Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 20 RELEASED FOR PUBLICATION 6 5 4 3 2 20 LOC GP ALL RIGHTS RESERVED. BY - D SCALE 3:1 7 1 REVISIONS DIST 00 P LTR DESCRIPTION DWN APVD G1 REVISED PER ECO-11-003319 01APR2011 JY CW H REVISED PER ECO-12-011010 13JUN2012
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ECO-11-003319
01APR2011
ECO-12-011010
13JUN2012
ECO-14-000886
20FEB2014
04JUN03
06MAY04
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m955
Abstract: M9551 M95512-DF
Text: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width
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M95512-W
M95512-R
M95512-DR
M95512-DF
512-Kbit
M95512-W
M95512DR
M95512-DF
200-year
m955
M9551
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Untitled
Abstract: No abstract text available
Text: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width
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M95512-W
M95512-R
M95512-DR
M95512-DF
512-Kbit
M95512-W
M95512-R
M95512DR
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High Current Low Side Driver ST
Abstract: No abstract text available
Text: L6398 High voltage high and low side driver Features • High voltage rail up to 600 V ■ dV/dt immunity ±50 V/ns in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink $ 0 ■ Switching times 75/35 ns rise/fall with 1 nF load
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L6398
L6398
High Current Low Side Driver ST
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SVDF8N60F
Abstract: 8N60
Text: 8N60 Surface Mount N-Channel Power MOSFET DRAIN CURRENT P b Lead Pb -Free 8 AMPERES Description: The WEITRON 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have
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O-220
01-Apr-2011
O-220
O-220F
O-220F
47MAX
75MAX
SVDF8N60F
8N60
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14-13MSB
Abstract: UFDFPN8
Text: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width
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M95512-W
M95512-R
M95512-DR
M95512-DF
512-Kbit
M95512-W
M95512DR
M95512-DF
200-year
14-13MSB
UFDFPN8
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M95512
Abstract: M95512-DR M95512-R M95512-W
Text: M95512-DR M95512-R M95512-W 512 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes ■ Additional Write lockable Page (Identification
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M95512-DR
M95512-R
M95512-W
40-year
M95512
M95512-DR
M95512-W
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Untitled
Abstract: No abstract text available
Text: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet - production data Features • Compatible with the Serial Peripheral Interface SPI bus SO8 (MN) 150 mil width • Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes
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M95512-W
M95512-R
M95512-DR
M95512-DF
512-Kbit
M95512-W
M95512-R
M95512DR
DocID11124
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AN2014
Abstract: stmicroelectronics eeprom AI-117 QNEE9801 stmicroelectronics serial eeproms
Text: AN2014 Application note How a designer can make the most of STMicroelectronics Serial EEPROMs Introduction Electrically erasable and programmable memory EEPROM devices are standard products, used for the non-volatile storage of parameters and fine-granularity data.
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AN2014
stmicroelectronics eeprom
AI-117
QNEE9801
stmicroelectronics serial eeproms
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Untitled
Abstract: No abstract text available
Text: M95512-DF M95512-R M95512-W 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width
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PDF
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M95512-DF
M95512-R
M95512-W
512-Kbit
M95512-R
40-year
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Untitled
Abstract: No abstract text available
Text: M95512-W M95512-R M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet - production data Features • Compatible with the Serial Peripheral Interface SPI bus SO8 (MN) 150 mil width • Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes
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M95512-W
M95512-R
M95512-DF
512-Kbit
M95512-W
DocID11124
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Untitled
Abstract: No abstract text available
Text: STEVAL-ISA088V1 1 A step-down switching regulator based on the L5970D Data brief Features • Max output current: 1 A ■ Output voltage from 1.235 V to 35 V ■ Operating input voltage from 4.4 V to 36 V ■ Internal switching frequency: 250 kHz ■ Synchronization pin for cases where a higher
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STEVAL-ISA088V1
L5970D
STEVAL-ISA088V1
L5970D,
STEVALISA088V1
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Untitled
Abstract: No abstract text available
Text: L6398 High voltage high and low side driver Features • High voltage rail up to 600 V ■ dV/dt immunity ±50 V/ns in full temperature range ■ Driver current capability: – 290 mA source, – 430 mA sink $ 0 ■ Switching times 75/35 ns rise/fall with 1 nF load
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L6398
L6398
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EEPROM
Abstract: M95512
Text: M95512-DR M95512-R M95512-W 512 Kbit serial SPI bus EEPROM with high-speed clock Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes ■ Additional Write lockable Page (Identification
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PDF
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M95512-DR
M95512-R
M95512-W
40-year
EEPROM
M95512
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Untitled
Abstract: No abstract text available
Text: M95512-W M95512-R M95512-DR M95512-DF 512-Kbit serial SPI bus EEPROM Datasheet − production data Features • Compatible with the Serial Peripheral Interface SPI bus ■ Memory array – 512 Kb (64 Kbytes) of EEPROM – Page size: 128 bytes SO8 (MN) 150 mil width
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Original
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PDF
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M95512-W
M95512-R
M95512-DR
M95512-DF
512-Kbit
M95512-W
M95512DR
M95512-DF
200-year
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Untitled
Abstract: No abstract text available
Text: STEVAL-ISA090V1 3.5 A step-down switching regulator based on the L4973 Data brief Features • Input voltage range: 8 V to 55 V ■ Output voltage: 5.1 V ± 3% line, load and thermal ■ Output ripple: 51 mV ■ Output current range: 1 mA to 3.5 A ■ Max output ripple current: 30%
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STEVAL-ISA090V1
L4973
STEVAL-ISA090V1
L4973,
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