2SB766A
Abstract: RN5RF30A RN5RF50A
Text: LOW RIPPLE VOLTAGE REGULATOR WITH EXTERNAL TRANSISTOR NO. EA-043-0204 515 6 5,(6 OUTLINE 7KH 515) 6HULHV DUH &026EDVHG YROWDJH UHJXODWRU ,&V ZKLFK FRQWURO H[WHUQDO GULYHU WUDQVLVWRUV ZLWK KLJK ULS SOH UHMHFWLRQ KLJK DFFXUDF\ RXWSXW YROWDJH ORZ VXSSO\ FXUUHQW (DFK RI WKHVH YROWDJH UHJXODWRU ,&V FRQVLVWV RI D YROW
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EA-043-0204
026EDVHG
RN5RF30A
2SB766A
2SB766A
RN5RF30A
RN5RF50A
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2SA1441 datasheet
Abstract: 2SA1441 7803 voltage regulator voltage regulator sot-23-6 SOT-23-6 YJ
Text: 51B GRF Boost type Voltage Regulator with Reset 51 6(5,(6 NO. EA-092-0204 OUTLINE 7KH 51 6HULHV DUH &026EDVHG ERRVW W\SH YROWDJH UHJXODWRU ,&V ZLWK KLJK RXWSXW YROWDJH DFFXUDF\ ORZ VXS SO\ FXUUHQW DQG KLJK ULSSOH UHMHFWLRQ (DFK RI WKHVH YROWDJH UHJXODWRU FRQWUROOHUV FRQVLVWV RI D YROWDJH UHIHUHQFH XQLW
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EA-092-0204
026EDVHG
2SB703)
2SB940)
2SA1441 datasheet
2SA1441
7803 voltage regulator
voltage regulator sot-23-6
SOT-23-6 YJ
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BF440
Abstract: 40410 LM 784 OP d1g1
Text: 0&3 9 WR 9 0LFURSRZHU %L&026 2S $PSV $785(6 '(6&5,37,21 7KH 0&3 0&3 0&3 DQG 0&3 IURP 0LFURFKLS 7HFKQRORJ\ ,QF DUH XQLW\ JDLQ VWDEOH ORZ RIIVHW YROWDJH RSHUDWLRQDO DPSOLILHUV FDSDEOH RI SUHFL
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Untitled
Abstract: No abstract text available
Text: : &026:KLWH/ ''ULYHU ($785(6 v 3V^X\PLZJLU[NYV\UKJ\YYLU[ T([`WPJHS v +YP]LZ\W[V>OP[L3,+ZPUZLYPLZ v 7V^LYLMMPJPLUJ`V]LY v :O\[KV^UJ\YYLU[SLZZ[OHUM( v *VTWH[PISLWPUV\[^P[O3; v 3VHKMH\S[WYV[LJ[PVUHNHPUZ[VWLUJPYJ\P[Z
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HISL47WSH
/20PRODUCTCOULDCREATEA
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CM18-08BNP-TWO
Abstract: 08BN
Text: CM 18-PTFE Capacitive Capacitive Proximity Sensors DC Highlights • High EMC-immunity • Short-circuit protection pulsed • Shielded • PTFE housing with fine thread M18 x 1 mm, PVC cable • PNP or NPN output • Adjustable sensing range • Complementary output function
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18-PTFE
CM18-08BPP-TWO
CM18-08BNP-TWO
CM18-08BNP-TWO
08BN
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CM18-12NPP-KW1
Abstract: CM18-08BPP-KC1 CM18-12NPP-KC1 CM18-08BNP-KC1 CM18-08BPP-KW1 CM18-12NNP-KC1 CM18-08BNP-TWO CM18-12NNP-KW1 CM18-08BNP-KW1 bu 2580
Text: CM 18 Capacitive Capacitive Proximity Sensors DC Highlights • High EMC-immunity • Short-circuit protection pulsed • Shielded or unshielded • Plastic housing with fine thread M18 x 1 mm• Cable or connector • PNP or NPN output • Adjustable sensing range
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CM18-08BPP-TWO
CM18-08BNP-TWO
CM18-12NPP-KW1
CM18-08BPP-KC1
CM18-12NPP-KC1
CM18-08BNP-KC1
CM18-08BPP-KW1
CM18-12NNP-KC1
CM18-08BNP-TWO
CM18-12NNP-KW1
CM18-08BNP-KW1
bu 2580
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N2219
Abstract: 15-N2219 15-P3317 P3247 N3219 15-P2249 15-P2347
Text: KD01_MH15_en.qxd 18.07.2006 14:37 Uhr Seite 958 MH 15 Photoelectric switches Photoelectric proximity switches Photoelectric reflex switches Through-beam photoelectric switches MH 15: Short housing, clever mounting – for smart solutions • MHL 15 photoelectric reflex
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MHE 15-N3236
Abstract: 15-P3336 P3238 N2238 MHE Series P3336 MHL receiver p2238 15-N2236
