NE644
Abstract: 2SC2272 NE64400 NE64408 NE64480 NEC Microwave Semiconductors
Text: ‘N E C/ ~ • CALIFORNIA 6427414 N t L/ 3D LA LiruKiM i* D F|b 4 2 7 4 m □□□□lb3 30C 00163 3 |~ D “p MICROWAVE TRANSISTOR SERIES NE644 FEATURES DESCRIPTION AND APPLICATIONS • LOW NOISE F I G U R E 2.7 dB at 4.0 GHz T he N E 6 4 4 is the latest series of NPN silicon transistors
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NE644
NE644
NE64-124
NE64408)
34-6393or
2SC2272
NE64400
NE64408
NE64480
NEC Microwave Semiconductors
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LSI Logic SAS 1068
Abstract: 87XX module engenio 84XX 98XX 83XX Series lsi 1078
Text: USER’S GUIDE MegaRAID SAS Device Driver Installation June 2009 80-00163-01 Rev.D This document contains proprietary information of LSI® Corporation. The information contained herein is not to be used by or disclosed to third parties without the express written permission of an officer of LSI Corporation.
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Untitled
Abstract: No abstract text available
Text: part number: description: 10-00546 Cable, 1830 mm, 3P 90° mini-DIN female 50-00163, to stripped tinned, 26 AWG, UL2464 30-00060, shield date: March 10, 2011 rev: A page: 1 of 2 Specifications: connector description 1 3P mini DIN female, molding style, brass, nickel plating, P/N 50-00163
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UL2464
UL2464,
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ms 25237-387
Abstract: MS 25237-387 LAMP 416SST 4TL32-3D MS-252 410SST X92331-TL FAA-PMA 4TL32-12A 387 LAMP
Text: F O - 5 5 1 1 1 -A HONEYWELL P A R T NUMBER REV DOCUMENT 14 0016336 CHANGED BY CHECK VKR 250CT05 BP 4TL32 SERIES CHART 1 NOTES 1 E A C H F U R N I S H E D U N A S S E M B L E D FOR 4TL32-12A L E V E R L O C K E D IN A L L P O S I T I O N S 28 V O L T T - l 3 / 4 LAMP P E R MS 2523 7-3 87 F U R N I S H E D
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250CT05
4TL32
4TL32-12A
X92331-TL
X92332-TL
5M-1994
ms 25237-387
MS 25237-387 LAMP
416SST
4TL32-3D
MS-252
410SST
FAA-PMA
4TL32-12A
387 LAMP
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dc815
Abstract: No abstract text available
Text: F U J I TS U MICROELECTRONICS 374^2 47E D 0016325 2 • F U I "T - ^ -O S FUJITSU October 1991 DATA SHEET■ F5CB Series Piezoelectric Filters SAW-BPF, 700 MHz to 1000 MHz The F5 series are wide bandpass filters for use in the 700 MHz to 1000 MHz range. The F5 series uses a single lithium tantalate piezoelectric crystal LiTa03 that has a
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LiTa03)
LiTa03
IlS33b
dc815
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IRF430
Abstract: IRF431 IRF432 IRF433 18319
Text: 3875081 G E SOLID STATE Standard Power MOSFETs "Öl DE I 3Ö7SDÖ1 0016311 ^ f 01E 18319 D T -ZÏ' _ IRF430, IRF431, IRF432, IRF433 File Num ber 1572 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE
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IRF430,
IRF431,
IRF432,
IRF433
50V-500V
IRF432
IRF433
3075QÃ
IRF430
IRF431
18319
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Untitled
Abstract: No abstract text available
Text: part number: description: 10-00546 Cable, 1830 mm, 3P 90° mini-DIN female 50-00163, to stripped tinned, 26 AWG, UL2464 30-00060, shield date: March 10, 2011 rev: A page: 1 of 2 Speciications: connector description 1 3P mini DIN female, molding style, brass, nickel plating, P/N 50-00163
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UL2464
UL2464,
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Untitled
Abstract: No abstract text available
Text: • b iX W H 0016321 07« ■ MITSUBISHI OPTICAL DEVICES FU-45SDF-3M76 1.3 |am DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL (CATV) D E S C R IP TN ION FE A TU R E S M odule type F U -45S D F -3M 76 has been developed • Distributed Feedback (DFB) Laser diode
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FU-45SDF-3M76
b24c5fl2ci
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530102B00150
Abstract: No abstract text available
