2N3563
Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15
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D0D0S15
2N5088
2N5127
O-106
2N5131
2N5133
2N5209
2N5210
2N3563
2N3638
2N3644
2N3645
2N5132
2N3638A
2N3702
to 106 2n5133
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2N5133
Abstract: to 106 2n5133 2N3638A 2N3563 2N3638 2N3644 2N5088 2N5089 2N5127 2N5131
Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NO ISE LE V E L A M P LIF IE R Cont'd. a Vcb V CE V EB I'F E at •c VCE V V V min max mA V 2N 5088 2 N 5089 2N5127 2N5131 2N5133 30 25 20 20
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2N5088
2N5089
2N5127
O-106
2N5131
2N5133
2N5209
2N5210
to 106 2n5133
2N3638A
2N3563
2N3638
2N3644
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2N3563
Abstract: 2N3645 to 106 2n5133 2N3638 2N3638A 2N3644 2N5133 2N5088 2N5089 2N5127
Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. a Vcb VCE V EB I'FE at •c VCE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15
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OCR Scan
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2N5088
2N5089
2N5127
O-106
2N5131
2N5133
2N5209
2N5210
2N3563
2N3645
to 106 2n5133
2N3638
2N3638A
2N3644
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85040 orga
Abstract: No abstract text available
Text: tJbE D • ISbBbTfl TTWhite Technology, Inc. Vpp C A19C 2 A16C 3 A15C 4 A12 C 5 A7C 6 ^ A 3 C 10 A 2 C 11 25 □ ÖE 24 HA10 A1 C 12 AOC 13 DOC 14 23 I C E 22 J D 7 21 u D6 D1 C 15 D 2 C 16 20 U D5 19 J DA C 17 18 J D3 ■ BUT WF-1024K8-200 31 U A17 30 U A14
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D000S10
WF-1024K8-200
10uSec
17554J
85040 orga
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