Text: KD01_MH15_en.qxd 18.07.2006 14:37 Uhr Seite 958 MH 15 Photoelectric switches Photoelectric proximity switches Photoelectric reflex switches Through-beam photoelectric switches MH 15: Short housing, clever mounting – for smart solutions • MHL 15 photoelectric reflex
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15-N2238
15-N3238
15-N2338
15-N3338
15-P2238
15-P3238
15-P2338
15-P3338
MHE 15-N3236
15-P3336
P3238
N2238
MHE Series
P3336
MHL receiver
p2238
15-N2236
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mhl cable
Abstract: mhl 15-p2336 Sensick P P3236
Text: KD01_MH15_en.qxd 18.07.2006 14:37 Uhr Seite 958 MH 15 Photoelectric switches Photoelectric proximity switches Photoelectric reflex switches Through-beam photoelectric switches MH 15: Short housing, clever mounting – for smart solutions • MHL 15 photoelectric reflex
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scr C106B
Abstract: SCR C106D1 C106 Series scr C106D CHARACTERISTICS C106 c106m c106 scr SCR c106 c106d scr C106D
Text: C106 Series Preferred Device Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is
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C106B,
C-106
scr C106B
SCR C106D1
C106 Series
scr C106D CHARACTERISTICS
C106
c106m
c106 scr
SCR c106
c106d
scr C106D
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C106 thyristor
Abstract: C106D motorola thyristor c106d C106D C106 c106d pin out B52200F006 C106F motorola 305 C106A
Text: MOTOROLA Order this document by C106/D SEMICONDUCTOR TECHNICAL DATA C106 Series * Silicon Controlled Rectifier Reverse Blocking Triode Thyristors *Motorola preferred devices . . . Glassivated PNPN devices designed for high volume consumer applications such
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C106/D
C106/D*
C106 thyristor
C106D motorola
thyristor c106d
C106D
C106
c106d pin out
B52200F006
C106F
motorola 305
C106A
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scr c106mg
Abstract: C106DG C106MG SCR C106D equivalent circuit scr C106DG C106BG scr C106BG C106M1G SCR C106D equivalent SCR c106
Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is
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O-225AA
scr c106mg
C106DG
C106MG
SCR C106D equivalent circuit
scr C106DG
C106BG
scr C106BG
C106M1G
SCR C106D
equivalent SCR c106
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C106MG
Abstract: scr c106mg C106 MG SCR C106D equivalent circuit SCR C106m equivalent circuit C106D SCR equivalent equivalent SCR c106 C106D1G scr C106D CHARACTERISTICS c106d equivalent
Text: C106 Series Preferred Devices Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is
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C106B,
C-106
C106MG
scr c106mg
C106 MG
SCR C106D equivalent circuit
SCR C106m equivalent circuit
C106D SCR equivalent
equivalent SCR c106
C106D1G
scr C106D CHARACTERISTICS
c106d equivalent
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DOS-1204-G
Abstract: DOS-1204-W 4 pin yellow led VT12T 12T-2 12T-2N DOL-1204-G10M DOL-1204-G15M
Text: ranges in overview: • VS/VE 12 through-beam photoelectric switch: 5 m, ■ VL 12 photoelectric reflex switch: 2.8 m PL 80 A , switching reliability even with reflecting objects thanks to polarization filter and red LED transmitter. ■ VT 12 photoelectric proximity
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110th
DOS-1204-G
DOS-1204-W
4 pin yellow led
VT12T
12T-2
12T-2N
DOL-1204-G10M
DOL-1204-G15M
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c106d1 motorola
Abstract: C106 thyristor thyristor c106d C106 C106D motorola c106d thyristor C106D C106D1 thyristor C106d1 B52200F006
