Untitled
Abstract: No abstract text available
Text: 2SJ594 P- Channel Silicon MOS FET DC/DC Converter Use TENTATIVE Features and Applications • Low ON-state resistance. • Ultrahigh-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C unit Drain to Source Voltage Gate to Source Voltage Drain Current DC
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2SJ594
2SJ594
000905TM2fXHD
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J596
Abstract: No abstract text available
Text: 2SJ596 P- Channel Silicon MOS FET DC/DC Converter Use TENTATIVE Features and Applications • Low ON-state resistance. • Ultrahigh-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage Drain Current DC
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Original
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PDF
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2SJ596
2SJ596
000905TM2fXHD
J596
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J595
Abstract: No abstract text available
Text: 2SJ595 P- Channel Silicon MOS FET DC/DC Converter Use TENTATIVE Features and Applications • Low ON-state resistance. • Ultrahigh-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C unit Drain to Source Voltage Gate to Source Voltage Drain Current DC
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Original
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PDF
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2SJ595
2SJ595
000905TM2fXHD
J595
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