Untitled
Abstract: No abstract text available
Text: Data Sheet May 1995 a A T S T ~= ^ ar Microelectronics DSP1618 Digital Signal Processor Features • Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at
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DSP1618
005002b
DSP1618
100-Pin
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ati exm 321
Abstract: sd 7401 xlxxxx DSP1610 TMs 1122 AB14 DSP1618 CXR 726 Microprocessor 100-BQFP aop 741
Text: AT&T Data Sheet May 1995 •= ? ■Microelectronics DSP1618 Digital Signal Processor 1 Features ■ Optimized for digital cellular applications with a bit manipulation unit and an error correction coprocessor for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times at
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DSP1618
mana12
100-Pin
005002b
DSP1618
L45/0
ati exm 321
sd 7401
xlxxxx
DSP1610
TMs 1122
AB14
CXR 726
Microprocessor 100-BQFP
aop 741
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1N4728A
Abstract: 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A 1N4735A T-77-T3
Text: N AMER PHILIPS/DISCRETE SSE D • ^53=131 0017373 3 ■ 1N4728A to 1N4761A VOLTAGE REGULATOR DIODES The series consits of 34 types with nominal working voltages ranging from 3.3 to 75 V. MECHANICAL DATA Fig. 1 DO-41 SOD66 . 0,81 1 max t Dimensions in mm >t-
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DO-41
7Z78729
T-77-T3
7Z24SSÃ
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
T-77-T3
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ci 741
Abstract: tl 741 IRFS740 742 mosfet CI 4017 IRFS743 LS 741 mosfet 350v 10A te 4017 IRFS741
Text: SA MS UN G E L E C T R O N I C S INC b7E ]> • 0 D 1 7 3 7 4 034 N-CHANNEL POWER MOSFETS IRFS740/741/742/743 FEATURES • • • • • • • Lower R d s ON Improved inductive ruggedness Fast sw itching times Rugged polysilicon gate cell structure Lower input capacitance
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0D17374
IRFS740/741/742/743
O-220F
IRFS740/741/742/743
IRFS740
IRFS741
IRFS742
IRFS743
ci 741
tl 741
742 mosfet
CI 4017
LS 741
mosfet 350v 10A
te 4017
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headland 386
Abstract: transistor zo 607 MA 7S b2211 full subtractor using ic 74138
Text: LOGIC LCB300K Cell-Based 5 Volt ASIC Products Databook October 1994 This document contains proprietary information of LSI Logic Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Logic Corporation.
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LCB300K
DB04-000049-00,
D-102
I40lg
headland 386
transistor zo 607 MA 7S
b2211
full subtractor using ic 74138
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MSM51V16100
Abstract: 2M2H
Text: O K I Semiconductor MSM5 1 V16100_ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM51V16100 is a new generation dynamic organized as 16,777,216-word x 1-bit. The technology used to fabricate the MSM51VI6100 is OKI's CMOS silicon gate process technology.
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MSM51V16100_
216-Word
MSM51V16100
MSM51VI6100
cycles/64ms
72M2MD
0D173Ã
MSM51V16100
2M2H
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Untitled
Abstract: No abstract text available
Text: SSlflMbfl 00173t>b bQb Final Electrical Specifications LT1680 u i m TECHNOLOGY High Power DC/DC Step-Up Controller June 1997 KO TU IKS DCSCRIPTIOn • High Voltage: Operation Up to 60V Max ■ High Current: N-Channel Drive Handles Up to 10,000pF Gate Capacitance
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00173t
LT1680
000pF
200kHz
LT1268
150kHz
LT1270A
60kHz
LT1339
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H7057
Abstract: TI241 00003H d70f3008 p103 t020 D70F30 PD703008
Text: NEC USER'S MANUAL ¿¿PD703008 /iPD70F3008 /IPD703008Y ¿¿PD70F3008Y e NEC Corporation 1997 b427SSS DDTTQll bSfi Document No. U11969EJ1V0UM00 1st edition Date Published January 1997 N Printed in Japan ft Regional Information S om e information contained in this document may vary from country to country. Before using any N E C
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uPD703008
uPD70F3008
uPD703008Y
uPD70F3008Y
b427SSS
U11969EJ1V0UM00
L427S2S
H7057
TI241
00003H
d70f3008
p103 t020
D70F30
PD703008
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