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    00Q73 Search Results

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    00Q73 Price and Stock

    Banner Engineering Corp PVD100Q-73002

    PVD SERIES: PARTS VERIFICATION ;
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    DigiKey PVD100Q-73002 Bulk 1
    • 1 $367
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    Newark PVD100Q-73002 Bulk 1
    • 1 $380
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    E-Switch Inc TL59EF100Q7.3MM

    SWITCH TACTILE SPST-NO 0.05A 12V
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    DigiKey TL59EF100Q7.3MM Ammo Pack 10,000
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    Newark TL59EF100Q7.3MM Bulk 10,000
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    RS TL59EF100Q7.3MM Bulk 15 Weeks 10,000
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    Square D by Schneider Electric 9070T300Q7350

    Industrial Control Transformer, 300Va; Chassis Mount Transformer Type:Industrial Control; Secondary Voltages:24V, 48V; Power Rating:300Va; Frequency Range:50Hz/60Hz; Winding Type:Dual Primary, Dual Secondary; Current Rating:- Rohs Compliant: Yes |Square D By Schneider Electric 9070T300Q7350
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    Newark 9070T300Q7350 Bulk 1
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    RS 9070T300Q7350 Bulk 3 2 Weeks 1
    • 1 $1098.7
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    Banner Engineering Corp PVD100Q-73215

    Pvd Series: Parts Verification ; 100 Mm 4 Channel; Range; Up To 2 M,; Input:12-30 V Dc; Outputs: Selectable Npn/Pnp; Euro 5-Pin 150 Mm (6 In) Pvc Pigtail Connector; Retro Mode, Background Blocked = 0 |Banner Engineering PVD100Q-73215
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    Newark PVD100Q-73215 Bulk 1
    • 1 $316
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    Banner Engineering Corp PVD100Q-73002 (ALTERNATE: 73002)

    PVD Part Verification, 100mm, 4 channel, 2m, 12-30VDC, NPN/PNP, QD, Retro | Banner Engineering PVD100Q-73002
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS PVD100Q-73002 (ALTERNATE: 73002) Bulk 1
    • 1 $367
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    00Q73 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    a12t

    Abstract: transistor a12t 2SA1589 2SC4120 k 2059 TRANSISTOR Ge 2sa la 1001 sanyo PHP I 2SA15 PNP 2SA15
    Text: SANYO SEMICONDUCTOR CORP SHE D 7Ti7Q7b 2SA1589, 2SC4120 00Q73SH 3 T -3 7 -/3 ~T-35-U P N P /N P N Epitaxial Planar Silicon Transistors 2018A Switching Applications with Bias Resistance R1=22ki2 <§¡2036 Applications . Switching circuit, in terfa ce c ir c u it , driver c ir c u it


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    2SA1589, 2SC4120 00G73SS T-37-/3 T-35-U 22kohms) 2SA1589 a12t transistor a12t 2SC4120 k 2059 TRANSISTOR Ge 2sa la 1001 sanyo PHP I 2SA15 PNP 2SA15 PDF

    2N4400

    Abstract: MPS3705 ic hp samsung transistor D 586
    Text: {SAMSUNG SEMICON DUC TO R INC MPS3705 14E D | 7 ^ 4 1 4 5 00Q731fc, 7 | NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Emitter Voltage: Vceo=30V • Collector Dissipation: Pc m ax =625m W ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic


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    000731b MPS3705 625mW -55M50' 2N4400 T-29-21 100/iA, 50tnA, 100mA, ic hp samsung transistor D 586 PDF

    Untitled

    Abstract: No abstract text available
    Text: MP7616 15 V C M O S 16-Bit Multiplying Digital-to-Analog Converter Z'EXflR FEATURES • • • • • Monolithic CMOS Construction Full Four-Quadrant Multiplication Excellent Stability Over Temperature and Time TTL/5 V CMOS Compatible Guaranteed Monotonie


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    MP7616 16-Bit MP7626 MP7616B P7616 13-bit 12-bit integral75 PDF

    Untitled

    Abstract: No abstract text available
    Text: SANYO SEM ICO ND UC TOR CORP 22E D 7*n707fa 00073=12 4 FC121 T - 37-/3 PNP Epitaxial Planar Silicon Com posite Transistor 2066 Switching Applications with Bias Resistances R1=2.2kO, R2=10k0 3190 Features • On-chip bias resistances (Ri=2.2kQ,R2=lOkfl)


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    n707fa FC121 FC121 2SA1502, 100pA 6299MO 00Q73T3 PDF

    BUT1A

    Abstract: MP7628JN MP7529B MP7628 MP7628AD MP7628BD MP7628JP MP7628JS MP7628KN MP7628KP
    Text: MP7628 5 V CMOS Quad Multiplying 8-Bit Digital-to-Analog Converter T J W Æ B T Æ B rÆ B FEATURES APPLICATIONS • • • • • • • • • • Microprocessor Controlled Gain and Attenuation Circuits • Microprocessor Controlled/Programmable Power Supplies


