GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: VISHAY IE7, H-Lens, TO-18 Vishay Semiconductors IE7, H-Lens, TO-18 Package Dimensions in mm 14486 Document Number 83963 Rev. 1.1, 02-Jun-04 www.vishay.com 1 IE7, H-Lens, TO-18 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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02-Jun-04
D-74025
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Untitled
Abstract: No abstract text available
Text: VISHAY IE51, 1.9 mm, Gull Wing CA Vishay Semiconductors IE51, 1.9 mm, Gull Wing (CA) Package Dimensions in mm 16160 Document Number 83960 Rev. 1.1, 02-Jun-04 www.vishay.com 1 IE51, 1.9 mm, Gull Wing (CA) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement
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02-Jun-04
D-74025
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Untitled
Abstract: No abstract text available
Text: PD73, TO-18 VISHAY Vishay Semiconductors PD73, TO-18 Package Dimensions in mm 14487 Document Number 81104 Rev. 1.2, 02-Jun-04 www.vishay.com 1 PD73, TO-18 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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02-Jun-04
D-74025
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Untitled
Abstract: No abstract text available
Text: TFDU4203 Vishay Semiconductors Integrated Low Profile Transceiver Module for Telecom Applications - IrDA Standard The miniaturized TFDU4203 is an ideal transceiver for applications in telecommunications like mobile phones and pagers. The device is mechanically
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TFDU4203
TFDU4203
D-74025
02-Jun-04
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BAS520-02V-GS18
Abstract: BAS520-02V
Text: BAS520-02V VISHAY Vishay Semiconductors Small Signal Schottky Diode Features • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges.
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BAS520-02V
OD-523
BAS520-02V
BAS520-02V-GS18
BAS520-02V-GS08
D-74025
02-Jun-04
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MIL-PRF-914
Abstract: marking ABs 10k resistors
Text: Model MP Series Precision Thin Film MP Resistor Divider Network SC70 package FEATURES • Small size (SC70 package) • Tight resistance ratio tolerances (± 0.05%) • Low TC tracking (± 2 ppm) • Excellent long-term stability (500 ppm at 70 °C for 2000 hours)
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500ppm
02-Jun-04
MIL-PRF-914
marking ABs
10k resistors
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BPW77NB
Abstract: No abstract text available
Text: BPW77N VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW77N is a very high sensitive silicon NPN epitaxial planar phototransistor in a standard TO-18 hermetically sealed metal case. Its glass lens featuring a viewing angle of ±10 °
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BPW77N
BPW77N
D-74025
02-Jun-04
BPW77NB
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Untitled
Abstract: No abstract text available
Text: BPW96 VISHAY Vishay Semiconductors Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T-1¾ ∅ 5 mm package. Due to its waterclear epoxy the device is sensitive to visible and near
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BPW96
BPW96
D-74025
02-Jun-04
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MBRF20H200CT
Abstract: MBR20H200CT MBRB20H200CT-1 MBR 0531
Text: MBR20H200CT, MBRF20H200CT & MBRB20H200CT-1 Series Vishay Semiconductors New Product formerly General Semiconductor Dual High-Voltage Schottky Rectifiers Reverse Voltage 200V Forward Current 20A Max. Junction Temperature 175°C Features TO-220AB MBR20H200CT
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MBR20H200CT,
MBRF20H200CT
MBRB20H200CT-1
O-220AB
MBR20H200CT)
02-Jun-04
MBRF20H200CT
MBR20H200CT
MBR 0531
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Untitled
Abstract: No abstract text available
Text: VISHAY IE51, 1.9 mm, Rev. Gull Wing CA Vishay Semiconductors IE51, 1.9 mm, Rev. Gull Wing (CA) Package Dimensions in mm 16159 Document Number 83959 Rev. 1.1, 02-Jun-04 www.vishay.com 1 IE51, 1.9 mm, Rev. Gull Wing (CA) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement
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02-Jun-04
