Untitled
Abstract: No abstract text available
Text: T O S H IB A MP6751 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6751 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage
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OCR Scan
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MP6751
001EAA2
TjS125
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PDF
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J2C48C
Abstract: No abstract text available
Text: T O SH IB A 10GW J2C48CU10GWJ2C48C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 10GWJ2C48C, U10GWJ2C48C SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION. • • • Repetitive Peak Reverse Voltage : Vrrm = 40V Average Output Rectified Current : Io = 10A
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J2C48CU10GWJ2C48C
10GWJ2C48C,
U10GWJ2C48C
10GWJ2C48C
12-10D1A
12-10D2A
J2C48C
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA MG75Q1JS40 MG75Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. 3-M5 • • 2~05.6±o.3 High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage
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OCR Scan
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MG75Q1JS40
2-94D3A
Is75Q1JS40
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4605 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT 2SC4605 Unit in mm VIDEO OUTPUT FOR SUPER HIGH RESOLUTION DISPLAY HIGH SPEED SWITCHING APPLICATIONS 10 ±0.3 • • • • High Transition Frequency : fr = 1.1GHz (Typ.) Low Collector Output Capacitance : C0b = 4.8pF (Typ.)
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OCR Scan
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2SC4605
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A MP4005 T O S H IB A P O W E R T R A N SIST O R M O D U L E SILIC O N NPN & P N P E P IT A X IA L T Y P E D A R LIN G T O N P O W E R TR A N SIST O R 4 IN 1 MP4005 HIGH PO W ER SWITCHING APPLICATIONS. IN D U STRIA L APPLICATION S U n it in mm
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OCR Scan
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MP4005
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK2037 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL TYPE 2SK2037 Unit in mm HIGH SPEED SWITCHING APPLICATIONS. ANALOG SWITCHING APPLICATIONS. • • • High Input Impedance. Low Gate Threshold Voltage Excellent Switching Times . 1.2 5 ± 0 .1
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2SK2037
28/ffl
34//S
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A RN1441 ~RN1444 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS RN1441, RN1442, RN 1443, RN1444 Unit in mm MUTING AND SWITCHING APPLICATIONS • • High Emitter-Base Voltage : V e b o = 25V (Min.) High Reverse hpg : Reverse hFE = 150 (Typ.) (V C E = —2V, IC = —4mA)
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RN1441
RN1444
RN1441,
RN1442,
O-236MOD
SC-59
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 5GLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5GLZ47A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION ^3.2 ±0.2 10.3 M A X . • Repetitive Peak Reverse Voltage :Vrrm • Ultra Fast Reverse-Recovery Time : tj.r =35ns
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OCR Scan
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5GLZ47A
961001EAA2'
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PDF
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MG8Q6ES42
Abstract: No abstract text available
Text: T O SH IB A MG8Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG8Q6ES42 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm MOTOR CONTROL APPLICATIONS. 92.7±0.6 • The Electrodes are Isolated From Case. • 6 IGBTs are B uilt Into 1 Package. • Enhancement-Mode
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OCR Scan
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MG8Q6ES42
12-FA
150fi
MG8Q6ES42
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A SF10GZ47,SF10JZ47 TOSHIBA THYRISTOR SILICON DIFFUSED TYPE SF10GZ47, SF10JZ47 M EDIUM PO W ER CONTROL APPLICATIONS • • • U nit in mm 1 0 .3 M A X Repetitive Peak Off-State Voltage Repetitive Peak Reverse Voltage Average On-State C urrent Isolation Voltage
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OCR Scan
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SF10GZ47
SF10JZ47
SF10GZ47,
SF10JZ47
SF10GZ47
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 2SK1825 TOSHIBA FIELD EFFECT TRANSISTOR 2SK SILICON N CHANNEL MOS TYPE 825 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • • • • • 4V Gate Drive Low Threshold Voltage : High Speed Enhanncement-Mode Small Package 0.8—2.5V
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2SK1825
001EAA2
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 5GLZ47A TOSHIBA HIGH EFFICIENCY RECTIFIER SILICON EPITAXIAL TYPE 5GLZ47A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION ^3.2 ±0.2 10.3 M A X . • Repetitive Peak Reverse Voltage : Vrrm • Ultra Fast Reverse-Recovery Time : tj.r =35ns
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OCR Scan
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5GLZ47A
961001EAA2'
