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    LD18 SOT223

    Abstract: transistor wmv 5E SOT223 IJ63 BUK482-100A LD18A
    Text: PHILIPS INTERNATIONAL bSE D • 7110a2b 00b41bcl 4bD « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channei enhancement mode field-effect power transistor in a plastic envelope suitable for surface mount applications.


    OCR Scan     		PDF 7110flSt. ODb417D BUK482-100A OT223 711002b 0Db4174 OT223. 35\im LD18 SOT223 transistor wmv 5E SOT223 IJ63 LD18A

    RS-495

    Abstract: No abstract text available
    Text: DATA SHEET NEC MOS INTEGRATED CIRCUIT 4.75 M-BIT FIELD RAM 270-ROW x 288-COLUMN x 8-BLOCK x 8-BIT D e scrip tio n The juPD487000GC is a random block access, serial read and write Field RAM. The 270-row and 288-column non multiplexed address inputs selects an 8-byte block. The random access time to the 8-byte block is 200 ns. This device


    OCR Scan     		PDF 270-ROW 288-COLUMN uPD487000GC P100GC-50-7EA-2 b427525 00b4173 uPD487000 /iPD487000. RS-495