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    stk 490 110

    Abstract: stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010
    Text: Ordering number : EN4830A Thick Film Hybrid 1C No.4830A S TK 400-020 3-Channel AF Power Amplifier Split Power Supply ( 1 5 W + 1 5 W + 1 5 W min, THD = 0.4 %) Overview Package Dimensions Now, thick-film audio power amplifier ICs are available with pin-com patibility to permit a single PCB to be


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    PDF EN4830A STK400-020 0Cllb57fl stk 490 110 stk 490 310 stk 490 070 4830A k4013 Transistor y2n stk 490 040 stk*470 090 stk 470 070 STK 290 010

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet July 1995 m A T& T Microelectronics DSP1605 Digital Signal Processor 1 Features 2 Description • For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation: — 31.25 ns instruction cycle time (32 MIPS)


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    PDF DSP1605 16-bit 36-bit 005002b 001bb5b

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual


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    PDF KM424C257 110ns 130ns 150ns 28-PIN

    intel 4040

    Abstract: DSP1605 5-4001 DB3C intel 4008 te 4017 tl 4013 540T2 motorola XT 1606 RM RSTB14
    Text: Preliminary Data Sheet July 1995 £ 3 A TgT Microelectronics DSP1605 Digital Signal Processor • 1 Features 2 Description ■ For 5 V operation: — 25 ns instruction cycle time 40 MIPS — 30 ns instruction cycle time (33 MIPS) ■ For 3.3 V operation:


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    PDF 16-bit 36-bit intel 4040 DSP1605 5-4001 DB3C intel 4008 te 4017 tl 4013 540T2 motorola XT 1606 RM RSTB14

    DIGITAL GATE EMULATOR USING 8085

    Abstract: 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent
    Text: Library Characteristics il A M I AMERICAN MICROSYSTEMS, INC. L ib ra ry Characteristics AMI6G 0.6 micron CMOS Gate Array AMI6Gx Gate Array Family Overview U S A B LE G ATES1 PART NUM B ER2 B O N D PAD S I/O C E L L S 2 LM 3 LM AMI6G4 1.39 1.85 44 52 AMI6G16S


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    PDF AMI6G16S AMI6G33S AMI6G41S AMI6G70S AMI6G106S AMI6G150S AMI6G202S AMI6G333 AMI6G471 AMI6G603 DIGITAL GATE EMULATOR USING 8085 8086 microprocessor book by A K RAY 180 nm CMOS standard cell library AMI IC1732 DL021 M91C360 ami 0.6 micron 3682D ami equivalent gates ic/TDA7388 equivalent

    lh64256

    Abstract: LH64256BD70 CMOS Dynamic RAM 1M x 1
    Text: LH64256B CMOS 1M 256K x 4 Dynamic RAM FUNCTION DESCRIPTION • 262,144 words x 4 bit The LH64256B is a 262,144 word x 4-bit dynamic RAM which allows fast page mode access. The LH64256B is fabricated on SHARP’S advanced CMOS double-level polysilicon gate technology. With its input


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    PDF LH64256B 20-pin, 300-mil 26-pin, 400-mil 20zip-2 lh64256 LH64256BD70 CMOS Dynamic RAM 1M x 1

    2SD1872

    Abstract: darlington complementary 120v 2SB1252
    Text: Power T ransistors 2SB1252 2SB1252 Silicon PNP Epitaxial Planar Darlington Type Package Dimensions Power Amplifier Complementary Pair with 2SD1872 • Features U n it : i 4.4 max. 10 .2 m ax. 5.7max. 2 .9 m a x . • O p tim u m fo r 35W hi-fi o u tp u t


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    PDF 2SB1252 2SD1872 001b27Ã 2SD1872 darlington complementary 120v 2SB1252