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Untitled Abstract: No abstract text available Text: Advanced Power MOSFET SFM 9214 FEATURES BVdss = -250 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ ■ ■ ■ ^DS on = Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 nA (Max.) @ VDS= -250V	OCR Scan	PDF	-250V OT-223 SFM9214 003b323
SFM9120 Abstract: N -Channel power Sot 6 Text: SFM9120 Advanced Power MOSFET FEATURES B V dss = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = -1.7 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10	OCR Scan	PDF	SFM9120 -100V OT-223 OT-23 OT-89 S0T-223 003b323 SFM9120 N -Channel power Sot 6
diode sy 345 Abstract: t04 sot 23 IRLM014A t04 sot-23 t04 mosfet Text: IRLM014A Advanced Power MOSFET FEATURES BVdss = 60 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on ■ Lower Input Capacitance lD = 2.8 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 \|iA (Max.) @ VDS = 60V	OCR Scan	PDF	IRLM014A OT-223 OT-23 OT-89 S0T-223 003b323 diode sy 345 t04 sot 23 IRLM014A t04 sot-23 t04 mosfet
Untitled Abstract: No abstract text available Text: IRLM210A Advanced Power MOSFET FEATURES b v dss = 200 V • Avalanche Rugged Technology 1.5 Î2 ■ Rugged Gate Oxide Technology ^DS on — ■ Lower Input Capacitance lD = 0.77 A ■ Improved Gate Charge ■ Extended Safe Operating Area SO T-223 ■ Lower Leakage Current : 10 \|iA (M ax.) @ VDS = 200V	OCR Scan	PDF	IRLM210A T-223 0D311Ã 003b323
Untitled Abstract: No abstract text available Text: SFM9210 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology = 3.0 ■ Rugged Gate Oxide Technology ^DS on lD = -0.5 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA (Max.) @ VDS = -200V	OCR Scan	PDF	SFM9210 -200V OT-223 7Tb4142 003b323
Untitled Abstract: No abstract text available Text: IRLM120A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10pA Max. @ VDS= 100V ^D S (on) = 0 -2 2 ß	OCR Scan	PDF	IRLM120A OT-223 003b323
Untitled Abstract: No abstract text available Text: 47E » S IE M E N S • ö23SbüS 0D3t300 ö ■ S I E G SIEMENS7 AKTIENG ESEL LSCH AF ISDN Burst Tranceiver Circuit IBC Preliminary Data _ 1 - 7 . 5-/5 PEB 2095 CMOS 1C Type Ordering Code Package PEB 2095-C PEB 2095-N PEB 2095-P Q67100-H8398 Q67100-H8396	OCR Scan	PDF	0D3t300 2095-C 2095-N 2095-P Q67100-H8398 Q67100-H8396 Q67100-H8397 C-DIP-24 PL-CC-28 P-DIP-24
irlm110 Abstract: No abstract text available Text: IRLM110A Advanced Power MOSFET FEATURES b v dss = 100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^D S on = ■ Lower Input Capacitance lD = 1.5 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 pA (Max.) @ VDS = 100V	OCR Scan	PDF	IRLM110A OT-223 7Tbm42 0Q3T17G 003b323 irlm110
Untitled Abstract: No abstract text available Text: SFM9120 Advanced Power MOSFET FEATURES b v dss = -100 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = ■ Lower Input Capacitance lD = -1.7 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10	OCR Scan	PDF	-100V SFM9120 OT-223 003b323