Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    01N60 Search Results

    SF Impression Pixel

    01N60 Price and Stock

    Infineon Technologies AG IKN01N60RC2ATMA1

    IGBTs HOME APPLIANCES 14
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics IKN01N60RC2ATMA1 2,744
    • 1 $0.73
    • 10 $0.544
    • 100 $0.391
    • 1000 $0.246
    • 10000 $0.179
    		Buy Now

    Micro Commercial Components MCU01N60A-TP

    MOSFETs N-CHANNEL MOSFET, DPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MCU01N60A-TP 2,458
    • 1 $0.63
    • 10 $0.544
    • 100 $0.377
    • 1000 $0.268
    • 10000 $0.207
    		Buy Now

    Central Semiconductor Corp 1N6000B BK PBFREE

    Zener Diodes 10Vz 15 Ohm 0.1 uA 8 Vr 50mA 500mW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1N6000B BK PBFREE
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Central Semiconductor Corp 1N6000B TR PBFREE

    Zener Diodes 10Vz 15 Ohm 0.1 uA 8 Vr 50mA 500mW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1N6000B TR PBFREE
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.041
    		Get Quote

    Central Semiconductor Corp 1N6000B BK TIN/LEAD

    Zener Diodes 10Vz 15 Ohm 0.1 uA 8 Vr 50mA 500mW
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 1N6000B BK TIN/LEAD
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Find more 01N60 price and stock on Findchips.com

    01N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    01N60S5

    Abstract: 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: 01N60S5 01N60S5 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology • Ultra low gate charge Product Summary •=Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 SPUx7N60S5/SPDx7N60S5 Q67040-S4193 01N60S5 01N60S5 01N60 SPD01N60S5 SPU01N60S5 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    01n60

    Abstract: 01N60C3 SPS01N60C3
    Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 01n60 01N60C3 SPS01N60C3

    01N60C3

    Abstract: SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.3 A SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 01N60C3 SPN01N60C3 VPS05163 smd diode MARKING 03A

    SPD01N60S5

    Abstract: 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193
    Text: 01N60S5 01N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60S5 SPD01N60S5 P-TO252 P-TO251-3-1 Q67040-S4193 01N60S5 SPD01N60S5 01N60S5 SPU01N60S5 01N60 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193

    01N60

    Abstract: BFR 965 01N6 dpak 369C NDD01N60
    Text: 01N60, 01N60 N-Channel Power MOSFET 600 V, 8.5 W Features • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.com Compliant ABSOLUTE MAXIMUM RATINGS TJ = 25°C unless otherwise noted Drain−to−Source Voltage


    Original     		PDF NDD01N60, NDT01N60 NDD01N60/D 01N60 BFR 965 01N6 dpak 369C NDD01N60

    01N60S5

    Abstract: SPD01N60S5 SPU01N60S5
    Text: 01N60S5 01N60S5 Preliminary data Cool MOS Power-Transistor • New revolutionary high voltage technology · Ultra low gate charge · Periodic avalanche rated · Extreme dv/dt rated · Optimized capacitances · Improved noise immunity · Former development designation:


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO251-3-1 P-TO252 01N60S5 01N60S5 Q67040-S4193 SPD01N60S5

    Untitled

    Abstract: No abstract text available
    Text: 01N60S5 Preliminary data Cool MOS Small-Signal-Transistor COOLMOS Power Semiconductors •=New revolutionary high voltage technology D,2/4 • Ultra low gate charge 4 • Extreme dv/dt rated 3 •=Optimized capacitances G,1 2 S,3 •=Improved noise immunity


    Original     		PDF SPN01N60S5 SPN01N60S5 OT-223 01N60S5 VPS05163 Q67040-S4208

    Untitled

    Abstract: No abstract text available
    Text: NDDL1N60Z, NDTL1N60Z Product Preview N-Channel Power MOSFET 600 V, 15 W Features http://onsemi.com • 100% Avalanche Tested • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant V BR DSS RDS(ON) MAX 600 V 15 W @ 10 V ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)


    Original     		PDF NDDL1N60Z, NDTL1N60Z NDDL1N60Z/D

    SPN01N60S5

    Abstract: 01n60 01N60S5 GPS05560 VPS05163
    Text: 01N60S5 Preliminary data D,2/4 Cool MOS Small-Signal-Transistor 4 • New revolutionary high voltage technology • Ultra low gate charge • Extreme dv/dt rated 3 G,1 • Optimized capacitances 2 S,3 1 • Improved noise immunity VPS05163 COOLMOS Power Semiconductors


    Original     		PDF SPN01N60S5 VPS05163 SPN01N60S5 OT-223 01N60S5 Q67040-S4208 01n60 01N60S5 GPS05560 VPS05163

    STK and STR integrated circuits

    Abstract: transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code
    Text: SMD-codes DATABOOK Active SMD semiconductor components marking codes • 235.000 SMD-codes for active semiconductor components: • Diodes, Transistors, Thyristors, Integrated Circuits • Case pin assignment • Pinout • Marking style • Schematic diagram


    Original     		PDF OD-80 OT-223 OT-89 STK and STR integrated circuits transistor smd zG 1e STR-Z4579 Turuta 6 pin TRANSISTOR SMD CODE PA transistor 5d smd ELM85361A STK and STR integrated circuits, 2011 edition 5g smd transistor 15D diode smd code

