M48T37V
Abstract: M48T37Y M4T28-BR12SH M4T32-BR12SH SOH44
Text: M48T37Y M48T37V 5.0 or 3.3 V, 256 Kbit 32 Kbit x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration ■ Automatic power-fail chip deselect and WRITE
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M48T37Y
M48T37V
M48T37Y:
M48T37V:
44-lead
M48T37V
M48T37Y
M4T28-BR12SH
M4T32-BR12SH
SOH44
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AN3192
Abstract: LSM303 lsm303dlh LSM303D AN3192 Application note AN3192 ST LSM303DL LGA28 accelerometer compass gyro 3axis MEMS magnetometer
Text: AN3192 Application note Using LSM303DLH for a tilt compensated electronic compass Introduction This application note describes the method for building a tilt compensated electronic compass using an LSM303DLH sensor module. The LSM303DLH is a 5 x 5 x 1 mm with LGA-28L package IC chip that includes a 3D digital
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AN3192
LSM303DLH
LGA-28L
AN3192
LSM303
LSM303D
AN3192 Application note
AN3192 ST
LSM303DL
LGA28
accelerometer compass gyro
3axis MEMS magnetometer
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a20 Schottky diode st
Abstract: M48Z2M1V M48Z2M1Y up 5135 Zeropower
Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
M48Z2M1V
a20 Schottky diode st
M48Z2M1Y
up 5135
Zeropower
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Untitled
Abstract: No abstract text available
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
PMDIP32
M48Z512A/Y/V
304-bny
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ST M48T02
Abstract: No abstract text available
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
ST M48T02
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Untitled
Abstract: No abstract text available
Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T58
M48T58Y
M48T58:
M48T58Y:
PCDIP28
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M68x
Abstract: No abstract text available
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
PMDIP32
M68x
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TEC 12715
Abstract: 8 pin JRC 2072 LQFP44 0047H 1832A JRC 2041 LQFP32 LQFP64 ST72561 ST72561-Auto
Text: ST72561xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI , active CAN Features • Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit
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ST72561xx-Auto
10-bit
TEC 12715
8 pin JRC 2072
LQFP44
0047H
1832A
JRC 2041
LQFP32
LQFP64
ST72561
ST72561-Auto
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STP6N120K3
Abstract: No abstract text available
Text: STFW6N120K3, STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 Ω typ., 6 A SuperMESH3 Power MOSFET in TO-3PF, TO-220 and TO-247 packages Datasheet — production data Features Order codes VDSS RDS on max ID Ptot STFW6N120K3 1200 V < 2.4 Ω 6A 63 W STP6N120K3
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STFW6N120K3,
STP6N120K3,
STW6N120K3
O-220
O-247
STFW6N120K3
STP6N120K3
O-220
O-247
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Untitled
Abstract: No abstract text available
Text: ST72361xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI Features • ■ ■ Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit
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ST72361xx-Auto
10-bit
LQFP32
LQFP44
10x10mm
LQFP64
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STP6N120K3
Abstract: STP6N120 to247 pcb footprint STW6N120K3 stp6n120k STFW6N120K3 6N120K3
Text: STFW6N120K3 STP6N120K3, STW6N120K3 N-channel 1200 V, 1.95 Ω, 6 A, TO-3PF, TO-220, TO-247 Zener-protected SuperMESH3TM Power MOSFET Features Type VDSS RDS on max ID Pw STFW6N120K3 1200 V < 2.4 Ω 6A 63 STP6N120K3 1200 V < 2.4 Ω 6A 150 W STW6N120K3 1200 V
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STFW6N120K3
STP6N120K3,
STW6N120K3
O-220,
O-247
STP6N120K3
O-220
STP6N120K3
STP6N120
to247 pcb footprint
STW6N120K3
stp6n120k
STFW6N120K3
6N120K3
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M48Z512A
Abstract: M48Z512AV M48Z512AY M48Z512BV
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
M48Z512AV
M48Z512BV)
M48Z512A/Y/V
M48Z512A
M48Z512AY
M48Z512BV
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M48T58
Abstract: M48T58Y SOH28
Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T58
M48T58Y
M48T58:
M48T58Y:
PCDIP28
M48T58
M48T58Y
SOH28
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e3 2410
Abstract: DS1642 M48T02 M48T12 14-MAY-2001
Text: M48T02 M48T12 5.0 V, 16 Kbit 2 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, and power-fail control circuit ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds
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M48T02
M48T12
M48T02:
M48T12:
PCDIP24
e3 2410
DS1642
M48T02
M48T12
14-MAY-2001
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Untitled
Abstract: No abstract text available
Text: STL52N25M5 N-channel 250 V, 0.064 Ω, 28 A, PowerFLAT 5x6 MDmesh™ V Power MOSFET Features Type VDSS RDS(on) max. ID(1) STL52N25M5 250 V < 0.076 Ω 28 A 1. This value is rated according Rthj-case. • Amongst the best RDS(on)* area ■ Very low profile package (1 mm max.)
