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    01APR2003 Search Results

    01APR2003 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    DS1220

    Abstract: M48Z02 M48Z12 24-Pin Plastic DIP
    Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection


    Original     		PDF M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24 DS1220 M48Z02 M48Z12 24-Pin Plastic DIP

    DS1225

    Abstract: M48Z08 M48Z18
    Text: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection


    Original     		PDF M48Z08 M48Z18 M48Z08: M48Z18: PCDIP28 DS1225 M48Z08 M48Z18

    bit 3102

    Abstract: DS12887 M48T86 M4T28-BR12SH SOH28
    Text: M48T86 5.0 V PC real-time clock Not For New Design Features • Drop-in replacement for PC computer clock/calendar ■ Counts seconds, minutes, hours, days, day of the week, date, month, and year with leap year compensation ■ Clock accuracy better than ±1 minute per


    Original     		PDF M48T86 PCDIP24 bit 3102 DS12887 M48T86 M4T28-BR12SH SOH28

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional) ■ ASYNCHRONOUS PAGE READ MODE


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase and Read – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D 24Mbit

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63

    DS1225

    Abstract: M48Z08 M48Z18
    Text: M48Z08 M48Z18 5 V 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultralow power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection


    Original     		PDF M48Z08 M48Z18 M48Z08: M48Z18: PCDIP28 DS1225 M48Z08 M48Z18

    Untitled

    Abstract: No abstract text available
    Text: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection


    Original     		PDF M48Z08 M48Z18 M48Z08: M48Z18: PCDIP28

    74247 pin configuration

    Abstract: 74247
    Text: Part Number 856111 73.5896 MHz SAW Filter Data Sheet Features • • • • • • • For CDMA basestation IF applications Usable bandwidth of 1.2 MHz Low loss High attenuation Single-ended operation Ceramic Surface Mount Package SMP Package Pin Configuration


    Original     		PDF 15mm/-0 01-Apr-2003 74247 pin configuration 74247

    Untitled

    Abstract: No abstract text available
    Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T58 M48T58Y M48T58: M48T58Y: PCDIP28

    M48T59

    Abstract: M48T59V M48T59Y M4T28-BR12SH1 SOH28
    Text: M48T59 M48T59Y, M48T59V 5.0 or 3.3 V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM Not For New Design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration


    Original     		PDF M48T59 M48T59Y, M48T59V M48T59: M48T59Y: M48T59V M48T59 M48T59Y M4T28-BR12SH1 SOH28

    DS12887

    Abstract: M48T86 M4T28-BR12SH SOH28
    Text: M48T86 5.0 V PC real-time clock Features • Drop-in replacement for PC computer clock/calendar ■ Counts seconds, minutes, hours, days, day of the week, date, month, and year with leap year compensation ■ Clock accuracy better than ±1 minute per month


    Original     		PDF M48T86 PCDIP24 500ms DS12887 M48T86 M4T28-BR12SH SOH28

    Untitled

    Abstract: No abstract text available
    Text: M48Z08 M48Z18 5 V, 64 Kbit 8 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection


    Original     		PDF M48Z08 M48Z18 M48Z08: M48Z18: PCDIP28 M48Z08,

    1TJS125FH2A212

    Abstract: 1TJS125 m41t06 KDS DT-38
    Text: M41T0 Serial real-time clock Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance 12.5 pF providing exceptional oscillator stability and high crystal series resistance operation


    Original     		PDF M41T0 1TJS125FH2A212 1TJS125 m41t06 KDS DT-38

    M48T59

    Abstract: M48T59V M48T59Y M4T28-BR12SH1 SOH28 EP-28-1
    Text: M48T59 M48T59Y, M48T59V 5.0 or 3.3 V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM Not For New Design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration


    Original     		PDF M48T59 M48T59Y, M48T59V M48T59: M48T59Y: M48T59V PCDIP28 28-lead M48T59 M48T59Y M4T28-BR12SH1 SOH28 EP-28-1

    Untitled

    Abstract: No abstract text available
    Text: M48Z02 M48Z12 5 V, 16 Kbit 2 Kb x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM and powerfail control circuit ■ Unlimited WRITE cycles ■ READ cycle time equals WRITE cycle time ■ Automatic power-fail chip deselect and WRITE protection


    Original     		PDF M48Z02 M48Z12 M48Z02: M48Z12: PCDIP24

    M48T58

    Abstract: M48T58Y SOH28
    Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T58 M48T58Y M48T58: M48T58Y: PCDIP28 M48T58 M48T58Y SOH28

    M48T58

    Abstract: STMicroelectronics
    Text: M48T58 M48T58Y 5.0 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real-time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T58 M48T58Y M48T58: M48T58Y: 28-lead STMicroelectronics

    M41T01

    Abstract: M41T0 SMD crystal unit
    Text: M41T0 Serial real-time clock Features • Counters for seconds, minutes, hours, day, date, month, years, and century ■ 32 KHz crystal oscillator integrating load capacitance 12.5 pF providing exceptional oscillator stability and high crystal series resistance operation


    Original     		PDF M41T0 M41T01 M41T0 SMD crystal unit

    x13003 TRANSISTOR

    Abstract: x13003 transistor X13003 STX13003-AP X13003G transistor STX13003 STX13003G-AP STX13003 STX13003G JESD97
    Text: STX13003 High voltage fast-switching NPN power transistor Features • High voltage capability ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed Applications ■ Compact fluorescent lamps CFLs


    Original     		PDF STX13003 O-92AP STX13003G STX13003G-AP x13003 TRANSISTOR x13003 transistor X13003 STX13003-AP X13003G transistor STX13003 STX13003 JESD97

    M48T58

    Abstract: M48T58Y SOH28
    Text: M48T58 M48T58Y 5.0V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated, ultra low power SRAM, real time clock, power-fail control circuit and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds


    Original     		PDF M48T58 M48T58Y PCDIP28 M48T58: M48T58Y: 28-lead M48T58 M48T58Y SOH28

    A11-A21

    Abstract: A0-A21 M29DW640D M29DW640DB 3A800
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63 A11-A21 A0-A21 M29DW640D M29DW640DB 3A800

    Untitled

    Abstract: No abstract text available
    Text: M29DW640D 64 Mbit 8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA FEATURES SUMMARY • SUPPLY VOLTAGE Figure 1. Packages – VCC = 2.7V to 3.6V for Program, Erase and Read ■ – VPP =12V for Fast Program (optional)


    Original     		PDF M29DW640D TSOP48 24Mbit TFBGA63