CDM-AEC-Q100-011
Abstract: VND5E025AK-E VND5E025AKTR-E
Text: VND5E025AK-E Double channel high side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 4V Operating voltage range VCC 4.5 to 28 V Max on-state resistance per ch. RON 25 mΩ Current limitation (typ) ILIMH
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VND5E025AK-E
PowerSSO-24
CDM-AEC-Q100-011
VND5E025AK-E
VND5E025AKTR-E
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Untitled
Abstract: No abstract text available
Text: VND5E025AK-E Double channel high-side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max on-state resistance per ch. RON 25 mΩ Current limitation (typ)
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VND5E025AK-E
PowerSSO-24
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Untitled
Abstract: No abstract text available
Text: STL150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS STL150N3LLH5 30 V RDS on max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb 1 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STL150N3LLH5
STL150N3LLH5
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Untitled
Abstract: No abstract text available
Text: STL150N3LLH5 N-channel 30 V, 0.0014 Ω typ., 35 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDS RDS on max. ID STL150N3LLH5 30 V 0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb
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STL150N3LLH5
DocID14092
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Untitled
Abstract: No abstract text available
Text: VND5E025AK-E Double channel high-side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max on-state resistance per ch. RON 25 mΩ Current limitation (typ)
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VND5E025AK-E
PowerSSO-24
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st marking c4 diode DO-214AB
Abstract: 1N4007 SMB l3lx 1N4007 definitions 1N4007 tvs SMC MARKING ipc SMB SMC LNBTVS3-220U LNBTVS4-220S LNBTVS4-222S
Text: LNBTVS Transil for low noise block protection Features • Peak pulse power: – up to 3 kW 10/1000 µs – up to 22.5 kW (8/20 µs) ■ Breakdown voltage range: from 23.1 V to 30 V ■ Low clamping factor ■ Unidirectional with low VF (VF = 1.2 V at 3 A)
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DO-214AB)
DO-214AA)
st marking c4 diode DO-214AB
1N4007 SMB
l3lx
1N4007 definitions
1N4007
tvs SMC MARKING
ipc SMB SMC
LNBTVS3-220U
LNBTVS4-220S
LNBTVS4-222S
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QST101
Abstract: AN2035 AN2036 AN1181 AN1709 AN2547 IEC1000-4-2 JESD97 QST101AU6
Text: QST101 Capacitive touch sensor device single key with individual key state output Preliminary Data Features • Patented charge-transfer design ■ Single QTouch key ■ Individual key state output ■ Fully “debounced” results ■ Self-calibration and drift compensation
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QST101
QST101
AN2035
AN2036
AN1181
AN1709
AN2547
IEC1000-4-2
JESD97
QST101AU6
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VND5E050AJ-E
Abstract: VND5E VND5E050AK-E CDM-AEC-Q100-011 VND5E050AK
Text: VND5E050AJ-E VND5E050AK-E Double channel high side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max On-state resistance per ch. RON 50 mΩ Current limitation (typ)
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VND5E050AJ-E
VND5E050AK-E
2002/95/EC
VND5E050AJ-E
VND5E
VND5E050AK-E
CDM-AEC-Q100-011
VND5E050AK
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M45PE10
Abstract: No abstract text available
Text: M45PE10 1-Mbit, page-erasable serial flash memory with byte-alterability and 75 MHz SPI bus interface Features • SPI bus compatible serial interface ■ 75 MHz clock rate maximum ■ 2.7 V to 3.6 V single supply voltage ■ 1-Mbit of page-erasable Flash memory
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M45PE10
4011h)
M45PE10
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M48T59
Abstract: M48T59V M48T59Y M4T28-BR12SH1 SOH28
Text: M48T59 M48T59Y, M48T59V 5.0 or 3.3 V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM Not For New Design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration
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M48T59
M48T59Y,
M48T59V
M48T59:
M48T59Y:
M48T59V
M48T59
M48T59Y
M4T28-BR12SH1
SOH28
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STL65N3LLH5
Abstract: No abstract text available
Text: STL65N3LLH5 N-channel 30 V, 0.0048 Ω, 19 A, PowerFLAT 5x6 STripFET™ V Power MOSFET Features Order code VDSS RDS on max ID STL65N3LLH5 30 V <0.0058 Ω 19 A (1) 1. The value is rated according Rthj-pcb 1 2 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STL65N3LLH5
STL65N3LLH5
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intc 001107
Abstract: SPC560 PCR 406 J APC UPS CIRCUIT DIAGRAM SPC560P SPC560x spc560b transistor pcr 606 j STMICROELECTRONICS MSL PCR 606 J
Text: RM0017 Reference manual SPC560B4x, SPC560B5x, SPC560C4x, SPC560C5x 32-bit MCU family built on the embedded Power Architecture Introduction The SPC560x is a new family of next generation microcontrollers built on the Power Architecture™ embedded category. This document describes the features of the family and
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RM0017
SPC560B4x,
SPC560B5x,
SPC560C4x,
SPC560C5x
32-bit
SPC560x
intc 001107
SPC560
PCR 406 J
APC UPS CIRCUIT DIAGRAM
SPC560P
spc560b
transistor pcr 606 j
STMICROELECTRONICS MSL
PCR 606 J
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MPC5604B
