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    kt 807

    Abstract: C 6351 G a 6351
    Text: 7 a 6 5 O 4 - 0 .4 1 1 . 0 1 6 1 C A CD 0.22i0.05 .0085i.002 -B- OD -20.50 [.807] X < LO œ — ro cd o +“ MAX m -H L D ao co — LO n —• oc— ^ o . CD rn 1 1 1 1 1 1 L_ J !4.00i0.38 .55U.015 DETAIL G SCALE 10: 4,5 0 - < □ SHIELD r—1 a:


    OCR Scan     		PDF fpoo-0013-98 4feb98 fp0o-o115-97 fpoo-0277-96 0ed96i fpoo-o2o0-96 iisep96 dy/np/0219 29fe896 kt 807 C 6351 G a 6351

    AYN TI W

    Abstract: iGSS 100nA Vgs 0v
    Text: TOSHIBA -CDÏSCRETE/OPTO}- T ì D E 9097250 TOSHIBA CDISCRETE/OPTO SEMICONDUCTOR I TCHVESD 99D 16735 D TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 7 3 TECHNICAL DATA SILICON N CHANNEL MOS TYPE ff-MOSI) INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF TCH72SD 100nA 300uA 20kfi) AYN TI W iGSS 100nA Vgs 0v

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON N CHANNEL MOS TYPE MG50D2DM1 HIGH POWER S W I T C H I N G APPLICATIONS. M OTOR C ONTROL APPLICATIONS. Uni t in mm FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance


    OCR Scan     		PDF MG50D2DM1 0-085il