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    002T4 Search Results

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    002T4 Price and Stock

    STMicroelectronics SPV1002T40

    DIODE GEN PURP 40V 16A TO220
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    DigiKey SPV1002T40 Tube
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    TE Connectivity ES-2002-T412-030J

    SWITCH ESTOP TWIST RESET 10A 32V
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    DigiKey ES-2002-T412-030J Bulk 50
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    • 100 $118.0752
    • 1000 $118.0752
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    Newark ES-2002-T412-030J Bulk 50
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    • 100 $130.45
    • 1000 $130.45
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    TTI ES-2002-T412-030J Each 50
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    • 100 $115.58
    • 1000 $115.58
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    Master Electronics ES-2002-T412-030J
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    • 100 $100.5
    • 1000 $100.5
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    Glenair Inc 340KS002T40-2N

    Connector Accessories Sealed Shorting Cap Backshell Straight Cadmium Over Nickel - Bulk (Alt: 340KS002T40-2N)
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    Avnet Americas 340KS002T40-2N Bulk 1
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    Glenair Inc 360AS002T4016M8

    Connector Accessories Straight Direct Coupling-Low Profile Non-Environmental Backshell with Strain Relief Olive Drab Cadmium Over Electroless Nickel 40 Shell Size - Bulk (Alt: 360AS002T4016M8)
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    Avnet Americas 360AS002T4016M8 Bulk 1
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    Glenair Inc 550T002T4R6H1L

    Environment Resisting EMI/RFI Split Backshell with Strain Relief for D-Subminiature Connectors DC Shell Size Straight Aluminum - Bulk (Alt: 550T002T4R6H1L)
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    Avnet Americas 550T002T4R6H1L Bulk 3 Weeks 1
    • 1 $725.25
    • 10 $394.9738
    • 100 $154.2608
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    Mouser Electronics 550T002T4R6H1L
    • 1 $644.75
    • 10 $360.75
    • 100 $274.78
    • 1000 $274.78
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    Newark 550T002T4R6H1L Bulk 1
    • 1 $967
    • 10 $541.06
    • 100 $301.6
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    Interstate Connecting Components 550T002T4R6H1L
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    002T4 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    by448

    Abstract: No abstract text available
    Text: A £ G CORP 17E D 002T45Ì3 QGQT773 S • BY 448 •BY 458 TTSILIipililiKjKliifl electronic Creative Technologies 7- o b i s ' Silicon M esa Diodes A p p lica tio n : High voltage rectifier Features: • Hermetically sealed package • Glass passivated junction


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    PDF 002mat 0G0T773 100-pA fithJAs100K/W by448

    aeg d 188

    Abstract: aeg d 188 s 1000 ir 0588 DIN 4154 BR135
    Text: A E G CORP 17E D 002T42b OOCHflT? 1 1N 4154 S electronic CreativeTechnotogies Silicon Epitaxial Planar Diode A p p lica tio n s: Extreme fast switches D im en sio n s In m m ottoe Cathode \ -I I - II- 11 <3.9 1 >26 g<tfl / *<0.65 • »


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    PDF rLS25Â aeg d 188 aeg d 188 s 1000 ir 0588 DIN 4154 BR135

    Untitled

    Abstract: No abstract text available
    Text: 0029426 A E G CORP 01 DE|002T42I d □OQS'lVD T | A 618 S Typenreihe/Type range A618S Elektrische Eigenschaften Electrical properties Höchstzulässige Werte Periodische VorwärtsSpitzensperrspannung Periodische RückwärtsU rrm Spitzensperrspannung Rückwärts-Stoßspitzenspannung


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    PDF SC17D A618S 153D4

    ir 0588

    Abstract: LL4150
    Text: A E G CORP 17E D 002T42b 000=1071 5 LL4150 TTECLESIFDJjKllrStMiK! electronic Creative Technolog >es T-03-01 Silicon Epitaxial Planar Diode Application: High speed switch Dimensions in mm Term inals are tin plated C ath o d e Glass case SO D 80 MiniMELF Weight max. 0.1 g


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    PDF G02T42b 11LIPMK LL4150 mmx50 G0Q1fl72 LL4150 T-03-09 ir 0588

    BYV63

    Abstract: Telefunken diode color code aeg rectifier BW61 BYV61 aeg telefunken
    Text: A E G CORP 17E D 002=i42b □G G ' i f i 3 S 1 • BYV 61 •BYV 62 •BYV 63 ITilLiiFttllliSKlliil electronic Creative Technologies T^es-IS' Silicon M esa Diodes Applications: Very fast rectifier and switch for example for switch mode power supply Features:


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    PDF G02cmab fithJAS65K/W G05T4at -T-63-/S BYV63 Telefunken diode color code aeg rectifier BW61 BYV61 aeg telefunken

    Untitled

    Abstract: No abstract text available
    Text: PD- 9.1577A International Rectifier IGR IRG4PH40KD PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc=10MS, V c c = 720V , T j = 125°C,


