Untitled
Abstract: No abstract text available
Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/38T-A
R01DS0081EJ0100
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R5F21368snfp
Abstract: 06B2D 0025DH 00285H
Text: Datasheet R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/36T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/36T-A
R01DS0055EJ0100
R8C/36TA
R5F21368snfp
06B2D
0025DH
00285H
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06B2D
Abstract: 0029E 000E8H 002C1H 0028b 0027AH 0025DH 00285H 06B13
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0001 Rev.0.01 Feb 23, 2011 Overview 1.1 Features The R8C/38T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides
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R8C/38T-A
R01DS0081EJ0001
R8C/38TA
06B2D
0029E
000E8H
002C1H
0028b
0027AH
0025DH
00285H
06B13
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06B2D
Abstract: p9530 0023AH 0025DH 00285H
Text: Datasheet R8C/38T-A Group RENESAS MCU 1. R01DS0081EJ0100 Rev.1.00 Dec 09, 2011 Overview 1.1 Features The R8C/38T-A Group of single-chip microcontrollers MCUs incorporates the R8C CPU core, which provides sophisticated instructions for a high level of efficiency. With 1 Mbyte of address space, the CPU core is capable of
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R8C/38T-A
R01DS0081EJ0100
R8C/38TA
06B2D
p9530
0023AH
0025DH
00285H
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R5F21368snfp
Abstract: R5F21368 r5f2136csnfp 0025DH 00285H
Text: Preliminary Datasheet Specifications in this document are tentative and subject to change. R8C/36T-A Group RENESAS MCU 1. R01DS0055EJ0001 Rev.0.01 Jan 28, 2011 Overview 1.1 Features The R8C/36T-A Group single-chip microcontrollers MCUs incorporate the R8C CPU core, which provides
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R8C/36T-A
R01DS0055EJ0001
R8C/36TA
R5F21368snfp
R5F21368
r5f2136csnfp
0025DH
00285H
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M66253FP
Abstract: No abstract text available
Text: bSH^öES 0024b30 433 BSHIT1 5K BYTE X 2 FIFO MEMORY I SEMICONDUCTOR TWO BUILT-IN 5K BYTE FIFO MEMORY CIRCUITS HIGH-SPEED FIFO MEMORY SUITABLE FOR DIGITAL PLAIN-M PER COPIERS Ne w s M66253FP The M 66253FP is designed to operate at higher speeds than the conventional
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0024b30
M66253FP
66253FP
45WmtnttdtfrSSOP1
5120x8
M66253FP
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Transistor AC 187
Abstract: AC 187 npn transistor TO 1 187 transistor npn
Text: • Philips Semiconductors bb53T31 0024bfll 175 HIAPX N AMER PHILIPS/DISCRETE Product specification b?E ]>' NPN 1 GHz wideband transistor BF747 PINNING FEATURES • Stable oscillator operation PIN DESCRIPTION Code: E15 • High current gain • Good thermal stability.
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bb53T31
0024bfll
BF747
Transistor AC 187
AC 187 npn transistor TO 1
187 transistor npn
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transistor T43
Abstract: No abstract text available
Text: Philips Semiconductors bbSS'Ol 0024b4fl T43 H A P X N AUER PHILIPS/DISCRETE NPN 1 GHz wideband transistor DESCRIPTION Preliminary specification fc,7E D BF547W PINNING Silicon NPN transistor in a plastic SOT323 S-mini envelope. It is primarily intended as a mixer,
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0024b4fl
BF547W
OT323
BF547W
BF547.
MBC870
OT323.
transistor T43
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MSM66101
Abstract: MSM66G101VS
Text: O K I Semiconductor MSM66101 OLMS-66K Series 16-Bit Microcontroller GENERAL DESCRIPTION Tlic MSM66I01 is a high performance microcontroller that em p loys OKI original nX -8/lU 0 CPU core. This chip consists o f a 16-bit ALU, 12K bytes of m ask program ROM, 384 bytes of data RAM,
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MSM66101
OLMS-66K
16-Bit
MSMWSI01
nX-8/100
10-bit
DD245M1
MSM66101
MSM66G101VS
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M7707
Abstract: rd201 PLD-10 imv D6-11 BV 726 C 1 Converter w5753 fd187 sGCT function PR 161A RD202
Text: O K I Semiconductor MSM7707 Baseband integration LSI device for PHS GENERAL DESCRIPTION The MSM7707 is an LSI device with an ADPCM CODEC function, jt/4 shift QPSK modulation/ demodulation function and a TDMA-TDD function required for PHS Personal Handy phone
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MSM7707
MSM7707
32kbps)
Hz/12
b724240
0D257
TQFP100-P-1414-0
M7707
rd201
PLD-10
imv D6-11
BV 726 C 1 Converter
w5753
fd187
sGCT function
PR 161A
RD202
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MSM5117405
Abstract: MSM5117405B
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
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E2G0039-17-41
MSM5117405B_
304-Word
MSM5117405B
26/24-pin
MSM5117405
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Untitled
Abstract: No abstract text available
Text: For Immediate Assistance, Contact Your Local Salesperson esssar OPA64Q Wideband Voltage Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • COMMUNICATIONS • MEDICAL IMAGING • TEST EQUIPMENT UNITY-GAIN BANDWIDTH: 1.3GHz UNITY-GAIN STABLE
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OPA64Q
-75dBc
10MHz
OPA640
MIL-STD-883.
