MAFL-010140-CT0C60
Abstract: moca TRIPLEX FILTER moca
Text: MAFL-010140-CT0C60 MoCA Triplex Filter 5 - 2000 MHz Rev. V3 Features • • • • Product Image 75 Ohm SMT unit RoHS Compliant Lead Free Description • M/A-COM Technology Solutions’s MAFL-010140CT0C60 is a surface mount Triplex Filter unit designed for MoCA applications.
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MAFL-010140-CT0C60
MAFL-010140CT0C60
42MHz
1002MHz
MAFL-010140-CT0C60
moca TRIPLEX FILTER
moca
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Untitled
Abstract: No abstract text available
Text: MAFL-010140-CT0C60 MoCA Triplex Filter 5 - 2000 MHz Rev. V3 Features • • • • Product Image 75 Ohm SMT unit RoHS Compliant Lead Free Description • M/A-COM Technology Solutions’s MAFL-010140CT0C60 is a surface mount Triplex Filter unit designed for MoCA applications.
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MAFL-010140-CT0C60
MAFL-010140CT0C60
42MHz
1002MHz
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HSJ1456-010330
Abstract: No abstract text available
Text: 3.5 DIA Miniature Jacks Through Hole Style Horizontal Type Unit: mm HSJ1645-010140 h=2.5 mm 8 13.2 3 3.2 5.5 0.8 2.5 2 2 8 0.5 2 7.7 3-1 5 5 5-φ1.3 3.4 3.4 3 1 2 Schematic 1 2-1.4x2.4 3 Housing Color Black Hole Layout Bottom View 2 HSJ1645-010140 HSJ1332-01-010
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HSJ1645-010140
HSJ1332-01-010
HSJ1332-01-010
HSJ1332-01-020
HSJ1332-01-030
HSJ1332-01-040
HSJ1456-010330
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508K
Abstract: F70 Package fujitsu lvds standard MCM NAND CE61 404k bga HQFP 208 026K
Text: October 1996 Edition 2.0 DATA SHEET CE61 SERIES 0.35 MICRON HIGH PERFORMANCE/LOW POWER CMOS EMBEDDED ARRAYS DESCRIPTION The Fujitsu CE61 is a series of high performance CMOS embedded arrays featuring full support of diffused high-speed RAMS, ROMS and embedded functions. The CE61 offers
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ASIC-DS-20246-10/96
508K
F70 Package
fujitsu lvds standard
MCM NAND
CE61
404k bga
HQFP 208
026K
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Untitled
Abstract: No abstract text available
Text: HD Audio SoundMAX Codec AD1981HD FEATURES ENHANCED FEATURES 2 DAC channels: 16-, 20-, or 24-bit 2 ADC channels: 16- or 20-bit HD audio sample rates 8 kHz, 11.025 kHz, 16 kHz, 22.05 kHz, 32 kHz, 44.1 kHz, 48 kHz Greater than 90 dB dynamic range S/PDIF output: 32 kHz, 44.1 kHz or 48 kHz, 16- or 24-bit
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AD1981HD
24-bit
20-bit
MS-026BBC
48-Lead
ST-48)
AD1981HDJSTZ
AD1981HDJSTZ-REEL
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Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 DATA SHEET EDC4UV644 2/4 -(60/70)(J/T)G-S 32MByte (4M x 64) CMOS EDO DRAM Module - 3.3V General Description The EDC4UV644(2/4)-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 32-megabyte dynamic RAM module organized as 4M words by 64 bits, in a 168-pins, dual-in-line (DIMM) memory modules.
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EDC4UV644
32MByte
32-megabyte
168-pins,
MB81V1
32MBom
MP-DRAMM-DS-20389-9/96
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2MX16
Abstract: No abstract text available
Text: June 1996 Revision 1.0 DATA SHEET EDC2UV7282- 60/70 (J/T)G-S 16MByte (2M x 72) CMOS EDO DRAM Module - 3.3V (ECC) General Description The EDC2UV7282-(60/70)(J/T)G-S is a high performance, EDO (Extended Data Out) 16-megabyte dynamic RAM module organized as 2M words by 72 bits, in a 168-pins, dual-in-line (DIMM) memory module with ECC.