D-74025
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83961
Abstract: No abstract text available
Text: VISHAY IE51, 1.9 mm, Yoke CA Vishay Semiconductors IE51, 1.9 mm, Yoke (CA) Package Dimensions in mm 16228 Document Number 83961 Rev. 1.1, 02-Jun-04 www.vishay.com 1 IE51, 1.9 mm, Yoke (CA) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement
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02-Jun-04
D-74025
83961
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83962
Abstract: No abstract text available
Text: VISHAY IE51, 1.9 mm, Axial CA Vishay Semiconductors IE51, 1.9 mm, Axial (CA) Package Dimensions in mm 16760 Document Number 83962 Rev. 1.1, 02-Jun-04 www.vishay.com 1 IE51, 1.9 mm, Axial (CA) VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement
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02-Jun-04
D-74025
83962
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Untitled
Abstract: No abstract text available
Text: IE7, Flat, TO-18 VISHAY Vishay Semiconductors IE7, Flat, TO-18 Package Dimensions in mm 14485 Document Number 83958 Rev. 1.1, 02-Jun-04 www.vishay.com 1 IE7, Flat, TO-18 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to
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02-Jun-04
D-74025
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Untitled
Abstract: No abstract text available
Text: SURFACE MOUNT NETWORKS SURFACE MOUNT MP Vishay Thin Film Surface Mount Network FEATURES • Small physical size SC70 format • Tight resistance ratio tolerances ± 0.05% MP 3 LEAD • Low TC tracking ± 2ppm • Excellent long term stability 500ppm at 70°C for
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500ppm
MP32002BW
25ppm/
02-Jun-04
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS 86 G LTR K D 1 DATE DWN APVD 02JUN04 JR MS DESCRIPTION REDRAWN PER 0 G 3 A - 0 4 0 0 - 0 4 D TONGUE MATERIAL THICKNESS ,045±.003
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02JUN04
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 86 LTR DESCRIPTION REDRAWN PER 0 G 3 A - 0 4 0 0 - 0 4 D 1 'S DWN DATE 02JUN04 APVD JR MS D TONGUE MATERIAL THICKNESS .040±.003
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02JUN04
B-152
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. DIST LOC ALL RIGHTS RESERVED. REVISIONS 86 G LTR M D 1 DATE DWN APVD 02JUN04 JR MS DESCRIPTION REDRAWN PER 0 G 3 A - 0 4 0 0 - 0 4 D TONGUE MATERIAL THICKNESS ,045±.003
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02JUN04
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 86 LTR DESCRIPTION REDRAWN PER 0 G 3 A - 0 4 0 0 - 0 4 D 1 DWN DATE 02JUN04 APVD JR MS D TONGUE MATERIAL THICKNESS ,048±.003
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02JUN04
B-152
Corporat152
31MAR2000
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322128
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 86 LTR DESCRIPTION L D 1 DWN DATE REDRAWN PER 0 G 3 A - 0 3 9 5 - 0 4 02JUN04 APVD JR MS D TONGUE MATERIAL THICKNESS ,040±.003
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02JUN04
B-152
31MAR2000
322128
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 86 LTR DESCRIPTION REDRAWN PER 0 G 3 A - 0 3 9 5 - 0 4 D 1 DWN DATE 02JUN04 APVD JR MS D TONGUE MATERIAL THICKNESS ,048±.003
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02JUN04
B-152
Corporat152
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST REVISIONS 86 G LTR K D 1 DATE DWN APVD 02JUN04 JR MS DESCRIPTION REDRAWN PER 0 G 3 A - 0 4 0 0 - 0 4 D TONGUE MATERIAL THICKNESS ,048±.003
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02JUN04
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST REVISIONS 86 LTR N D 1 DESCRIPTION DWN DATE REDRAWN PER 0 G 3 A - 0 4 0 0 - 0 4 02JUN04 APVD JR MS D TONGUE MATERIAL THICKNESS ,040±.003
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02JUN04
B-152
31MAR2000
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. G DIST 86 REVISIONS LTR DATE DWN APVD 02JUN04 JR MS DESCRIPTION REDRAWN PER 0 G 3 A - 0 3 9 5 - 0 4 D D ’A” + . 0 0 5 .56 5 MIN DIA
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0G3A-0395-04
02JUN04
B-152,
B-545
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