100-P
Abstract: BUK456 BUK456-60A BUK456-60B T0220AB dm 369 rv
Text: N AMER PHILIPS/DISCRETE bTE D bbSBTBl 0030b7D LET • APX Product Specification Philips Semiconductors B U K456-60A/B PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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K456-60A/B
BUK456
T0220AB
BUK456-60A/B
100-P
BUK456-60A
BUK456-60B
T0220AB
dm 369 rv
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Untitled
Abstract: No abstract text available
Text: N AHER PHILIPS/DISCRETE bTE D ^53=531 0030b7D Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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0030b7D
-TO220AB
BUK456-60A/B
BUK456
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qml-38535
Abstract: CDFP2-F14 CQCC1-N20 GDFP1-F14
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A REV 1 SHEET 2 3 4 5 6 7 8 9 10 11 12 13 PREPARED BY DEFENSE SUPPLY CENTER COLUMBUS Joseph A. Kerby STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE
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0030t
qml-38535
CDFP2-F14
CQCC1-N20
GDFP1-F14
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