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EDC2UV7282-
16MByte
16-megabyte
168-pins,
MB81V17805A-
MP-DRAMM-DS-20315-6/96
2MX16
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Chips and Technologies F840
Abstract: b1115 d6160
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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0103D2
603090C0
H8/300H
Chips and Technologies F840
b1115
d6160
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MB86986
Abstract: IEEE754 MB86930 0x00001000
Text: SPARClite MB86930 TO MB86936 MIGRATION APPLICATION NOTE 5 FUJITSU MICROELECTRONICS, INC. REVISION 01 APPLICATION NOTE 5 INTRODUCTION ification, and the SPARC IEEE754 Implementation Recommendation with the Nonstandard FP NS=1 mode enabling “flush to zero” treatment of denormalized operands or results as permitted by the recommendation.
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MB86930
MB86936
IEEE754
EC-AN-20288-4/96
MB86986
0x00001000
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01A190
Abstract: No abstract text available
Text: AD1882 High Definition Audio SoundMAX Codec Data Sheet DSH-202010A February 2009 Ordering Information Device Set Order ID AD1882JCPZ* Package Type QFN Operating Temperature Package 48-Lead QFN, 7x7 mm 0°C to 70°C *Lead-free Pb Free and RoHS compliant Revision History
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AD1882
DSH-202010A
AD1882JCPZ*
48-Lead
MO-220-VKKD-2
01A190
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Untitled
Abstract: No abstract text available
Text: File E136791 Vol. 1 Vol. 12 Sec. 54 Sec. 54 and Report Page 1 Issued: Revised: 2001-06-25 2001-12-27 D E S C R I P T I O N PRODUCT COVERED: *USL, CNL battery charger, Model BCM, BVL and BL600 Series, followed by additional suffixes as described in the Part Number Designation.
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E136791
BL600
BCM-X-306-XXX-XX-XX-X
BCM-X-510-XXX-XX-XX-X
BCM-X-812-XXX-XX-XX-X
BVL-06-XXX-XX-XX-X
BVL-12-XXX-X000.
CAN/CSA-C22
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Untitled
Abstract: No abstract text available
Text: July 1996 Revision 1.0 DATA SHEET SDC4UV6482- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description IN AD FO V A R N M C AT ED IO N The SDC4UV6482-(67/84/100/125)T-S is a high performance, 32-megabtye synchronous, dynamic RAM module organized as
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SDC4UV6482-
32MByte
32-megabtye
168-pin,
MB81117822A-
MP-SDRAMM-DS-20320-7/96
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Untitled
Abstract: No abstract text available
Text: July 1996 Revision 1.0 DATA SHEET SDC2UV6412- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description IN AD FO V A R N M C AT ED IO N The SDC2UV6412-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SDC2UV6412-
16MByte
16-megabtye
168-pin,
MB811171622A-
1Mx16
MP-DRAMM-DS-20319
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Untitled
Abstract: No abstract text available
Text: August 1996 Revision 1.0 DATA SHEET SOB2UV6482- 67/84/100/125 T-S 16MByte (2M x 64) CMOS Synchronous DRAM Module General Description IN AD FO V A R N M C AT ED IO N The SOB2UV6482-(67/84/100/125)T-S is a high performance, 16-megabtye synchronous, dynamic RAM module organized as
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SOB2UV6482-
16MByte
16-megabtye
144-pin,
MB81117822A-
MP-SDRAMM-DS-20370
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Untitled
Abstract: No abstract text available
Text: May 1996 Revision 1.0 DATA SHEET DM8M2N360- 60/70 JG-IS 32MByte (8M x 36) CMOS DRAM Module General Description The DM8M2N360-(60/70)JG-IS is a high performance, 32-megabyte dynamic RAM module organized as 8M words by 36 bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.
