2N6070 MOTOROLA

Abstract: 2N6070 2N6074 2N6069 2n6070 triac 2N6068 2N6072 triac 2n6073 triac 2N6070 2N6073 motorola
Contextual Info: 3M MOTOROLA SC -CDIODES/OPTO} 6367255 M O T O R OL A SC DE|b3t ,7H SS 0030157 S D IO D E S /O P T O 34C 38157 T - Z fJ f - O ' SILICON THYRISTOR DIE (continued) 2C6075 CHIP NO. LINE SOURCE — DTL0401 Device assembled from this die type are similar to or

2N6164

Abstract: 2N6161 2N6165 2N6162 2n6163
Contextual Info: 34 M OT O RO L A SC - C D I O D E S / O P T O J "5367255 MOTOROLA SC D Ë T | b 3h 72S S 003015^ t, <D I O D E S / O P T O 34C t 38159 - i r * ty SILICON THYRISTOR DIE continued) 2C6165 CHIP NO. LINE SOURCE — DTL0430 Device assembled from this die type are similar to or

Contextual Info: Philips Sem iconductors 0030155 flO fl UHF push-pull power MOS transistor B i APX Product specification BLF546 N ANER PHILIPS/DISCRETE bRE » PIN CONFIGURATION FEATURES • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

MEC 1300

Abstract: GI 312 NDL5300 NDL5302 NDL5302L1 NDL5302L2 NDL5310 NDL5312 NDL5314 gi diode
Contextual Info: N E C ELECTRONICS INC b2E D • b4E7S55 0030153 4flb « N E C E DATA SHEET NEC LIGHT EMITTING DIODE NDL5302L2 ELECTRON DEVICE 1 3 0 0 nm O P TICA L F IB E R COM M UN ICATIO N S InGaAsP LIG H T EM ITTING D IO D E DESCRIPTION N D L5302L2 is an InGaAsP double heterostructure 1 300 nm LE D . It is designed for medium distance optical fiber communi­

AC15A

Abstract: TRIAC FT 12 thyristor FT 12 2N5570 triac Motorola Discrete Thyristor Chip 2N5571
Contextual Info: MOTOROLA SC i DIODES/O PTO ï 6367255 MOTOROLA SC 34 D E § b3t>7555 0030155 1 DIODES/OPTO 34C 38155 T * SILICON THYRISTOR DIE (continued) 2 s'-z'dr 2C5574 CHIP NO. LINE SOURCE — DTL0420 Device assembled from this die type are similar to or better than the following device types:

Contextual Info: S5 E D Æ 7 • Traisa? 0030154 ^ 0 4 » s g t h T - H ù - 2 3 -lO S C S -T H O M S O N M D » I[L [IO T G M M 6 2 4 2 5 6 VERY FAST CMOS 1 Megabit 256K x 4 SRAM WITH OUTPUT ENABLE S G S- TH 0 nS 0 N ~ ■ 256K x 4 CMOS FAST SRAM WITH OUTPUT ENABLE ■ EQUAL CYCLE AND ACCESS TIMES:

L53 led

Abstract: L-53-12
Contextual Info: N E C ELECTRONI CS I NC b2E D • b 4 S7 S25 0030153 4 öb « N E C E DATA SHEET NEC LIGHT EMITTING DIODE N DL5302L2 ELECTRON DEVICE 1 3 0 0 nm OPTICAL FIBER COMMUNICATIONS InGaAsP LIGHT EMITTING DIODE DESCRIPTION N D L5302L2 is an InGaAsP double heterostructure 1 300 nm LED. It is designed for medium distance optical fiber communi­

in5333

Abstract: IN5388 DZU 41 IN5333 motorola in538 1C5366 1C3016
Contextual Info: MOTOROLA f SC -CDIODES/OPTO} 6367255 MOTOROLA S C 34 D E^j b3Lj7E5S 34 c <D I O D E S / O P T O 0030151 38121 7~f/~0'5 SILICON ZENER D50DE DICE continued) 1C3016 CHIP NO. — SERIES LINE SOURCE— DZD900 CURRENT REGULATOR DIODE Device assembled from this chip type are similar to or better

CI 556

Abstract: cb242 transistor 123 DL itt 2222 CB243 ITT 2222 A TRANSISTOR BO 341 BLF546 UBB930 MCB-24
Contextual Info: Philips Semiconductors f c ib S B 'Ì B I 0030155 flO f l H i APX Product specification UHF push-pull power MOS transistor _ BLF546 N AMER P H I L I P S / D I S C R E T E FEATURES bTE » PIN CONFIGURATION • • • • High power gain Easy power control

STV0030

Abstract: J171 J172 PQFP64 152-MHz FM DEMODULATOR 25V6K
Contextual Info: STV0030 SATELLITE SOUND AND VIDEO PROCESSOR . . . . . . . . . . TWO INDEPENDENTLY PROGAMMABLE SOUND DEMODULATORS PLL DEMODULATION WITH 5-9MHz FREQUENCY SYNTHESIS 50/75µs, J17 OR NO DE-EMPHASIS PROGRAMMABLE OPTIONS DYNAMIC NOISE REDUCTION SYSTEM FIXED LEVEL AUXILIARY AUDIO INPUTS

