 0 0 4 5 8 3 DWN 23JUN2005 LV 02MAR2007 RG APVD ;p JW NG: PCT P O L Y E S T E R , BLACK, UL 9 4 V - 0 . R RERL OW P R O C E S S C O M P A T I B L E , TERMINALS:
|
OCR Scan
|
23JUN2005
02MAR2007
163APPLICATION
MAR200Ü
02MAR2007
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 2 THIS D R A WI N G IS UNPUBLISHED. C O P Y RI G HT 20 BY RELEASED TYCO ELECTRONICS CORPORATION. ALL F OR PUBLICATION R|3 H T S LOC REV ISIONS D I ST AA RESERVED. 22 LTR DE S C R I P T I O N DWN DATE APVD REV PER EC OS I I - 02 0 I - 0 4 23JUN2005 LV SF REV PER E C O - 0 7 - 0 0 4 5 8 3
|
OCR Scan
|
23JUN2005
02MAR2007
|
PDF
|