Text: MOTOROLA Order this document by C106/D SEMICONDUCTOR TECHNICAL DATA C106 Series Silicon Controlled Rectifier Reverse Blocking Triode Thyristors . . . Glassivated PNPN devices designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning
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C106/D
O-225AA)
c106d1 motorola
C106 thyristor
thyristor c106d
C106
C106D motorola
c106d thyristor
C106D
C106D1
thyristor C106d1
B52200F006
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ic 339
Abstract: ic 339 datasheet NTE90 NTE91
Text: NTE90 NPN & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier Absolute Maximum Ratings: (TA = +25°C) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
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NTE90
NTE91
ic 339
ic 339 datasheet
NTE90
NTE91
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NTE90
Abstract: NTE91
Text: NTE90 NPN & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
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NTE90
NTE91
50mAage
NTE90
NTE91
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nte2366
Abstract: ic 339 NTE399
Text: NTE2366 Silicon PNP Transistor High Voltage Video Amp Compl to NTE399 Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V
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NTE2366
NTE399)
100mA
nte2366
ic 339
NTE399
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Untitled
Abstract: No abstract text available
Text: NTE90 NPN & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V
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NTE90
NTE91
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NTE31
Abstract: NTE32
Text: NTE31 NPN & NTE32 (PNP) Silicon Complementary Transistors TV Sound Output, TV Vertical Output, AF Driver Output Features: D High Voltage: VCEO = 160V D High Continuous Collector Current Capability Applications: D Vertical Deflection Output & Sound Output Applications for Line Operated TV
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NTE31
NTE32
200mA
500mA,
NTE31
NTE32
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DMBTA56
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. R DMBTA56 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3
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DMBTA56
OT-23
-100mA,
-10mA
-10mA,
DMBTA56
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DMBTA55
Abstract: No abstract text available
Text: DC COMPONENTS CO., LTD. R DMBTA55 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for general purpose amplifier applications. SOT-23 Pinning .020 0.50 .012(0.30) 1 = Base 2 = Emitter 3 = Collector 3
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DMBTA55
OT-23
-100mA,
-10mA
-10mA,
DMBTA55
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Untitled
Abstract: No abstract text available
Text: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SA1576A Features • • • • PNP Plastic-Encapsulate Transistors Power dissipation: PCM = 0.2W Tamb=25℃ Collector current: ICM = -0.15A
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2SA1576A
OT-323
65Nominal
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Untitled
Abstract: No abstract text available
Text: ÆRLIGKT EVERLIGHT ELECTRONICS CO.,LTD. DATA SHEET PART NO. 264-10SD R D /S530-A 3 DATE 2001/7/15 DEPARTMENT CH R& D1 REVISION RECEIVED • MASS PRODUCTION □ PRELIMINARY □ CUSTOMER DESIGN DEVICE NUMBER : CDLE-026-255 PAGE : 4 CUSTOMER DESIGNER CHECKER
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264-10SDRD/S530-A3
CDLE-026-255
264-10SDRD/S530-A3
CDLE-026-255
30min
30min
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