    TRANSISTOR SMD MARKING CODE 2A

    Abstract: 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A
    Text: 01N60C3 Rev. 2.1 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.3 A • New revolutionary high voltage technology • Ultra low gate charge SOT-223 • Extreme dv/dt rated • Ultra low effective capacitances 4 • Improved transconductance


    Original     		PDF SPN01N60C3 OT-223 Q67040-S4208 VPS05163 01N60C3 TRANSISTOR SMD MARKING CODE 2A 01N60C3 01n60 SPN01N60C3 VPS05163 smd diode MARKING 03A

    01N60C3

    Abstract: 01N60 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3
    Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251 Q67040-S4193 01N60C3 01N60C3 01N60 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3

    01N60C3

    Abstract: P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N60
    Text: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 Q67040-S4193 01N60C3 01N60C3 P-TO251-3-1 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N60

    01N60S5

    Abstract: 01n60 SPD01N60S5 SPU01N60S5
    Text: 01N60S5 01N60S5 Final data Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Periodic avalanche rated VDS @ Tjmax • Extreme dv/dt rated RDS on • Optimized capacitances ID P-TO252


    Original     		PDF SPU01N60S5 SPD01N60S5 SPUx7N60S5/SPDx7N60S5 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 01N60S5 01n60 SPD01N60S5

    SPN01N60S5

    Abstract: No abstract text available
    Text: 01N60S5 Final data Cool MOSä ä Power-Transistor • New revolutionary high voltage technology • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax • Optimized capacitances RDS on • Improved noise immunity ID 650 V 6 Ω 0.3


    Original     		PDF SPN01N60S5 OT-223 VPS05163 Q67040-S4208 01N60S5 SPN01N60S5

    01n60c3

    Abstract: PG-TO251-3-1
    Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251-3-1 SPD01N60C3 Q67040-S4188 01N60C3 01N60C3 PG-TO251-3-1

    Untitled

    Abstract: No abstract text available
    Text: 01N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 PG-TO-251-3-11

    01N60C

    Abstract: 01n60c3 SPS01N60C3 01N60
    Text: 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO251-3-11 • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPS01N60C3 PG-TO251-3-11 PG-TO251-3-11 01N60C3 PG-TO-251-3-11 01N60C 01n60c3 SPS01N60C3 01N60

    01N60

    Abstract: 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6
    Text: 01N60C3 01N60C3 Rev. 2.0 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 Q67040-S4193 01N60C3 01N60 01n60c3 P-TO251-3-1 603 marking to252 P-TO252 Q67040-S4188 Q67040-S4193 SPD01N60C3 SPU01N60C3 01N6

    V4680

    Abstract: 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A
    Text: 01N60S5 Preliminary data Cool MOS Power-Transistor COOLMOS •=New revolutionary high voltage technology Power Semiconductors • Ultra low gate charge Product Summary • Extreme dv/dt rated VDS @ Tjmax •=Optimized capacitances RDS on •=Improved noise immunity


    Original     		PDF SPN01N60S5 OT-223 Q67040-S4208 VPS05163 01N60S5 V4680 01N60S5 SPN01N60S5 smd diode code 03a GPS05560 VPS05163 smd diode MARKING 03A

    01N60

    Abstract: SID01N FET marking code RD-187 FET marking codes FET MARKING QG 100C RD187
    Text: 01N60 1.6A, 600V,RDS ON 8Ω N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product TO-251 Description 2.3±0.1 6.6±0.2 5.3±0.2 The 01N60 provide the designer with the best combination 0.5±0.05 of fast switching.


    Original     		PDF SID01N60 O-251 SID01N60 O-251 01N60 01-Jun-2002 01N60 SID01N FET marking code RD-187 FET marking codes FET MARKING QG 100C RD187

    TO-251 footprint

    Abstract: 01n60c3 603 marking to252 infineon marking TO-252 SPU01N60C3 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 01n60
    Text: 01N60C3 01N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 6 Ω ID 0.8 A • New revolutionary high voltage technology • Ultra low gate charge PG-TO252 • Periodic avalanche rated PG-TO251 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 PG-TO252 PG-TO251 Q67040-S4193 01N60C3 TO-251 footprint 01n60c3 603 marking to252 infineon marking TO-252 SPU01N60C3 603 to252 Q67040-S4188 Q67040-S4193 SPD01N60C3 01n60

    Untitled

    Abstract: No abstract text available
    Text: 01N60C3 01N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS 600 V RDS on 6 Ω ID 0.8 A P-TO252 • Periodic avalanche rated P-TO251-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPU01N60C3 SPD01N60C3 P-TO252 P-TO251-3-1 P-TO251-3-1 Q67040-S4193 Q67040-S4188

    01N60J

    Abstract: No abstract text available
    Text: Advanced Power Electronics Corp. 01N60H/J-HF-3 N-channel Enhancement-mode Power MOSFET Simple Drive Requirement D 100% Avalanche Test Fast Switching Characteristics G RoHS-compliant, halogen-free BV DSS 600V R DS ON 8Ω ID 1.6A S Description D (tab) G


    Original     		PDF AP01N60H/J-HF-3 O-252 AP01N60H-HF-3 O-252 O-251 AP01N60J-HF-3) AP01N60 01N60J O-251 01N60J