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Untitled Abstract: No abstract text available Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS	Original	PDF	BSC014N04LSI IEC61249-2-21 014N04LI
Untitled Abstract: No abstract text available Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS	Original	PDF	BSC014N04LSI IEC61249-2-21 014N04LI
Untitled Abstract: No abstract text available Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS	Original	PDF	BSC014N04LSI IEC61249-2-21 014N04LI
BSC014N04LSI Abstract: BSC014N04 Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS	Original	PDF	BSC014N04LSI IEC61249-2-21 014N04LI BSC014N04LSI BSC014N04
BSC014N04LSI Abstract: bsc014n04 BSC014N04LS Text: BSC014N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.45 mW ID 100 A QOSS	Original	PDF	BSC014N04LSI IEC61249-2-21 014N04LI BSC014N04LSI bsc014n04 BSC014N04LS