TCA2365
Abstract: A235L Z/Tda 7923
Text: M7E Û235b05 D SIEMENS it 003513b S I SIEG AKTIENGESELLSCHAF TCA 2365 Dual Power Operational Amplifier Bipolar 1C Features • • High output peak current of twice 2.5 A Wide supply voltage range, 8 V to 32 V • • • Outputs entirely protected DC short-circuit proof
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235b05
003513b
Q67000-A1876
Q67000-A8017
P-DIP-18-L-9
P-DIP-18L-9
fi23SbOS
T-79-23
IED0051
TCA2365
A235L
Z/Tda 7923
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Untitled
Abstract: No abstract text available
Text: < £ Z i I ß Technical Manual G November 1989 Z80180 Z180 MPU FEATURES: • • • • • • Operating Frequency to 10 MHz On-Chip MMU Supports Extended Address Space Two DMA Channels On-Chip Wait State Generators Two UART Channels Two 16-Bit Timer Channels
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Z80180
16-Bit
Z80180
10MHz
Z8018008PSC
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am79C970A Advanced Micro Devices PCnet -PCI II Single-Chip Full-Duplex Ethernet Controller for PCI Local Bus Product DISTINCTIVE CHARACTERISTICS • Single-chip Ethernet con tro ller fo r the Periph eral Component Interconnect PCI local bus
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Am79C970A
10BASE-T
PQB132
oooooofloooofl00D
16-0000038-PQB-1
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km44v4104bk
Abstract: KM44C4104
Text: K M 4 4 V 4 10 4 B K CMOS D R A M ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44V4
KM44V4104BK
DD3514L
7Tb4142
D03S147
km44v4104bk
KM44C4104
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PAL24V10
Abstract: No abstract text available
Text: COM’L: H-15/25 ry Advanced Micro Devices PALCE24V1 OH-15/25 EE CMOS 28-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS • Electrically erasable CMOS technology provides reconfigurable logic and full testability ■ High speed CMOS technology
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H-15/25
PALCE24V1
OH-15/25
28-Pin
12222E-15
025752b
PAL24V10
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NPN Silicon Epitaxial Planar Transistor
Abstract: IEC134 MZ0912B100Y TACAN
Text: Philip»Componant» Data sheet oc I •talus Prefimìrtaiy specification dele of Is m m July 1900 MZ0912B100Y NPN silicon planar epitaxial microwave power transistor FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high emitter efficiency. • Diffused emitter ballasting
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MZ0912B100Y
NPN Silicon Epitaxial Planar Transistor
IEC134
MZ0912B100Y
TACAN
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