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    Untitled

    Abstract: No abstract text available
    Text: polyfet rf devices L2012 PATENTED GOLD METALIZED General Description SILICON RF POWER MOSFET PACKAGE Silicon DMOS designed specifically for RF applications. Immune to forward and reverse bias secondary breakdown "Polyfet" *"* process features gold metal for greatly extended


    OCR Scan     		L2012 00DDB77 PDF

    PBA FET

    Abstract: CFK2062-P5 CFK2062-P5-000T
    Text: s i m B P H m P rod u ct S p e cifica tio n s D ecem b er 1997 iof4 CFK2062-P5 r 2.3 to 2.5 GHz +30 dBm Power GaAs FET Features □ High Gain □ +30 dBm Power Output □ Proprietary Power FET Process □ >40% Linear Power Added Efficiency □ Surface Mount SO-8 Power Package


    OCR Scan     		CFK2062-P5 CFK2062-P5 PBA FET CFK2062-P5-000T PDF