Untitled
Abstract: No abstract text available
Text: S 0 T 2 2 3 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR FZT600 FEATURES: * 2W POWER DISSIPATION * 2A CONTINUOUS lc * 4A PEAK lc * GUARANTEED HFE SPECIFIED UP TO 1A PARTMARKING DETAIL - FZT600 ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE UNIT 160 140
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FZT600
FZT600B
FZT600A
100mA,
20MHz
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ZTX600
Abstract: ZTX601
Text: NPN Silicon Medium Power Darlington Transistors ZTX600 ZTX601 FEATURES • • • • • 1,5W power dissipation at T amb= 2 5°C 1A continuous collector current High V CE0 up to 16 0 V Guaranteed hFE specified up to 1A Fast sw itching D E SC R IP T IO N
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ZTX600
ZTX601
ZTX601
00jiS
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x5 sot89
Abstract: QBCX51 8CX53
Text: SOT89 PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 3 - FEBRUARY 1996_ C O M P L E M E N T A R Y TYPE - BCX51 BCX52 BCX53 Q BCX51 - B C X54 B C X 5 2 - B C X55 B C X 5 3 - B C X56 P A R T M A R K I N G D E T A IL S BCX5 1 -A A BCX52 -A E BCX53
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BCX51
BCX52
BCX53
BCX53
x5 sot89
QBCX51
8CX53
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TRANSISTOR TIP42
Abstract: No abstract text available
Text: TIP42 SERIES TIP42/42A/42B/42C PNP EXITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR SWITCHING APPLICATIONS TO-220 • Complement to TIP41/41 A/41 B/41C ABSOLUTE MAXIMUM RATINGS C haracteristic Collector-Base Voltage Collector-Emitter Voltage Symbol : : :
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TIP42
TIP42/42A/42B/42C)
TIP41/41
B/41C
O-220
TIP42A
TIP42B
TIP42C
TRANSISTOR TIP42
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IP6501
Abstract: No abstract text available
Text: HIP6501A t e j s i l D a ta S h e e t J u ly 1 9 9 9 Triple Linear Power Controller with ACPI Control Interface The HIP6501 A, paired with either the HIP6020 or HIP6021, simplifies the implementation of ACPI-compliant designs in microprocessor and computer applications. The 1C
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HIP6501A
HIP6501
HIP6020
HIP6021,
16-pin
AN9846.
2SD1802
HUF7S113DKS
220nF
IP6501A
IP6501
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1358X
Abstract: No abstract text available
Text: SHARP SPEC No. ISSUE: E L 0 9 9 0 4 2 A Jan. 29 1998 To S P E C I F I C A T I O N S Product Type Model No. 1/3 type solid state B/W imaging device for CCIR system Versatile output for mirror and normal image LZ2326AJ (L Z 2 3 2 6 AR) ^This specifications contains 22 pages including the cover and appendix.
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EL099042A
LZ2326AJ
LZ2326AR
LZ2326AR
1358X
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M27G1001
Abstract: 27C1001 27C1001 eprom M27C1001
Text: SGS-THOMSON G M2 7 C 1 0 0 1 m l 1 Megabit 128K x 8 UV EPROM and OTP E PROM FAST AC C E S S T IM E : 45ns LO W PO W ER ’’C M O S ” C O N SU M PTIO N : - A ctive C urrent 3 0m A - S tan db y C urrent lOOfi.A PR O G R A M M IN G VO LTAG E: 12.75V E LEC TR O N IC S IG N ATU R E to r AU TO M ATED
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12sec.