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SD2131 2 S D 2 1 31 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON Unit in mm HIGH PO W ER SWITCHING APPLICATIONS H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 10 ±0.3 • High DC Current Gain : hFE = 2000 (Min.) (VCE = 3V, Ic = 3A)
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OCR Scan
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2SD2131
150mJ
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE MP4503 SILICON NPN & PNP EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4503 HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD INDUSTRIAL APPLICATIONS Unit in mm
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OCR Scan
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MP4503
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MP6751 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MP6751 HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode Low Saturation Voltage
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OCR Scan
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MP6751
001EAA2
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 2SC3657 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SC3657 SWITCHING REGULATOR AND HIGH VOLTAGE SWITCHING APPLICATIONS U n it in mm 1 5 .9 M A X . V / 2.0 HIGH SPEED DC-DC CONVERTER APPLICATIONS ¿3.2 ±0.2 Lr> P / • High Collector Breakdown Voltage : VCEO = 800V
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OCR Scan
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2SC3657
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage
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OCR Scan
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MG150Q1JS40
150Q1JS40
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG200Q1ZS40 MG 2 0 0 Q 1 Z S 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. CHOPPER APPLICATIONS. • • High Input Impedance High Speed : tf=0.5/*s Max. trr=0.5,MS (Max.) Low Saturation Voltage
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OCR Scan
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MG200Q1ZS40
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A 2SC5095 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC5095 Unit in mm V H F- U H F BAND LO W NOISE AM PLIFIER APPLICATIONS. • . Low Noise Figure, High Gain. NF=1.8dB, |S2lel2 = 7.5dB f=2GHz 2.1 ±0.1 M A X IM U M RATINGS (Ta = 25°C)
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2SC5095
SC-70
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PDF
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MG15Q6ES42
Abstract: No abstract text available
Text: T O SH IB A MG15Q6ES42 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 15Q6ES42 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The Electrodes are Isolated from Case. 6 IGBTs are Built Into 1 Package. Enhancement-Mode
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OCR Scan
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MG15Q6ES42
15Q6ES42
12-FAST-ON-TAB
MG15Q6ES42
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PDF
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Untitled
Abstract: No abstract text available
Text: T O S H IB A MG150Q1JS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG 150Q1JS40 HIGH PO W ER SWITCHING APPLICATIONS. U nit in mm CHOPPER APPLICATIONS. • High Input Impedance • High Speed : tf= 0.5/*s Max. trr=0.5,MS (Max.) • Low Saturation Voltage
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OCR Scan
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MG150Q1JS40
150Q1JS40
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PDF
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9CTI
Abstract: No abstract text available
Text: TOSHIBA MG30V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG30V2YS40 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete H alf Bridge in One
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OCR Scan
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MG30V2YS40
2-94D1A
TjS125
9CTI
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 10GW J2C48CU10GWJ2C48C TOSHIBA SCHOTTKY BARRIER RECTIFIER STACK SCHOTTKY BARRIER TYPE 10GWJ2C48C, U10GWJ2C48C SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION. • • • Repetitive Peak Reverse Voltage : Vrrm = 40V Average Output Rectified Current : Io = 10A
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OCR Scan
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J2C48CU10GWJ2C48C
10GWJ2C48C,
U10GWJ2C48C
10GWJ2C48C
12-10D1A
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PDF
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 5Z27,5Z30 TOSHIBA ZENER DIODE SILICON DIFFUSED JUNCTION 5Z27, 5Z30 Unit in mm PO W ER SURGE SUPPRESSOR — designed for use as a reverse power transient suppressor to protect automotive electrical equipments from over-voltage conditions. CATHODE
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OCR Scan
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961001EAA2'
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PDF
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