02MAR2007

Contextual Info: R E V I S I ONS LTR DE SC R P T I O N DATE REV PER E C - O S I 1- 0 2 0 1 - 0 4 REV RER E C O - 0 7 - 0 0 4 5 8 3 DWN 23JUN2005 LV 02MAR2007 RG APVD ;p JW NG: PCT P O L Y E S T E R , BLACK, UL 9 4 V - 0 . R RERL OW P R O C E S S C O M P A T I B L E , TERMINALS:

Contextual Info: T H IS D R A W ING IS U N P U B L IS H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION, FOR PUBLICATION ALL RIGHTS LOC REV IS IO N S D IS T RESERVED. D E S C R I P T IO N RELEASED REVISED E C O - 0 7 - 0 I 9 32 3 02MAR200 EZ 2 1AUG2007

Contextual Info: T H IS D R A W ING IS U N P U B L IS H E D . C O P Y R I G H T 20 RELEASED BY TYCO ELECTRONICS CORPORATION, FOR PUBLICATION ALL RIGHTS LOC REV IS IO N S D IS T RESERVED. D E S C R I P T IO N RELEASED EZ 02MAR200 SCREW O O 2 .5 MATER 3 2 E : PA 6-6 BRASS, K

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Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 6 5 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. D C 02.84+0.05 TYP [. 1 12 + . 0 0 2 ] B A AMP 4805 REV 31MAR2000 02MAR2006 1:08pm us049721 H:\dm—tec —mod\5 6508 64_1 —c.dwq

Contextual Info: 6 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 5 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. REVISIONS ALL RIGHTS RESERVED. A/ P LTR F MECHANICAL: .850 DESCRIPTION REV PER ECO — 09 —0 0 5 7 2 5 DATE DWN APVD 02MAR2009 VL LR MAX 1 00 5

Contextual Info: 5 TH IS D R AW IN G IS U N P U B LIS H E D . RELEASED FOR ALL C O PYR IG H T BY TYCO ELEC TR O N IC S -, P U B LIC A T IO N R IG H TS 4 2 3 - REVISIONS RESERVED. A/ C O R P O R A TIO N . D E S C R IP T IO N E MECHANICAL: .850 REV PER ECO — 02MAR2009 0 9 —0 0 5 7 2 5

Contextual Info: 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 5 6 4 3 2 RELEASED FOR PUBLICATION L0C ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. AA .850 DIST R E VIS IO N S 22 LTR DESCRIPTION A MAX MECHANICAL: REV PER EC 0S 13 - 0 6 4 4 - 0 4 DATE DWN APVD 0 2 M A R 2005

air variable capacitor

Abstract: LET9045C M243 365 pF variable capacitor
Contextual Info: LET9045C RF power transistor from the LdmoST family of n-channel enhancement-mode lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 45 W with 18.5 dB gain @ 960 MHz ■ BeO free package ■ In compliance with the 2002/95/EC european

S2000AF

Abstract: ISOWATT218FX S2000AF equivalent JESD97
Contextual Info: S2000AF High voltage NPN Power transistor for standard Definition CRT display Preliminary Data Features • State-of-the-art technology: – Diffused collector “Enhanced generation” ■ Stable performances versus operating temperature variation ■ Low base-drive requirement

spc56el60

Abstract: SPC56EL54 bosch edc 16, component protection SPC56EL LQFP100 tray MPC5643L Microcontroller Reference Manual MPC5643L pinout LQFP100 tray dimension SPC564l60 e200z4
Contextual Info: SPC56EL60x, SPC56EL54x SPC564L60x, SPC564L54x 32-bit Power Architecture microcontroller for automotive SIL3/ASILD chassis and safety applications Datasheet − production data Features • ■ ■ High-performance e200z4d dual core – 32-bit Power Architecture® technology CPU

stth3012d

Abstract: STTH3012W JESD97 STTH3012 k30a
Contextual Info: STTH3012 Ultrafast recovery - 1200 V diode Main product characteristics A IF AV 30 A VRRM 1200 V Tj 175° C VF (typ) 1.30 V trr (typ) 57 ns A K DO-247 STTH3012W Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses

STTH9012TV2

Abstract: JESD97 STTH9012TV1
Contextual Info: STTH9012TV Ultrafast recovery - 1200 V diode Main product characteristics IF AV 2 x 45 A VRRM 1200 V Tj 150° C VF (typ) 1.20 V trr (typ) 50 ns K2 A2 A2 K1 K1 A1 K2 A1 STTH9012TV2 STTH9012TV1 A1 Features and benefits • Ultrafast, soft recovery ■ Very low conduction and switching losses