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    MP7628 MP7529B MP7628 3422blfl 000731b BUT1A MP7628JN MP7529B MP7628AD MP7628BD MP7628JP MP7628JS MP7628KN MP7628KP PDF

    ATS35

    Abstract: No abstract text available
    Text: Standard Products UT69R000 RadHard Microcontroller Data Sheet nils July 1998 M I C R O E L E C T R O N I C SYSTEMS □ Built-in 9600 baud UART Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to


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    UT69R000 16-bit MIL-PRF-3853 MIL-STD-883 DDD73b3 69R000 T343TM7 ATS35 PDF

    Untitled

    Abstract: No abstract text available
    Text: MP7641 8-Channel Voltage Output 10 MHz Input Bandwidth 8-Bit Multiplying DACs with Serial Digital Port FEATURES • DACs Matched to ±0.5% typ • Chip Select Available: MP7651 • Low Harmonic Distortion: 0.25% typical with V r e f = 1 V p-p @ 1 MHz • VREF/2 Output Preset Level


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    MP7641 MP7651 150ns 150mW P7641 10mV/DIV) 34E2blfi GD07347 PDF

    Untitled

    Abstract: No abstract text available
    Text: P r e l im in a r y In f o r m a t io n D a ta S h e e t PMC-960840 PM I P M C -S ierra, Inc. •/ P M 4388TO C TL ISSUE 3 OCTAL T1 FRAMER FEATURES • Integrates eight T1 framers in a single device for terminating duplex DS-1 signals. • Supports SF and ESF format DS-1 signals.


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    PMC-960840 4388TO PM4388 1D04111 PDF

    Untitled

    Abstract: No abstract text available
    Text: BROOKTREE CORP b3E T> 1L45S^5 □ 0 0 7 3 7 e! SD1 • BRK 40 R8070 eo ° R8070 T1/CEPT PCM Transceiver INTRODUCTION FEATURES The Rockwell R8070 T1/CEPT PCM Transceiver is a monolithic silicon gate CMOS device designed to implement PCM trans­ mitter and receiver functions applied in primaiy-rate digital carrier


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    1L45S R8070 R8070 PCM-30 PDF

    Untitled

    Abstract: No abstract text available
    Text: @ LG Semicon. Co. LTD. Description Features The GMM7408200B S/SG is an 8M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces of 4M x 4 bit DRAMs in 24 26 pin SOJ package on both side the p rin te d c irc u it board w ith d e co u p lin g


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    GMM7408200BS/SG 7408200BS/SG GMM7408200BS GMM7408200BSG PDF

    transistor

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR IM E O INC MPS29Ö7 7^4145 000730*1 T PNP EPITAXIAL SILICON TRANSISTOR — - :— “— . '• " ' > * T -29 -21 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Vcw=40V • Collector Dissipation: Pc (max >825mW


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    MPS29 825mW transistor PDF

    Avantek amplifier

    Abstract: transistor tt 2206 TT 2206 Avantek, Inc. GPD 35C05 LMM 2057 GPD-201 Avantek rf amplifier GPD-1001 GPD-405 GPD-331
    Text: AVANTEK INC EOE O a v a n tek D • i m i l t t 0QQ7343 Selection G uide 4 GPD Series PRODUCT DESCRIPTION The GPD and G PM amplifiers, available in TO-12 4-pin and TO-39 (3-pin) packages, are designed for applications which require the highest performance-to-cost ratio or where size is


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    CA85035 TWX910-338-2206 Avantek amplifier transistor tt 2206 TT 2206 Avantek, Inc. GPD 35C05 LMM 2057 GPD-201 Avantek rf amplifier GPD-1001 GPD-405 GPD-331 PDF

    transistor 2Fn

    Abstract: PNP pN2907 MPS2907 transistor PN2907 PN2907
    Text: SAMSUNG SEMICONDUCTOR me INC MPS29Ö7 D • 7*^4145 000730*1 T PNP EPITAXIAL SILICON TRANSISTOR — - :— “— . '■ " ' > * T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Vcw =40V • Collector Dissipation: Pc (max >825mW


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    MPS29Ã T-29-21 Vcw-40V 825mW MPS2907 transistor 2Fn PNP pN2907 transistor PN2907 PN2907 PDF

    MPS3702

    Abstract: 583 transistor
    Text: SAMSUNG SEMI C ONDU CT OR INC MPS3702 14E D | 7^4145 0007312 T | PNP EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 AMPLIFIER TRANSISTOR !- • Collector-Emitter Voltage: Veto =25V • Collector Dissipation: Pc max =625mW '- TO-92 ABSOLUTE MAXIMUM RATINGS (Ta=25°C)


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    0D07312 MPS3702 625mW -55r150 T-29-21 583 transistor PDF