Inter-ICs

Abstract: chn 940 S1C33L01 1431T dot led display large size with circuit diagram YUV411 i781symbol LUT43 S1C33L19 786LCD
Contextual Info: S1C33L19 Technical Manual CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33L19 Technical Manual S1C33L19 Technical Manual SEMICONDUCTOR OPERATIONS DIVISION EPSON Electronic Devices Website http://www.epson.jp/device/semicon_e Document code: 411664200 April 2009 in JAPAN D

S1C33L17

Abstract: S1C33L17D S1C33L17F Inter-ICs dot led display large size with circuit diagram LOT code stmicroelectronics S1C33L01 S1C33L17B 2451c BT 342 project
Contextual Info: S1C33L17 Technical Manual CMOS 32-BIT SINGLE CHIP MICROCOMPUTER S1C33L17 Technical Manual S1C33L17 Technical Manual SEMICONDUCTOR OPERATIONS DIVISION EPSON Electronic Devices Website http://www.epson.jp/device/semicon_e Document code: 411520600 Fist issue June, 2008 C B

BTI ML-1 94V-0

Abstract: 94V-0 BTI ML-1 BTI ML-2 94V-0
Contextual Info: I . I Bulletin 127093 rev. A 09/97 International ir k .f i 52. s e r ie s iQRRectifier FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules Features 150 A • F a st tu rn -o ff th y ris to r ■ Fa st re c o v e ry dio d e ■ H ig h su rge c a p a b ility

thyristor BT 161

Contextual Info: I . I Bulletin127092 rev. A 09/97 International IG R Rectifier ir k .f i 32. s e r i e s FAST THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 130 A Features • Fast turn-off thyristor ■ Fast recovery diode ■ H igh surge capability

Contextual Info: Philips S em iconductors bbSHTBl Q0301Mb ATS M APX Product specification UHF push-pull power MOS transistor — •— BLF545 N AMER PHILIPS/DISCRETE FEATURES b^E D _ PIN CONFIGURATION • High power gain • Easy power control • Good thermal stability • Gold metallization ensures

Contextual Info: Z86E73/E74/L73/L74 CP95LV00801 P R E L I M I N A R Y PRELIMINARY Custom er Pr o curem ent Spe c ific atio n Z86E73/E74 32K OTP Z86L73/L74 32K ROM In f r a r e d r e m o t e Co n t r o l l e r s FEATURES ROM Kbyte Part Z86E73 Z86L73 Z86E74 Z86L74 32 32 32

Contextual Info: Preliminary KM68FU2000, KM68FS2000, KM68FR2000 Family CMOS SRAM 256Kx8 bit Super Low Vcc High Speed CMOS Static RAM FEATURE SUMMARY GENERAL DESCRIPTION • Process Technology : 0.4 um Full CMOS The KM68FU2000, KM68FS2000 and KM68FR2000 • Organization : 256K x 8

Contextual Info: 3QE D • 7^5^537 SCS-THOMSON 00301SM EILKgMMtgS T ■ s 6 s-fHonioN BUZ32 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils METALLIZATION: Top Al Back A u /C r/N i/A u BACKSIDE THICKNESS: 6100 A DIETHICKNESS: 16 ± 2 mils

TLC16C552

Abstract: QML-38535 TLC16C552AMHV TL16C552AM
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 17 REV STATUS OF SHEETS PM 1C N/A 18 19 20 21 22 23 24 25 26 1 2 3 4 5 6 REV SHEET PREPARED BY Dan Wonnell STANDARD MICROCIRCUIT DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS

RX 3E

Abstract: RX-3E 8 Radio Corporation of America 252B marking LT 5216 1965-REVISED rca RX- 3E sur 288 SRDL oa 1160
Contextual Info: CORPORATION OF A M E R I C A . ELECTRONIC DATA PROCESSING PROCESSORS @ VU incui inumi RADIO REFERENCE MANUAL R A D I O C O R P O R A T I O N 70-35-601 March 1966 OF A M E R I C A The information contained herein is subject to change without notice. Revisions may be

Contextual Info: Us e r ’s M anual C h apter 5 S e r ia l M o d e s and Protocols 5.1 INTRODUCTION The main advantage of USC family members is that they can comm unicate in many different modes and serial protocols. This, in turn, makes for more flexible and ca­ pable products for Z ilog’s customers. This chapter de-

Contextual Info: TOSHIBA TMP47E186/187 CMOS 4-Bit Microcontroller TMP47E186M / TMP47E187M TM P47E186M/187M is a high-speed, advanced single-chip 4-bit m icrocom puter w ith built-in ROM , RAM , E2PROM , SPI, I/O ports, a tim er/co u n ter. Model TMP47E186M TMP47E187M RAM ROM

tms 1601

Abstract: mte maxim um1233 Omron Cross Reference HONEYWELL MODULATOR MOTOR Allen Bradley SLC500 PLC siemens s5 100u plc manual FR-U1205 scr regulator emergency light RS7660
Contextual Info: Discontinued and Superseded Data Sheet History. This document contains Discontinued and Superseded Data Sheet History. The information is listed in the following format: Data Sheet Number: The original RS data Sheet Number of the item. Brief Description: The Title of the Data Sheet.

Contextual Info: Or, Call Customer Service at 1-800-548-6132 USA Only BURR- BROW Nt E OPA124 1 % FEATURES APPLICATIONS • • • • • • • • • • • LOW NOISE: 6nV/Vflz (10kHz) LOW BIAS CURRENT: 1pA max LOW OFFSET: 250|xV max LOW DRIFT: 2jiV/°C max HIGH OPEN-LOOP GAIN: 120dB min