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    027S TRANSISTOR Search Results

    027S TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

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    Abstract: No abstract text available
    Text: /TLin^AB _ LT1103/Lm05 TECHNOLOGY o fflin e S w itc h in g R e g u la to r FCmUIKS D€SCRIPTIOn • ±1% Line and Load Regulation with No Opto-Coupler ■ Switch Frequency up to 200kHz ■ Internal 2A Switch and Current Sense LT1103 ■ Internal 1A Totem Pole Driver (LT1105)


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    PDF LT1103/Lm05 200kHz LT1103) LT1105) LT1103 LT1103/LT1105 100kHz D1D30Q