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Contextual Info: N ANER PHILIPS/DISCRETE bTE D bb53T31 DQ3DSbD fiTT * A P X Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in |
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bb53T31 OT186 K445-200A/B BUK445 -200A bbS3T31 00305fci4 BUK445-200A/B 1E-01 |