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    BU 450 bdx

    Abstract: bux81
    Text: TEXAS INSTR COPTO} b5 DFIflTblTab 003bbS7 □ 62C 8 9 6 1 7 2 6 TEXAS INSTR < Ö P T Ü 7 3Ò 657 BUX80 BUX81 N-P-N SILICON POWER TRANSISTORS / ~ J 3 - / 3 OCTOBER 1982 - REVISED OCTOBER 1984 150 W at 2 5 ° C C ase Temperature 10 A Continuous Collector Current


    OCR Scan     		003bbS7 BUX80 BUX81 T-33-/3 BU 450 bdx PDF

    bux81

    Abstract: BUX80
    Text: TEXAS INSTR {OPTO} 6961726 TE X A S b5 IN S TR DE IflTblTab 003bbS7 □ 62C <OPTO 3Ò657 BUX80, BUX81 N-P-N SILICON POWER TRANSISTORS /- 7 3-/3 O CTO BE R 1 9 8 2 - R EVISED O C T O B E R 198 4 1 5 0 W a t 2 5 ° C C ase T em p eratu re 1 0 A Continuous C ollector C urrent


    OCR Scan     		003bbS7 BUX80 BUX81 BUX80, BUX81 T-33-/3 PDF

    KM6161000BLT5L

    Abstract: No abstract text available
    Text: KM6161000B Family CMOS SRAM 64K x16 bit Low Power CMOS Static RAM FEATURES SUMMARY GENERAL DESCRIPTION The KM6161000B family is fabricated by SAMSUNG'S advanced CMOS process technology. The family can support various operating temperature ranges and has various package


    OCR Scan     		KM6161000B 44-TSOP D03bbbb KM6161000BLT5L PDF