STTH1210D

Abstract: STTH1210DI TO-220Ins st 393 STTH1210 STTH1210FP STTH1210G STTH1210G-TR diode stth1210d
Contextual Info: STTH1210 Ultrafast recovery - high voltage diode Main product characteristics IF AV 12 A VRRM 1000 V Tj 175° C VF (typ) 1.30 V trr (typ) 48 ns A A K TO-220AC STTH1210D Features and benefits • ■ ■ ■ ■ ■ Ultrafast, soft recovery Very low conduction and switching losses

STM8S103F3

Abstract: STM8S103F STM8S103K STM8S103FX STM8S103K3 IC 8038 function generator STM8S103 STM8S103F2 5252 F 4-pin so20w
Contextual Info: STM8S103K3 STM8S103F3 STM8S103F2 Access line, 16 MHz STM8S 8-bit MCU, up to 8 Kbytes Flash, data EEPROM,10-bit ADC, 3 timers, UART, SPI, I²C active, low consumption power-on • Permanently and power-down reset Interrupt management Nested interrupt controller with 32 interrupts

27NM60ND

Abstract: stb27nm60 STW27NM60ND 154-06
Contextual Info: STB27NM60ND STW27NM60ND N-channel 600 V, 0.13 Ω, 21 A FDmesh II Power MOSFET with fast diode in D2PAK, TO-247 Features Type VDSS @ TJMAX RDS(on) max ID STB27NM60ND STW27NM60ND 650 V 0.16 Ω 21 A 21 A TAB • The worldwide best RDS(on)*area amongst the

299LF

Abstract: M41T62 M41T62 LCC8 sm20s M41T63 M41T64 M41T65
Contextual Info: M41T62, M41T63 M41T64, M41T65 Serial real-time clocks with alarm Features • Serial RTC with alarm functions – 400 kHz I2C serial interface – Memory mapped registers for seconds, minutes, hours, day, date, month, year, and century – Tenths/hundredths of seconds register

JESD97

Abstract: RH40N25FSY1 RH40N25FSY3 STRH40N25FSY1 STRH40N25FSY3
Contextual Info: STRH40N25FSY1 STRH40N25FSY3 N-channel 250V - 0.084Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40N25FSY1 250 V STRH40N25FSY3 250 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardened ■ Low total gate charge

F8NK85Z

Abstract: P8NK85Z F8NK85 STP8NK85Z F8NK8 p8nk
Contextual Info: STP8NK85Z STF8NK85Z N-CHANNEL 850V -1.1Ω - 6.7A TO-220/TO-220FP Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE STP8NK85Z STF8NK85Z • ■ ■ ■ ■ ■ ■ VDSS RDS on ID Pw 850 V 850 V <1.4 Ω <1.4 Ω 6.7A 6.7A 150 W

GW30NC60W

Contextual Info: STGP30NC60W STGW30NC60W N-CHANNEL 30A - 600V - TO-247 - TO-220 Ultra FAST Switching PowerMESH IGBT General features • ■ Type VCES VCE sat Max @25°C IC @100°C STGW30NC60W STGP30NC60W 600V 600V < 2.5V < 2.5V 30A 30A 3 High frequency operation 1 Lower CRES / CIES ratio (no cross-conduction

TAG 8510

Abstract: VC5602V036 hfc 8081 be
Contextual Info: VC5602 VC6602 1.23 Megapixel digital video CMOS image sensor Features Description • SXVGA resolution 1280 x 960 ■ 1/3 inch format lens compatible ■ 3v3 I/O and 1V8 core digital supplies ■ 3v3 video and audio supplies ■ On board 10-bit ADC ■ On board audio pre-amplifier

STCN75

Abstract: DS75 LM75 TCN75
Contextual Info: STCN75 Digital temperature sensor and thermal watchdog Features • Measures temperatures from –55°C to +125°C –67°F to +257°F – ±2°C accuracy from –25°C to +100°C (max) ■ Low operating current:125 µA (typ) ■ No external components required

capacitor 68nf

Abstract: GRM31CR61E106KA12 L5980 L5985 STPS2L25U
Contextual Info: EVAL5980 0.7 A step-down switching regulator demonstration board based on the L5980 Data Brief Features • 0.7 A DC output current ■ 2.9 V to 18 V input voltage ■ Output voltage adjustable from 0.6 V to 16 V ■ 250 kHz switching frequency, programmable

AN2737

Abstract: STM8 AN2737 STM8 USB send EEPROM EXAMPLE STM8s cross compiler user guide stm8s aardvark i2c aardvark stm8 adapter Aardvark
Contextual Info: AN2737 Application note Basic in-application programming example using the STM8 I2C and SPI peripherals Introduction This application note is one of a set of application notes giving examples of how to use the various blocks of the STM8 microcontroller family and the STM8A and STM8S firmware