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STL52N25M5
STL52N25M5
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DIODE smd marking CODE WA
Abstract: 67-BIT diode smd marking code A2
Text: ST7L34, ST7L35 ST7L38, ST7L39 8-bit MCU for automotive with single voltage Flash/ROM, data EEPROM, ADC, timers, SPI, LINSCI Features • ■ Memories – 8 Kbytes program memory: Single voltage extended Flash XFlash or ROM with readout protection capability. In-application
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ST7L34,
ST7L35
ST7L38,
ST7L39
DIODE smd marking CODE WA
67-BIT
diode smd marking code A2
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up 5135
Abstract: No abstract text available
Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
up 5135
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a20 Schottky diode st
Abstract: No abstract text available
Text: M48Z2M1Y M48Z2M1V 5 V or 3.3 V, 16 Mbit 2 Mb x 8 ZEROPOWER SRAM Not recommended for new design Features • Integrated, ultra low power SRAM, power-fail control circuit, and batteries ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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M48Z2M1Y
M48Z2M1V
M48Z2M1Y:
M48Z2M1V:
PLDIP36
a20 Schottky diode st
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3C MCC 12d
Abstract: INVERTER 10kW LQFP32 LQFP44 LQFP64 ST72561
Text: ST72561xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI , active CAN Features • Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit
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ST72561xx-Auto
10-bit
3C MCC 12d
INVERTER 10kW
LQFP32
LQFP44
LQFP64
ST72561
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TEC 12715
Abstract: No abstract text available
Text: ST72561xx-Auto 8-bit MCU for automotive with Flash or ROM, 10-bit ADC, 5 timers, SPI, LINSCI , active CAN Features • Memories – 16 K to 60 K High Density Flash HDFlash or ROM with read-out protection capability. In-application programming and in-circuit
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ST72561xx-Auto
10-bit
TEC 12715
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032-l
Abstract: 32 pin soic 450mil
Text: MoBL CY62128E 1-Mbit 128K x 8 Static RAM Features Functional Description The CY62128E[1] is a high performance CMOS static RAM organized as 128K words by 8 bits. This device features advanced circuit design to provide ultra low active current. This is ideal for providing More Battery Life (MoBL®) in portable
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CY62128E
CY62128E
CY62xxx)
R95LD-3R
SZ324
CY62128ELL-45ZXIT
CY62128ELL-45ZAXIT
CY62128ELL-45ZAXI
CY62128ELL-45ZXI
CY62128ELL-45SXI
032-l
32 pin soic 450mil
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ST7FL39
Abstract: trays STMICROELECTRONICS SO16 300 HBM 00-01H
Text: ST7L34 ST7L35 ST7L38 ST7L39 8-bit MCU for automotive with single voltage Flash/ROM, data EEPROM, ADC, timers, SPI, LINSCI Features • ■ Memories – 8 Kbytes program memory: Single voltage extended Flash XFlash or ROM with readout protection capability. In-application
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ST7L34
ST7L35
ST7L38
ST7L39
ST7FL39
trays STMICROELECTRONICS SO16 300
HBM 00-01H
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Untitled
Abstract: No abstract text available
Text: R E V I S IONS DESCRIPTION LTR REVISED DWN DATE E C R - 1 0 - 0 16 0 3 0 02AUG2010 APVD T.T T. .M A T E R I A L :G L A S S F I L E D T H E R M O P L A S T I C P L Y E S T E R ( 9 4 V - 0 ) , C O L O R :B L A C K 2 . THE SHAPE, SIZE AND P O S I T I O N
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02AUG2010
DI200D
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Untitled
Abstract: No abstract text available
Text: STL52N25M5 N-channel 250 V, 0.064 Q 28 A, PowerFLAT 5x6 MDmesh™ V Power MOSFET Features Type V DSS RDS(on) max. Id (1) STL52N25M5 250 V < 0.076 Q 28 A 1. This value is rated according Rthj.case. • A m ongst the best R ps^n )* area ■ V ery low profile package (1 mm max.)
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STL52N25M5
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