Text: Standard Products Found Page 1 of 2 For use with TO-220 packages 530102b00150 VIS#001634 Mechanical Outline Drawing A Dim 18.29 .720 Thermal Resistance 6.3 Thermal resistance value is based on a 75°C rise in natural convection
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O-220
530102b00150
530102b00150
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Untitled
Abstract: No abstract text available
Text: part number: description: 10-00426 Cable, 1830 mm, 3P mini-DIN female 50-00163, to stripped tinned,20 AWG, UL2464 30-00023, shielded date: March 8, 2011 rev: A page: 1 of 2 Specifications: connector description 1 3P mini DIN female, molding style, brass, nickel plating, P/N 50-00163
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UL2464
UL2464,
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8011B
Abstract: 8010-A-2-E-10 K100
Text: ÆSSÇf fW lll'S I w < 001634 W W hite DUAL TRACKING VOLTAGE REFERENCE 8010/8011 SERIES Technology, Inc. t*; .'¡m E w [# .# ? W <v • •'! w,i • 01 v - 1; ■ ■ ■ I , i ’ ■■: SHi i 1 FEATURES î&sj'Sî ^stâpiaïv^. ■ .<_ 't .4 •• «PP
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801O-X-X-X-X
8011B
8010-A-2-E-10
K100
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Untitled
Abstract: No abstract text available
Text: part number: description: 10-00426 Cable, 1830 mm, 3P mini-DIN female 50-00163, to stripped tinned,20 AWG, UL2464 30-00023, shielded date: March 8, 2011 rev: A page: 1 of 2 Speciications: connector description 1 3P mini DIN female, molding style, brass, nickel plating, P/N 50-00163
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UL2464
UL2464,
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Toko
Abstract: f7501 D-71254
Text: • W orld H eadq uarte rs ■ Tokyo, Japan 1-17, H igashi-Yukigaya 2-chom e, Ohta-ku, Tokyo, 145-8585 Japan Tel : 03 3727-1161 Fax : (03) 3727-1176, 1169 Telex: J226 96 ■ O ve rse a s O ffice s of the T O K O Group ■ G e rm an y TOKO Electronic Europe GmbH
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D-40235
D-71254
F-75015
Toko
f7501
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MSM5117400
Abstract: No abstract text available
Text: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.
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MSM5117400
304-Word
MSM5117400
cycles/32ms
capab40
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MIL-PRF-8805
Abstract: 2590039-3 S 2262 1EN367 2590039 DTL 23053 MIL-DTL-23053/5 MFR-80212 010of Res44
Text: CATALOG a 51 1EN367 SWITCH - ENCLOSED on LISTING F E D . M F G . CODE 9 1 9 2 9 I . S . ARMY DRAWI NG 19207-12298141 L 1^ CONNECTOR DETAIL 3X N O . 1 6 W I R E L E A D P E R M I L W 8 1 0 4 4 / 9 - 1 6 - CD CO . 470 o . 0 7 2 ± . 004 WIDE X DEEP KEYWAY TO
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C096063
1EN367
MIL-PRF-8805
MIL-PRF-8805
5M-1982
2590039-3
S 2262
1EN367
2590039
DTL 23053
MIL-DTL-23053/5
MFR-80212
010of
Res44
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B057r
Abstract: CY7C006 CY7C016 IDT7006 IDT7016
Text: CYPRESS PRELIMINARY 16K x 8/9 Dual-Port Static RAM with Sem, Int, Busy Features Functional Description • C M O S for optim um speed/power • H igh-speed access — 15 n s com m ercial T h e C Y 7C 006 an d C Y 7C 016 a re h ig h s p e e d C M O S 16K x 8 a n d 16K x 9 d u a l
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CY7C006
CY7C016
68-pin
80-pin
7C016)
64-pin
7C006)
IDT7006
IDT7016
B057r
CY7C016
IDT7016
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E231 JFET
Abstract: ADR290 ADR291 ADR292 ADR293 ADR420 ADR421 ADR423 ADR425 siliconix E231
Text: Low Noise Micropower 2.5 V and 4.096 V Precision Voltage References ADR291/ADR292 CONNECTION DIAGRAMS Supply range 2.8 V to 15 V, ADR291 4.4 V to 15 V, ADR292 Supply current: 15 A maximum Low noise: 8 μV and 12 μV p-p 0.1 Hz to 10 Hz High output current: 5 mA
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ADR291/ADR292
ADR291
ADR292
REF02/REF19x
ADR291/
D00163-0-5/11
E231 JFET
ADR290
ADR291
ADR292
ADR293
ADR420
ADR421
ADR423
ADR425
siliconix E231
