Untitled
Abstract: No abstract text available
Text: Preliminary SBF-4089 Product Description DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBF-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBF-4089
SBF-4089
DC-500
EDS-103412
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Untitled
Abstract: No abstract text available
Text: Preliminary SBF-5089 Product Description DC-500 MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBF-5089
EDS-103413
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SBA-5086
Abstract: BA5 Amplifier BA5 marking mmic marking L SIRENZA MARKING
Text: SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-5086
SBA-5086
1950MHz
EDS-102742
BA5 Amplifier
BA5 marking
mmic marking L
SIRENZA MARKING
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BA5 marking
Abstract: SBA-5089 marking ba5 BA5 Amplifier class d rf power amplifier
Text: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-5089
SBA-5089
1950MHz
EDS-102743
BA5 marking
marking ba5
BA5 Amplifier
class d rf power amplifier
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SBF-4089
Abstract: AN075 AN-075 SBF-4089Z eel -16
Text: SBF-4089 SBF-4089Z Product Description Sirenza Microdevices’ SBF-4089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz
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SBF-4089
SBF-4089Z
SBF-4089
42dBm
DC-500
AN-075
EDS-103412
AN075
AN-075
SBF-4089Z
eel -16
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N4 MMIC
Abstract: marking n4 mmic
Text: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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NGA-486
NGA-486
EDS-101104
N4 MMIC
marking n4 mmic
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TRANSISTOR BI 187
Abstract: No abstract text available
Text: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4089
SBA-4089
1950MHz
-45dBrati
EDS-102822
TRANSISTOR BI 187
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SBA-4089
Abstract: S1-101 BA433 ba4 transistor
Text: SBA-4089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4089 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4089
SBA-4089
1950MHz
EDS-102822
S1-101
BA433
ba4 transistor
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BA5 Amplifier
Abstract: BA5 marking SBA-5086
Text: Preliminary Data Sheet SBA-5086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5086 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-5086
SBA-5086
EDS-102742
BA5 Amplifier
BA5 marking
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ba4 transistor
Abstract: SBA-4086 ba4 RF amplifier
Text: SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4086
SBA-4086
1950MHz
EDS-102821
ba4 transistor
ba4 RF amplifier
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sba-4086
Abstract: No abstract text available
Text: SBA-4086 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-4086 is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-4086
SBA-4086
EDS-102821
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Untitled
Abstract: No abstract text available
Text: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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NGA-486
NGA-486
EDS-101104
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SBA-5089
Abstract: No abstract text available
Text: SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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SBA-5089
SBA-5089
EDS-102743
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BA5 Amplifier
Abstract: GSM/BA5 Amplifier marking ba5 class d rf power amplifier
Text: Advanced Data Sheet SBA-5089 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process
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SBA-5089
SBA-5089
EDS-102743
BA5 Amplifier
GSM/BA5 Amplifier
marking ba5
class d rf power amplifier
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bf5z
Abstract: SBF-5089 SBF-5089Z AN-075 RF AMPLIFIER marking S2
Text: SBF-5089 SBF-5089Z Product Description Sirenza Microdevices’ SBF-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 0.5 GHz
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SBF-5089
SBF-5089Z
SBF-5089
41dBm
DC-500
AN-075
EDS-103413
bf5z
SBF-5089Z
AN-075
RF AMPLIFIER marking S2
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N4 MMIC
Abstract: TRANSISTOR BI 243 NGA-486 Sirenza Microdevices, Inc amplifier marking n4 N4 Amplifier
Text: NGA-486 Product Description DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier Sirenza Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with
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NGA-486
NGA-486
EDS-101104
N4 MMIC
TRANSISTOR BI 243
Sirenza Microdevices, Inc
amplifier marking n4
N4 Amplifier
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NGA-486
Abstract: No abstract text available
Text: Product Description Stanford Microdevices NGA-486 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases
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NGA-486
NGA-486
EDS-101104
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Untitled
Abstract: No abstract text available
Text: Vk bME J> 72T4b51 m 00Dbm2 CHI IPRX 7720 Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 P h S S B C O tltiO l Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 4 5 q T ^ q A m p e r e s
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72T4b51
00Dbm2
BP107,
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CS299D
Abstract: stepper motor 9v CS-299D CS-299N8 "cherry semiconductor"
Text: CHERRY SEMICONDUCTOR CORP bSE D EDb7SSb 0D0EM71 T l^ • CHE CS-299D Dual Schottky Diode Bridge D escription The CS-299D is an eight-diode array designed for flyback voltage clamping of inductive loads, where high peak current and low dutycycle conditions exist. The dual
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2Db755b
0D0EM71
CS-299D
CS-299N8
CS299D
stepper motor 9v
CS-299N8
"cherry semiconductor"
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