2N1305 TEXAS INSTRUMENTS
Abstract: 2N1307 TEXAS INSTRUMENTS 030i TRANSISTOR 2G374 2N711 TEXAS INSTRUMENTS 2N1305 2n388 texas instruments 2N404 transistor 2N711B 2n711
Text: Germanium Transistors T ype C a se No. C o *" " 0 0 c <u o « o “ NPN 2N388 T05 A General 2N388A T05 A Purpose 2N1302 T05 A and Switching 2N1304 T05 A 2N1305 T05 A 2N1308 T05 A S P E C IA L C h a ra c te ris tic s M axim u m R a tin g s at 25°C amb. •¿z 0>
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2N388
2N388A
2N1302
2N1304
2N1306
2N1308
2G302
TIXM107/8
2N1305 TEXAS INSTRUMENTS
2N1307 TEXAS INSTRUMENTS
030i TRANSISTOR
2G374
2N711 TEXAS INSTRUMENTS
2N1305
2n388 texas instruments
2N404 transistor
2N711B
2n711
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Untitled
Abstract: No abstract text available
Text: SPECIALTY PRODUCTS Transistor Sockets .022" dia. Jumpers H IM Series 917,999 • Series 917 TO package sockets are available in 3,4,8 and 10 pins. • Two 8 pin versions feature pin centers on .200" or .230" circle. • Uses Mill-Max# 1705 pin, see page 87 for details.
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O-100
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M38527
Abstract: M38527/2-05D M38527/01-036D A55485/02-032D M38527/06-022D M38527/3-01D M38527/02-001D M38527/02-005D M38527/03-015N M38527/1-030D
Text: molded power transistor mounts Material Specifications: Nylon, per ASTM D 4066 PA111 UL Rated 94V-2 Oxygen Rating Index: Over 28% Standard Drawing Tolerances: unless otherwise indicated Fractions: +_ 1/64 (0.4) .XX = +_ 0.01 (0.25) + _ 0.10 (2.5) .X = .XXX = +_ 0.005 (0.13)
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PA111
O-202,
O-220
HC-18/U,
HC-43/U
HC-49/U
CI-192-028
M38527
M38527/2-05D
M38527/01-036D
A55485/02-032D
M38527/06-022D
M38527/3-01D
M38527/02-001D
M38527/02-005D
M38527/03-015N
M38527/1-030D
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14202
Abstract: No abstract text available
Text: M60 Section 6 FREV2 11/23/11 12:03 PM Page 98 MICRO JACKS • Space saving design for high density packaging • Beryllium Copper multi-spring contact maintains retention after multiple insertions • Ideal for mounting transistors, resistors, diodes, IC’s and similar
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ASTM-B16
QQ-C-533)
MIL-G-45204
MIL-T-10727
14202
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Untitled
Abstract: No abstract text available
Text: M60 Section 6 FREV1A1-COLOR 4/4/13 5:29 PM Page 98 MICRO JACKS • Space saving design for high density packaging • Beryllium Copper multi-spring contact maintains retention after multiple insertions • Ideal for mounting transistors, resistors, diodes, IC’s and similar
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ASTM-B16
QQ-C-533)
MIL-T-10727,
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multispring
Abstract: ASTM-B16 MIL-T-10727
Text: M55-S-NPS Final 10-08:M55 -NPS final revise 8-08 11/20/08 9:23 AM Page 4 MICRO MICROJACKS PINS • Space saving design for high density packaging • Beryllium Copper multi-spring contact maintains retention after multiple insertions • Ideal for mounting transistors,
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M55-S-NPS
ASTM-B16
QQ-C-533)
MIL-T-10727,
Gold/101
multispring
ASTM-B16
MIL-T-10727
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FD9515
Abstract: k 3525 MOSFET 1RFU020 fu022 irfu020 FU020 IRFR022 lg 87a
Text: H E INTERNATIONAL I 4055452 QQOÛEba I 1 Data Sheet No. FD-9.515A T-35-25 RECTIFIER IOR INTERNATIONAL RECTIFIER AVALANCHE AND dv/dt RATED IRFROSO IRFROSS IRFUOSO IRFUOSS HEXFET TRANSISTORS N-CHANNEL Product Summary 50 Volt, 0.10 Ohm HEXFET T he H E X F E T technology is the key to International
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T-35-25
IRFR020,
IRFR022,
IRFU020,
IRFU022
FD9515
k 3525 MOSFET
1RFU020
fu022
irfu020
FU020
IRFR022
lg 87a
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CHT200PGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT200PGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=0.3V(max.)(IC=500mA) * High saturation current capability. DPAK CONSTRUCTION .024 (0.60)
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CHT200PGP
500mA)
500mA
500mA;
200mA
10MHz
300uSec;
CHT200PGP
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data base dpak
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT200PPT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=0.3V(max.)(IC=500mA) * High saturation current capability. DPAK CONSTRUCTION .024 (0.60)
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CHT200PPT
500mA)
500mA
500mA;
200mA
10MHz
300uSec;
data base dpak
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CHT210PGP
Abstract: cht210
Text: CHENMKO ENTERPRISE CO.,LTD CHT210PGP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.3V(max.)(IC=-500mA) * High saturation current capability. DPAK CONSTRUCTION
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CHT210PGP
-500mA)
-500mA
-500mA;
-50mA
-200mA
100MHz
300uSec;
CHT210PGP
cht210
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PNP 2A DPAK
Abstract: data base dpak
Text: CHENMKO ENTERPRISE CO.,LTD CHT210PPT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 25 Volts CURRENT 5 Ampere FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=-0.3V(max.)(IC=-500mA) * High saturation current capability. DPAK CONSTRUCTION
