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    BSC010N04LSI

    Abstract: No abstract text available
    Text: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS


    Original     		PDF BSC010N04LSI IEC61249-2-21 010N04LI BSC010N04LSI

    Untitled

    Abstract: No abstract text available
    Text: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS


    Original     		PDF BSC010N04LSI IEC61249-2-21 010N04LI

    Untitled

    Abstract: No abstract text available
    Text: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS


    Original     		PDF BSC010N04LSI IEC61249-2-21 010N04LI

    Untitled

    Abstract: No abstract text available
    Text: BSC010N04LSI OptiMOSTM Power-MOSFET Product Summary Features • Optimized for synchronous rectification • Integrated monolithic Schottky-like diode • Very low on-resistance R DS on • 100% avalanche tested VDS 40 V RDS(on),max 1.05 mW ID 100 A QOSS


    Original     		PDF BSC010N04LSI IEC61249-2-21 010N04LI