a2039

Abstract: STP55N06L STP55N06LFI dc motor forward reverse control C5530
Contextual Info: •i 7^5^237 7 7 V # 00MbS3 E 72Ô ■ S G T H _ S G S -T H O M S O N M g^ IH[l T^MO(gS STP55N06 L S T P 5 5 N 0 6 LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V STP55N 06L STP55N 06LFI dss 60 V 60 V Id

Contextual Info: - 3 3 - 1S> RX2731B90W t PHILIPS INTERNATI ON AL ShE D • 7110fl2b 00MbS30 106 PHIN PULSED MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended fo r use in a common-base class-C broadband pulse power amplifier with a frequency range o f 2.7 to 3.1 GHz.