0017FL3D Search Results

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Text: 45E J> m TGTVESQ IT0S4 0017fl3D 2 2SJ115 "T-sq-z-i> TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE TOSHIBA DISCRETE/OPTO Unit in mm AU DI O FREQUENCY POWER AM PL IF IE R APPLICATION. 0 3 .2 t a g 1S9MAX. FEATURES: . High Breakdown Voltage : V[)SS = ~160V