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    024N06N Search Results

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    024N06N Price and Stock

    Rochester Electronics LLC IPP024N06N3GXKSA1

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey IPP024N06N3GXKSA1 Bulk 400 102
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    Infineon Technologies AG IPI024N06N3GHKSA1

    MOSFET N-CH 60V 120A TO262-3
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    DigiKey IPI024N06N3GHKSA1 Tube
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    Infineon Technologies AG IPP024N06N3GXKSA1

    MOSFET N-CH 60V 120A TO220-3
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    DigiKey IPP024N06N3GXKSA1 Tube 500
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    Avnet Americas IPP024N06N3GXKSA1 Tube 4 Weeks 123
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    Rochester Electronics IPP024N06N3GXKSA1 400 1
    • 1 $2.97
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    • 1000 $2.53
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    TME IPP024N06N3GXKSA1 42 1
    • 1 $5.53
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    Chip1Stop IPP024N06N3GXKSA1 12,250
    • 1 $4.56
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    IPP024N06N3GXKSA1 21
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    EBV Elektronik IPP024N06N3GXKSA1 21 Weeks 500
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    Infineon Technologies AG ISZ024N06NM6ATMA1

    TRENCH 40<-<100V
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    DigiKey ISZ024N06NM6ATMA1 Reel 5,000
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    Avnet Americas ISZ024N06NM6ATMA1 Reel 5,000
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    Infineon Technologies AG IPI024N06N3GXKSA1

    MOSFET N-CH 60V 120A TO262-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey IPI024N06N3GXKSA1 Tube 500
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    Mouser Electronics IPI024N06N3GXKSA1 470
    • 1 $3.13
    • 10 $2.63
    • 100 $1.58
    • 1000 $1.56
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    TME IPI024N06N3GXKSA1 1
    • 1 $2.31
    • 10 $1.59
    • 100 $1.38
    • 1000 $1.38
    • 10000 $1.38
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    024N06N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    024N06

    Abstract: ipd024n
    Text: Type 024N06N OptiMOSTM Power-Transistor Features Product Summary • Optimized for synchronous rectification VDS 60 V • 100% avalanche tested RDS on ,max 2.4 mW • Superior thermal resistance ID 90 A • N-channel, normal level 1) • Qualified according to JEDEC for target applications


    Original
    PDF IPD024N06N IEC61249-2-21 O-252-3 024N06N 50K/W 024N06 ipd024n

    024N06N

    Abstract: 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G
    Text: Type IPB021N06N3 G 024N06N3 G 024N06N3 G OptiMOS 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS on ,max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    PDF IPB021N06N3 IPI024N06N3 IPP024N06N3 IEC61249-2-21 PG-TO263-3 PG-TO262-3 PG-TO220-3 024N06N 021N06N PG-TO220-3 IEC61249-2-21 IPI024N06N3 G

    024N06N

    Abstract: 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G
    Text: IPB021N06N3 G Type 024N06N3 G 024N06N3 G OptiMOS TM 3 Power-Transistor Product Summary Features • Ideal for high frequency switching and sync. rec. • Optimized technology for DC/DC converters V DS 60 V R DS(on),max (SMD) 2.1 mΩ ID 120 A • Excellent gate charge x R DS(on) product (FOM)


    Original
    PDF IPB021N06N3 IPI024N06N3 IPP024N06N3 PG-TO263-3 PG-TO262-3 PG-TO220-3 021N06N 024N06N 021N06N JESD22 PG-TO220-3 IPP024N06N3 G 024N06 IPI024N06N3 G