Abstract: PCR 406 J 10523 SDC 339 Bosch 30428 bosch me 7.3.1 0 261 207 609 pinout bosch edc 17 MPC5604BCRM 30541 bosch me 7.3.1 MPC5603
Text: MPC5604B/C Microcontroller Reference Manual Devices Supported: MPC5602B MPC5602C MPC5603B MPC5603C MPC5604B MPC5604C MPC5604BCRM Rev. 7 23 Jul 2010 MPC5604B/C Microcontroller Reference Manual, Rev. 7 Freescale Semiconductor 1 MPC5604B/C Microcontroller Reference Manual, Rev. 7
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MPC5604B/C
MPC5602B
MPC5602C
MPC5603B
MPC5603C
MPC5604B
MPC5604C
MPC5604BCRM
MPC5604B
PCR 406 J
10523 SDC 339
Bosch 30428
bosch me 7.3.1 0 261 207 609 pinout
bosch edc 17
MPC5604BCRM
30541
bosch me 7.3.1
MPC5603
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M48T59
Abstract: M48T59V M48T59Y M4T28-BR12SH1 SOH28 EP-28-1
Text: M48T59 M48T59Y, M48T59V 5.0 or 3.3 V, 64 Kbit 8 Kbit x 8 TIMEKEEPER SRAM Not For New Design Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ Frequency test output for real-time clock software calibration
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M48T59
M48T59Y,
M48T59V
M48T59:
M48T59Y:
M48T59V
PCDIP28
28-lead
M48T59
M48T59Y
M4T28-BR12SH1
SOH28
EP-28-1
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VN5E025AJ-E
Abstract: VN5E025AJTR-E CDM-AEC-Q100-011 PowerSSO-12
Text: VN5E025AJ-E Single channel high side driver with analog current sense for automotive applications Features Max supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28V Max On-State resistance RON 25 mΩ Current limitation typ ILIMH 60 A Off state supply current
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VN5E025AJ-E
PowerSSO-12
2002/95/EC
VN5E025AJ-E
VN5E025AJTR-E
CDM-AEC-Q100-011
PowerSSO-12
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CDM-AEC-Q100-011
Abstract: VN5E025AJ-E PowerSSO-12
Text: VN5E025AJ-E Single channel high-side driver with analog current sense for automotive applications Features Max supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max On-State resistance RON 25 mΩ Current limitation typ ILIMH 60 A Off state supply current
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VN5E025AJ-E
PowerSSO-12
2002/95/EC
CDM-AEC-Q100-011
VN5E025AJ-E
PowerSSO-12
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PDF
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Untitled
Abstract: No abstract text available
Text: VND5E050AJ-E VND5E050AK-E Double channel high side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41V Operating voltage range VCC 4.5 to 28V Max On-State resistance per ch. RON 50 mΩ Current limitation (typ)
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Original
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VND5E050AJ-E
VND5E050AK-E
2002/95/EC
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PDF
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Untitled
Abstract: No abstract text available
Text: VND5E050AJ-E VND5E050AK-E Double channel high side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 41 V Operating voltage range VCC 4.5 to 28 V Max On-state resistance per ch. RON 50 mΩ Current limitation (typ)
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VND5E050AJ-E
VND5E050AK-E
PowerSSO-24
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CDM-AEC-Q100-011
Abstract: VND5E025AK-E VND5E025AKTR-E PowerSSO-24
Text: VND5E025AK-E Double channel high side driver with analog current sense for automotive applications Features Max transient supply voltage VCC 4V Operating voltage range VCC 4.5 to 28 V Max on-state resistance per ch. RON 25 mΩ Current limitation (typ) ILIMH
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VND5E025AK-E
PowerSSO-24
CDM-AEC-Q100-011
VND5E025AK-E
VND5E025AKTR-E
PowerSSO-24
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PDF
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STL150N3LLH5
Abstract: No abstract text available
Text: STL150N3LLH5 N-channel 30 V, 0.0014 Ω, 35 A, PowerFLAT 6x5 STripFET™ V Power MOSFET Features Type VDSS STL150N3LLH5 30 V RDS(on) max ID <0.00175 Ω 35 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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STL150N3LLH5
STL150N3LLH5
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. E E COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 3 2 - LOC ALL RIGHTS RESERVED. REVISIONS DIST 00 AA P LTR DESCRIPTION D DWN 01APR2008 E C O —0 7 —0 2 6 5 3 5 APVD LAM AWE MATERIAL: HO U SING : GLASS FILLED P O LY E S TE R ;
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01APR2008
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. G iV COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC DIST AA 00 ALL RIGHTS RESERVED. R E VIS IO N S P LTR DESCRIPTION C DATE DWN 01APR2008 E C O —0 7 —0 2 6 5 3 5 APVD LAM AWE MATERIAL:
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01APR2008
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 6 5 4 2 3 - LOC ALL RIGHTS RESERVED. REVISIONS DIST AA 00 P LTR DESCRIPTION N DATE DWN 01APR2008 E C O —0 8 —0 0 4 0 5 0 APVD LAM AWF M A T E R IA L :
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01APR2008
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 7 8 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. 5 6 4 2 3 - DIST AA 00 MOLDED-IN KEYING EEATURE SEE TABLE LOR LOCATION INTER-CONTACT KEYING SLOT REVISIONS LOC ALL RIGHTS RESERVED. P LTR DESCRIPTION B
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01APR2008
31MAR2000
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