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    PDF IRG4PH40KD

    Untitled

    Abstract: No abstract text available
    Text: N-CHANNEL POWER MOSFETS SSD2101 FEATURES • • • • • • • 8SOIC Lower R d s o n Improved inductive ruggedness Fast sw itching tim es Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF SSD2101

    AMD am3 socket pinout

    Abstract: amd socket am3 pinout AMD 140 Socket AM3 amd pinout diagram socket AM3 MR 4710 AMD Socket AM3 amd AM3 PIN LAYOUT MR 4710 IC OO3A MARKING AMD socket AM3 pin diagram
    Text: ADV MI CRO PLA/PLE/ARRAYS COM’L SÛE 02S7S2b D 0 0 8 =1 4 4 3 3 B A MDS MIL E T—46— 19-13 Advanced Micro Devices PAL20R8 Family 24-pin TTL Programmable Array Logic DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay Easy design w ith PALASM softw are


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    PDF PAL20R8 24-pin 24-pln 28-pin PAL20L8, PAL20R8, PAL20R6, PAL20R4) AMD am3 socket pinout amd socket am3 pinout AMD 140 Socket AM3 amd pinout diagram socket AM3 MR 4710 AMD Socket AM3 amd AM3 PIN LAYOUT MR 4710 IC OO3A MARKING AMD socket AM3 pin diagram

    B45A

    Abstract: AEG motor buv 71 aeg d 188 aeg d 188 s 1000 aeg t 188
    Text: A E G CORP □02142^ QDCH571 4 17E D BUV 71 TIlI3J^FE£&sSI30 e le c tro n ic Crearve Technologies •p -*V J 3 Silicon NPN Power Transistors Applications: Motor controls, switching mode power supplies Features: • Implantation High reverse voltage • Triple diffusion


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    PDF QD0T571 T-33-13 B45A AEG motor buv 71 aeg d 188 aeg d 188 s 1000 aeg t 188

    IRLZ44

    Abstract: 250M IRLZ30 IRLZ34 IRLZ40 004I1
    Text: N-CHANNEL LOGIC LEVEL MOSFET IRLZ44/40 FEATURES • • • • • • • • Lower R d s o n Excellent voltage stability Fast switching speeds Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF IRLZ44/40 O-22O IRLZ44 IRLZ40 IRLZ34 IRLZ30 -Vos-30V Vpg-48V 002T4D5 250M 004I1

    Untitled

    Abstract: No abstract text available
    Text: DALLAS SEMICONDUCTOR PRELIMINARY DS21Q42 Enhanced QUAD T1 FRAMER FUNCTIONAL DIAGRAM FEATURES • FourTl DS1/ISDN-PRI/J1 framing transceivers • All four framers are fully independent • Each of the four framers contain dual twoframe elastic store slip buffers that can connect


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    PDF DS21Q42 64-byte 00E1bD2

    Untitled

    Abstract: No abstract text available
    Text: P-CHANNEL POWER MOSFETS SSD2108 FEATURES 8SOIC • L o w e r R ds <on • • • • • • Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


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    PDF SSD2108 002T473 to150â

    MAE A1470

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 3ÖE 0 • Ü5S7S2Ö ODSTMSÖ 0 ■ A MD 4 '-* 4 6 -1 2 -2 ? Advanced Micro Devices Am27C256 32,768 X 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tlme-S5 ns ■ JEDEC-approved pinout ■ Low power consumption: -100 nA maximum standby current


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    PDF Am27C256 128K-bit, 003Q2bL> MAE A1470

    T 4148

    Abstract: n4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288
    Text: A E G CORP 17E D TTSUHFIUMìSIIIiO electronic CtealcveTechna'ogies o a a m a t a o c n a a i 5 • 1 N 4148 - 1 N 4 1 4 9 - 1 N 4446 1 |M 4447 • 1 N 4 44 8 -1 N 4449 Silicon Epitaxial Planar Diodes A pplication s: Extreme fast switches Features: • •


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    PDF 002T42b N4148 DIN41 -T-03 2c142b T 4148 N 4148 Diode N4148 diode 4149 1N4148 1n 4148 diode 4446 T03B 95288

    pal 007a

    Abstract: OO3A MARKING PAL 002a pal 005a PAL 006A 20L8 PAL20L8 PAL20R4 PAL20R6 PAL20R8
    Text: ADV MICRO PLA/ PLE/ ARRAYS E M ffiW B i COM’L SÛE D Bi G2S7S2b 008=1443 3 B A M D 2 MIL . T—4 6 —1 9 - 1 3 7 1 ^ PAL20R8 Family AdvaS 24-pin TTL Programmable Array Logic Devices DISTINCTIVE CHARACTERISTICS • As fast as 7.5 ns maximum propagation delay


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    PDF PAL20R8 24-pin 28-pin PAL20L8, PAL20R8, PAL20R6, PAL20R4) pal 007a OO3A MARKING PAL 002a pal 005a PAL 006A 20L8 PAL20L8 PAL20R4 PAL20R6

