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    28256 eeprom

    Abstract: EEPROM 28256 DS1230Y-200 DALLAS 28256 DS1230 DS1230AB DS1230Y
    Text: DALLAS SEMICONDUCTOR CORP sbimao 3^E D 00G34DS a h d a l - T '^ 'Z 3 -V 7 ” DALLAS SEMICONDUCTOR FEATURES DS1230Y/AB 256K Nonvolatile SRAM PIN DESCRIPTION • Data retention in the absence of Vcc • Data Is automatically protected during the de­ crease in ^cc at power loss


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    PDF DS1230Y/AB 28-pin 100ns, 120ns, 150ns, 200ns DS1230 28256 eeprom EEPROM 28256 DS1230Y-200 DALLAS 28256 DS1230AB DS1230Y