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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-16SL Q0225Bb 00225A7

    TIM7179-16SL

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16SL Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 31.5 dBm, - Single carrier level • High power - P-idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High efficiency - Tladd = 3_l% at 7-1 GHz to 7.9 GHz


    OCR Scan     		PDF TIM7179-16SL D0225Ã TIM7179-16SL_ TIM7179-16SL