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    2N6903

    Abstract: No abstract text available
    Text: • 43D 22 71 DDS 4 70 0 Ì34 ■ HAS 2N 6903 03 HARRIS January 1994 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET Package Features T0-205AF BOTTOM VIEW • 0.98A, 200V • rDS(on) = 3 .6 5 n GATE SOURCE • Design Optimized for 5V Gate Drive


    OCR Scan     		T0-205AF 00S4702 2N6903 PDF

    Untitled

    Abstract: No abstract text available
    Text: f Z 7 S G S -T H O M S O N Ä 7 # 5 aJOT ßDD gt M74HC181 ARITHMETIC LOGIC UNIT/FUNCTION GENERATOR • HIGH SPEED tP D = 13 ns (TYP. AT Vcc = 5 V ■ LOW POWER DISSIPATION Icc = 4 (jA (MAX.) at TA = 25 "C ■ HIGH NOISE IMMUNITY Vnih = Vnil = 28 % Vcc (MIN.)


    OCR Scan     		M74HC181 54/74LS181 74HC181M 74HC181B1R 74HC181 S-10041 GDS4703 c32tiE37 PDF