002M703
OPA640>
17313L5
00247G4
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Untitled
Abstract: No abstract text available
Text: OPA623 B U R R - B R O W N AVAILABLE IN DIE Wide Bandwidth, Current-Feedback OPERATIONAL AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • BANDWIDTH: 350MHz, 2.8Vp-p HIGH OUTPUT CURRENT: ±70mA SLEW RATE: 2100V/ns, 5Vp-p DIFFERENTIAL GAIN/PHASE: 0.12%/0.05°
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OPA623
350MHz,
100V/ns,
OPA623
AMPLIFIERS23
10ns/div
17313b5
0024bb3
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Untitled
Abstract: No abstract text available
Text: Or, Call Customer Service at 1-8B0-548-S132 USA f l/ i/ y j B U R R -B R O W N i OPA628 OPA628 FEATURES APPLICATIONS • • • • • BROADCAST QUALITY VIDEO • • • • • EXCELLENT DIFFERENTIAL GAIN: 0.015% EXCELLENT DIFFERENTIAL PHASE: 0.015°
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1-8B0-548-S132
OPA628
60dBm
150MHz
30MHz
OPA628
150i2
ADC614
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Untitled
Abstract: No abstract text available
Text: KSA643 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSD261 • Collector Dissipation Pc =500mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC)
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KSA643
KSD261
500mW
Emitt350/
0024b4b
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5962-9310504QXA
Abstract: MG80486DX-25 mg80486DX-33 MG80486DX33 59629310506QXA MG80486 80486dx33 TA80486DX266 80486DX-25 5962-9310505QXA
Text: REVISIONS LTR DESCRIPTION Add devices 03, 04. throughout. DATE YR-MO-DA Editorial changes Add devices 05, 06, 07, 08. throughout. Editorial changes Add device types 09 and 10. Update boilerplate. APPROVED 94-03-23 Monica L. Poelking 96-03-28 Monica L. Poelking
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TD0M70Ã
00E4fc
5962-9310504QXA
MG80486DX-25
mg80486DX-33
MG80486DX33
59629310506QXA
MG80486
80486dx33
TA80486DX266
80486DX-25
5962-9310505QXA
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Untitled
Abstract: No abstract text available
Text: • b b S a i a i QQS4h?3 QTT » A P X N AMER PHILIPS/DISCRETE B F720 B F722 b?E » SILICON EPITAXIAL TRANSISTORS NPN transistors in a microminiature plastic envelope intended for class-B video output stages in colour television receivers, and general purpose high voltage circuits.
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BF721
BF723
BF720
BF722
bbS3T31
0024b75
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Untitled
Abstract: No abstract text available
Text: • £.b53531 002MLi21 ?TD H A P X N AUER PHILIPS/DISCRETE BF510 to 513 b?E D J V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Asymmetrical N-channel planar epitaxial junction field-effect transistors in the miniature plastic envelope intended fo r applications up to the v.h.f. range in hybrid thick and thin-film circuits. Special
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b53531
002MLi21
BF510
BF510)
BF511)
BF512)
BF513)
bb53531
D02MbE4
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BF550
Abstract: transistor marking code 325 0024-B
Text: • bbSBTBi □ □ S 4 b in aaT m a p x N AUER PHILIPS/DISCRETE BF550 b7E D SILICON PLANAR EPITAXIAL TRANSISTOR P-N-P transistor, in a microminiature plastic envelope, intended for applications in thick and thin-film circuits. This transistor is primarily intended for use in i.f. detection applications.
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24LMC]
BF550
OT-23
BF550
transistor marking code 325
0024-B
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power
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E2G0033-17-41
304-Word
MSM5116400B
/24-pin
cycles/64
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
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17405B_
E2G0039-17-41
304-Word
MSM5117405B
/24-pin
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power
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17400B_
E2G0035-17-41
304-Word
MSM5117400B
/24-pin
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KSR1004
Abstract: KSR2004
Text: KSR1004 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION B ia s R e s is to r B u ilt In • Switching circuit, Inverter. Interface circuit Driver circuit • Built in bias Resistor(Ri=47KÍÍ, R¡ = 47KÍ2) • Complement to KSR2004 TO-92 ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
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KSR1004
47Kil,
KSR2004
10fiA,
KSR1004
KSR2004
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KSA708
Abstract: KSC1008
Text: KSA708 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY AMPLIFIER TO-92 MEDIUM SPEED SWITCHING • Complement to KSC1008 • Collector-Base Voltage VCBo=-80V • Collector Dissipation Pc =800mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Voltage
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KSA708
KSC1008
800mW
-100fÂ
QQ24b4Ã
Sbm42
KSA708
KSC1008
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