FDIP32W
27C1001
M27G1001
27C1001 eprom
M27C1001
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f630
Abstract: IRF630 HEXFET TRANSISTORS F633 IRFG31 IRF632 alps 103 DIODE C244 mosfet f630 IRFB32 IRF63Q
Text: HE D I 4 055452 ÜGQâMTS t, | Data Sheet No. PD-9.309G INTERNATI ONAL RECTIFIER T -39-11 INTERNATIONAL RECTIFIER I “ R HEXFET* TRANSISTORS IRF63Q IRFG31 IM IRFB32 - C h a n n e l IRF633 Features: 200 Volt, 0.4 Ohm HEXFET TQ-220AB Plastic Package The HEXFET technology is the key to International Rec
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IRF63Q
IRFG31
IRFB32
IRF633
TQ-220AB
C-245
IRF630,
IRF631,
IRF632,
IRF633
f630
IRF630 HEXFET TRANSISTORS
F633
IRF632
alps 103
DIODE C244
mosfet f630
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Untitled
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DG1S234 7T2 MSriGK KMM5916100/T DRAM MODULES 1 6 M x 9 CMOS DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION Performance range: tRAC tcAC tRC 60ns 15ns 110ns KMM5916100-7 70ns 20 ns 130ns KMM5916100-8 80ns
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DG1S234
KMM5916100/T
110ns
KMM5916100-7
130ns
KMM5916100-8
KMM5916100/T
KM41C16100/T
24-pin
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs M5M44101AWJ,J,L,TP,RT-6,-7,-8,-10 NIBBLE MODE 4 1 9 4 3 0 4 -B IT 4 1 9 4 3 0 4 -W 0 R D BY 1-BIT DYNAMIC RAM DESCRIPTIO N This is a fam ily of 4 1 94304-w ord by 1-bit dynam ic RAMS, PIN C O N F IG U R A T IO N (TOP V IE W ) fabricated w ith the high performance C M OS process, and
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M5M44101AWJ
94304-w
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Untitled
Abstract: No abstract text available
Text: LR S e r ie s Up 5 W atts - LR S er ies to to 5 W atts 2:1 Input, Single and Dual Outputs F ea tu res ♦ Output Power Up to 5 W atts ♦ W ide Input Voltage Range 2:1 ♦ 1600VDC Input/Output Isolation ♦ Industry Standard Pin-Out ♦ /-Input Filter for Low Reflected Ripple Current
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1600VDC
LR12S5-1000
LR12S12-470
LR12S15-400
LR12D12-230
LR12Q15-19Q
LR24S5
LR24S12-470
LR24S15400
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87c652
Abstract: No abstract text available
Text: I N T E G R A T E D C IR C U IT S 87C652 80C51 8-bit microcontroller 8K/256 OTP, l2C Product specification Supersedes data of 1998 Jan 19 IC20 Data Handbook Philips Semiconductors 1998 May 01 PHILIPS Philips Semiconductors Product specification 80C51 8-bit m ic roc o ntro lle r
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87C652
80C51
8K/256
87c652
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Untitled
Abstract: No abstract text available
Text: - PRELIMINARY Not Recommended for New Design February 1996 Edition 3.0 PRODUCT PROFILE SHEET M B FUJITSU 8 1 4 1 0 O D - 6 0 /-7 0 CMOS 4M x 1 BIT FAST PAGE MODE DYNAMIC RAM C M O S 4 , 1 9 4 , 3 0 4 x 1 bit F a s t P a g e M o d e D y n a m i c R A M The Fujitsu MB814100D is a fully decoded CMOS Dynamic RAM DRAM that contains
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MB814100D
048-bits
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scans-048
Abstract: DSAGER00026
Text: 1 Û O I 8 8 H 8 R , H 3 F 3 CSÛ ï - 4B M B 8 0 d * i i e f e & - Q f 40 a&mog ss ; OOûOûi aesm m •'O0OS2 S0HWI m ä a H S O K s “h T ‘ e o e d l f e q ' n a Ä O S iO a h E fO H r a d o p H S B fra d g ; i Œ «OHH8i«SiO H& n)XBHC[0$Bai SBHSBBtlx M8%
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00JIS6
scans-048
DSAGER00026
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