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Untitled
Abstract: No abstract text available
Text: EmberZNet 4.7.2 API Reference: For the EM250 SoC Platform December 18, 2012 120-3016-000-4720 Silicon Laboratories Inc. 400 West Cesar Chavez Austin, TX 78701 Tel:1+ 512 416-8500 Fax:1+(512) 416-9669 Toll Free:1+(877) 444-3032 www.silabs.com Disclaimer The information in this document is believed to be accurate in all respects at the time
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EM250
ass00101
BIT32
EM250
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01AE
Abstract: HEART BEAT SENSOR nmis 3007 16C54 AN585 PIC16C54 PIC16C57 PIC16C64
Text: AN585 A Real-Time Operating System for PICmicro Microcontrollers Why do I Need a Real-Time Kernel? Author: Jerry Farmer Myriad Development Company INTRODUCTION Ever dream of having a Real-Time Kernel for the PIC16CXXX family of microcontrollers? Or ever wonder what Multitasking or Threads are all about? Then
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AN585
PIC16CXXX
DS00585B-page
01AE
HEART BEAT SENSOR
nmis 3007
16C54
AN585
PIC16C54
PIC16C57
PIC16C64
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16C74
Abstract: AN594 AN539 0795 AN545 AN564 PIC17C42 D376
Text: M Author: AN594 Using the CCP Module s CCP OPERATION Mark Palmer Microchip Technology Inc. This application note discusses the operation of a Capture/Compare/PWM (CCP) module, and the interaction of multiple CCP modules with the timer resources. The (CCP) module is software programmable to operate in one of three modes:
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AN594
16C74
AN594
AN539
0795
AN545
AN564
PIC17C42
D376
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Untitled
Abstract: No abstract text available
Text: H B 5 6 A 1 4 0 S e r ie s 1,048,576-Word x 40-Bit High Density Dynamic RAM Module • DESCRIPTION The HB56A140B/SB is a 1M x 40 dynamic RAM module, mounted 10 pieces of 4 Mbit DRAM HM514400AS sealed in SOJ package. An outline of the HB56A140B/SB is a 72-pin single In-line package. Therefore, the HB56A140B/
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576-Word
40-Bit
HB56A140B/SB
HM514400AS)
72-pin
HB56A140B/
ns/70
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sampa
Abstract: AY-3-0214 top octave generator ic
Text: FU J I TS U M I C R O E L E C T R O N I C S 374^2 47E D M ay 1991 Edition 1.0 DATA S H E E T : 0 0 1 Ô 37 1 S « F H I _ FUJITSU MB86460A MODEM WITH INTERNAL VOICE-BAND FILTERS CMOS MODEM CIRCUIT WITH INTERNAL VOICE-BAND FILTERS FOR CORDLESS TELEPHONES The MB86460 MSK Minimum Shift Keying modem IC contains a 1200-band MSK
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MB86460A
MB86460
1200-band
48-LEAD
FPT-48-M02)
sampa
AY-3-0214 top octave generator ic
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B605
Abstract: HC711E9 S085 b673 power transistor IC1 7812 b673 transistor SPGMR11 AN1060 MC68HC811E2FN2 M68HC11
Text: M68HC11E Family Data Sheet M68HC11 Microcontrollers M68HC11E/D Rev. 5 6/2003 MOTOROLA.COM/SEMICONDUCTORS MC68HC11E Family Data Sheet To provide the most up-to-date information, the revision of our documents on the World Wide Web will be the most current. Your printed copy may be an earlier
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M68HC11E
M68HC11
M68HC11E/D
MC68HC11E
B605
HC711E9
S085
b673 power transistor
IC1 7812
b673 transistor
SPGMR11
AN1060
MC68HC811E2FN2
M68HC11
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Untitled
Abstract: No abstract text available
Text: -P R E L IM I N A R Y July 1996 Edition 1.0 FUJITSU PRO DUCT PROFILE SHEET MB81117422A-125/-100/-84/-67 [2K Refresh] CMOS 2 X 2M X 4 SYNCHRONOUS DRAM CMOS 2 BANKS OF 2,097,152-WORDS x 4-BIT SYNCHRONOUS DYNAMIC RANDOM ACCESS MEMORY The Fujitsu MB81117422A is a CMOS Synchronous Dynamic Random Access Memory
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MB81117422A-125/-100/-84/-67
152-WORDS
MB81117422A
MB81117422A-125
MB81117422A-100
MB81117422A-84
MB81117422A-67
44-LEAD
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