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CHT210PPT
-500mA)
-500mA
-500mA;
-50mA
-200mA
100MHz
300uSec;
PNP 2A DPAK
data base dpak
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j117 motorola
Abstract: motorola j117
Text: MOTOROLA Order this document by MRF281/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF281SR1 MRF281ZR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for digital and analog cellular PCN and PCS base station
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MRF281/D
MRF281SR1
MRF281ZR1
MRF281/D
j117 motorola
motorola j117
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CHT5113PGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT5113PGP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 60 Volts CURRENT 6 Amperes APPLICATION * High current amplifier. FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=0.55V(Max.)(IC/IB=6A/0.3A) .050 (1.27)
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CHT5113PGP
-100mA;
CHT5113PGP
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data base dpak
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHT5113PPT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 60 Volts CURRENT 6 Amperes APPLICATION * High current amplifier. FEATURE * Small flat package. DPAK * Low saturation voltage VCE(sat)=0.55V(Max.)(IC/IB=6A/0.3A) .050 (1.27)
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CHT5113PPT
-100mA;
data base dpak
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Untitled
Abstract: No abstract text available
Text: WJ-RA62/SMRA62 2000 to 6000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 1.5-6.2 GHz TYP. MEDIUM GAIN: 16.0 dB (TYP.) MEDIUM OUTPUT POWER: +13.0 dBm (TYP.) LOW NOISE FIGURE: 4.0 dB (TYP.) Outline Drawings
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WJ-RA62/SMRA62
50-ohm
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transistor BC 157
Abstract: 13000 transistor TO-220
Text: u u U A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings
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SMA66
1-800-WJ1-4401
transistor BC 157
13000 transistor TO-220
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SB1182PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. DPAK DPAK .050 (1.27) .030 (0.77) * PC= 1.5 W (mounted on ceramic substrate).
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2SB1182PT
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Wja66
Abstract: No abstract text available
Text: WJ-A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: 4.0 dB (TYP.) HIGH OUTPUT LEVEL: +15 dBm (TYP.) ULTRA LOW PHASE DEVIATION FROM LINEARITY: < ±2°, 100 -1000 MHz
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WJ-A66
SMA66
50-ohm
Wja66
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2SB1182GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SB1182GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE * Small flat package. DPAK DPAK .050 (1.27) .030 (0.77) * PC= 1.5 W (mounted on ceramic substrate).
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2SB1182GP
2SB1182GP
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MO-193 footprint
Abstract: CA 4570 QCI-39000
Text: PACKAGING Commercial/Industrial Outlines and Parameters PART NUMBER SUFFIX DESIGNATIONS: XXXXXXXXXX Device Type Options -XX X Speed or Temperature Frequency /XX XXX Package Pattern Examples: 24LC65-I/SN PIC16C54-RCI/SO Memory Products Microcontroller Products
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24LC65-I/SN
PIC16C54-RCI/SO
28CXX
93LCXX
MO-193 footprint
CA 4570
QCI-39000
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QCI-39000
Abstract: No abstract text available
Text: SECTION 11 PACKAGING Commercial/Industrial Outlines and Parameters . 11-1 Product Tape and Reel Specifications . 11-52
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DS00049Q-page
24LC65-I/SN
PIC16C54-RCI/SO
DS30258C-page
QCI-39000
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QCI-39000
Abstract: C04090 C04-067
Text: SECTION 11 PACKAGING Commercial/Industrial Outlines and Parameters . 11-1 Product Tape and Reel Specifications . 11-52
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DS00049N-page
11-ii
24LC65-I/SN
PIC16C54-RCI/STemperature
DS30258C-page
QCI-39000
C04090
C04-067
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68L SOT 353
Abstract: tip 3035 transistor C04-067 footprint jedec MS-026 TQFP SP-750 footprint jedec MS-026 TQFP 128 C0421 30014 c04090 transistor wm
Text: SECTION 11 PACKAGING Outlines and Parameters . 1 Product Tape and Reel Specifications . 58
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DS00049R-page
68L SOT 353
tip 3035 transistor
C04-067
footprint jedec MS-026 TQFP
SP-750
footprint jedec MS-026 TQFP 128
C0421
30014
c04090
transistor wm
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Untitled
Abstract: No abstract text available
Text: [^ ©yeTT ©attäl « IDevices. Inc. M ED IUM TO HIGH V O LT A G E, HIGH C U R R E N T CHIP NUMBER PIMP EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: ► 50,000 A Aluminum Collector: Gold Polished silicon or "Chrome Nickel Silver" also available
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938mm
938mm)
508mm)
700mm)
524mm)
203mm)
O-114
10MHz
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