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DM8M2N360-
32MByte
32-megabyte
72-pin,
MB8117400A-
MB814100C-
MP-DRAMM-DS-20312-4/96
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SN74ACT7804
Abstract: SN74ACT7806 SN74ACT7814
Text: SN74ACT7814 64 x 18 FIRST-IN, FIRST-OUT MEMORY SCAS209 - APRIL 1992 D L PACKAGE TOP VIEW Member of the Texas Instruments Widebus Family Load Clock and Unload Clock Can Be Asynchronous or Coincident RESET [ 1 64 Words by 18 Bits Low-Power Advanced CMOS Technology
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SN74ACT7814
SCAS209
50-pF
SN74ACT7804
SN74ACT7806
300-mll
25-mil
SN74ACT7806
SN74ACT7814
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Untitled
Abstract: No abstract text available
Text: cP August 1996 Revision 1.0 FUJI' DATA SHEET - * SDC2U V7282- 67/84/100/125 T-S 16MByte (2M x 72) CMOS Synchronous DRAM Module - ECC General Description The SDC2UV7282-(67/84/100/125)T-S is a high performance, 16 megabtye synchronous, dynamic RAM module organized as
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V7282-
16MByte
SDC2UV7282-
168-pin,
1117822A-
16MByte
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Untitled
Abstract: No abstract text available
Text: cP July 1996 Revision 1.0 FUJI' DATA SHEET - * SDC4U V6442- 67/84/100/125 T-S 32MByte (4M x 64) CMOS Synchronous DRAM Module General Description The SDC4UV6442-(67/84/100/125)T-S is a high performance, 32 rriegabtyo synchronous, dynamic RAM module organized as
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V6442-
32MByte
SDC4UV6442-
168-pin,
1117422A
32MByte
125MHz)
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Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - E D C 1 U V 6 4 1 1 !4 -(60/70)(J/T)G - S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The ED C 1U V 641(1/4)-(60/70)(JA T )G -S is a high pe rform ance, EDO (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule
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1Mx64)
168-pins,
MB81V1
-DS-20391
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Untitled
Abstract: No abstract text available
Text: <p June 1996 Revision 1.0 HATA fíH F F T - FSA8UN3642- 60/70 J(G/S)-S 32MByte (8M x 36) CMOS DRAM Module General Description The FSA8UN3642-(60/70)J(G/S)-S is a high performance, 32-megabyte dynamic RAM module organized as 8M words by 36 bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package.
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FSA8UN3642-
32MByte
32-megabyte
72-pin,
B8117400A-
MB814100C-
60ation:
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Untitled
Abstract: No abstract text available
Text: <p July 1996 Revision 1.0 HATA G H F F T - SDC1UV6412- 67/84/100/125 T-S 8MByte (1Mx64) CMOS Synchronous DRAM Module General Description The SDC1U V6412-(67/84/100/125)T-S is a high performance, 8-megabtye synchronous, dynamic RAM module organized as 1 M
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SDC1UV6412-
1Mx64)
V6412-
168-pin,
11171622A-
1Mx16
125MHz)
100MHz)
84MHz)
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Untitled
Abstract: No abstract text available
Text: September 1996 Revision 1.0 FUJITSU DATA SHEET - E O B 1 U V 6 4 1 1 /4 -(60/70)TG -S 8MByte (1Mx64) CMOS EDO DRAM Module - 3.3V General Description The E O B 1 U V 6 4 1 (1 /4 )-(6 0 /7 0 )T G -S is a high pe rfo rm an ce, E D O (E xten ded D ata O ut) 8-m e ga byte dyn am ic RAM m odule o rg a
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1Mx64)
144-pins,
B81V1
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UC2844B
Abstract: 0/UC3645B UC3645B
Text: M M O T O R O L A — — UC3844B, 45B UC2844B, 45B High Performance Current Mode Controllers The UC3844B, UC3845B series are high performance fixed frequency current mode controllers. They are specifically designed for O ff-Line and d c -to -d c converter applications offering the designer a cost-effective
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UC3844B,
UC2844B,
UC3845B
1N5819
L3Li7253
D101407
UC2844B
0/UC3645B
UC3645B
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TTK SG 2368
Abstract: BV EI 303 3628 7 segment LD 1106 BS LM 6863 D I8253 yx 8018 0308 082c ez 422 BV EI 304 3083 0429 01 2701 00 RELE 12,8 mhz e 4895 lf
Text: AP-55A APPLICATION NOTE i n t e i A u g u s t 1979 S.A. Distributor E l e c t r o n ic \ \ B u il d in g E l e m e n t s p t y l t d PURVEYORS OF a l l ELECTRONIC COMWNENTS Tel eph on e 7 8 - 9 2 2 1 / 6 P O B o x 4 6 0 9 , Pretoria T e l e x 3 01 8 1 S A
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AP-55A
PR00UCT.
MCS-48
/TP-11/1179/5K
TTK SG 2368
BV EI 303 3628
7 segment LD 1106 BS
LM 6863 D
I8253
yx 8018 0308
082c ez 422
BV EI 304 3083
0429 01 2701 00 RELE
12,8 mhz e 4895 lf
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