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIS M 5 M 4 S 1 6 S 2 1 C T P -7 ,- 8 , - 1 0 16777216-BIT 2-BANK x 2Q97152-WORD BY 4-BIT SYNCHRONOUS DYNAMIC RAM some DESCRIPTION The M5M4S16S21CTP is a 2-bank x 2097152-word by 4-bit PIN CONFIGURATION (TOP VIEW) Synchronous DRAM, with SSTL* 1 interface. All inputs and out


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    PDF 16777216-BIT 2Q97152-WORD M5M4S16S21CTP 2097152-word M5M4S16S21CTP-8 150MHz 125MHz M5M4316S21CTP-10 100MHz

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TO SHIBA CIRCUIT TECHNICAL TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT TC74AC1 39P/F/FN/FS DATA SILICON MONOLITHIC DUAL 2 - T O - 4 LINE DECODER The TC74AC139 is an advanced high speed CMOS 2 - to - 4 LINE DECODER fabricated with silicon gate and double layer metal wiring C2MOS technology.


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    PDF TC74AC1 39P/F/FN/FS TC74AC139 16PIN 16PIN 23TYP TCH72

    LD011

    Abstract: No abstract text available
    Text: m i c r o e l e c t r o n i c s group Advance Data Sheet November 1997 Lucent Technologies Bell Labs Innovations Ambassador T8100 H.100/H.110 Interface andTime-Slot Interchanger 1. Product Overview • Programmable switching between local time-slots and H.100 bus, up to 256 connections


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    PDF T8100 100/H AmbassadorT8100 LD011

    Untitled

    Abstract: No abstract text available
    Text: ADV MI CRO PLA/PLE/ARRAYS 2öE D 1 Ë E ÎS I1 1 I COM’L: H-10/15/25, Q-15/25 P A L C E 1 6 V 8 02S7SEb o o s m u IAMDS 1 MIL: H-20/25 T -4 6 -T 9 -0 7 Advanced Micro Devices EE CMOS 20-Pin Universal Programmable Array Logic DISTINCTIVE CHARACTERISTICS •


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    PDF H-10/15/25, Q-15/25 02S7SEb H-20/25 20-Pin 20-pln PALCE16V8

    thyristor aeg

    Abstract: aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200
    Text: A E G CORP 17E D • GOa'iMSb 000=1313 4 Powerblocks für netzgeführte Stromrichter Power modules for line commutated converters Modules surmoulés pour applications secteur é zté -o l I - - « r- a 3 TT.N - Vollgesteuerte Kompaktbaustelne/Fully controlled power modules/Modules surmoulés à 2 thyristors


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    PDF DT18N 75VDRM 00V/ns thyristor aeg aeg powerblock tt aeg powerblock tt 32 n thyristor AEG t 10 n 600 aeg thyristor aeg powerblock td aeg tt 18 n 1200 aeg tt 46 n 1200 AEG DD 65 N 1200 K AEG DD 31 n 1200

    transistor BU 102

    Abstract: transistor application transistor K 903 T-33-13 br 903 t33-13 ZC125 AEG v 300
    Text: A E G CORP 1?E D □ Q S T HS t a QGGTSQB T BU 903 electronic CreatviTechnotogies T- 33-13 Silicon NPN Power Transistor Application: Switching mode power supply Features: • In triple diffusion technique • Short switching time • Glass passivation • Power dissipation 125 W


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    PDF T-33-13 transistor BU 102 transistor application transistor K 903 T-33-13 br 903 t33-13 ZC125 AEG v 300

    Untitled

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b^E » • bbS3^31 DQ2T4fl2 fiTb * A P X BLW 89 U.H.F. PO W ER T R A N SIS T O R N-P-N silicon planar epitaxial transistor suitable for transmitting applications in class-A, B or C in the u.h.f. and v.h.f. range for a nominal supply voltage of 28 V. The transistor is resistance stabilized and


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    PDF 002T4ff

    BLW 82

    Abstract: No abstract text available
    Text: N AMER PHILIPS/DISCRETE b'lE » bb53T31 QQ2T4MT 374 J APX DLVVO O V H.F./V.H.F. POWER TRANSISTOR N-P-N silicon planar epitaxial transistor intended fo r use in class-A, B and C operated mobile h.f. and v.h.f. transmitters with a nominal supply voltage of 12,5 V. The transistor is resistance stabilized and


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    PDF bb53T31 BLW 82

    Untitled

    Abstract: No abstract text available
    Text: ; Or Call Customer Service at 1-800-548-6132 USA Only BURR - BROWN SHC5320 * FEATURES DESCRIPTION • • • • • • • The SHC5320 is a bipolar monolithic sample/hold circuit designed for use in precision high-speed data acquisition applications.


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    PDF SHC5320 SHC5320 350ns 14-pin 16-pin SHC532Q 17313bS