marking kp
Abstract: No abstract text available
Text: CPH3414 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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CPH3414
-500mA
CPH3414
000726TM2fXHD
marking kp
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Untitled
Abstract: No abstract text available
Text: MCH3310 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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Original
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PDF
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MCH3310
--30V
--10V
--10V
--10V,
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Untitled
Abstract: No abstract text available
Text: CPH3314 P- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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Original
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PDF
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CPH3314
--10V
--10V
--10V,
CPH3314
|
marking KK
Abstract: No abstract text available
Text: MCH3410 N- Channel Silicon MOS FET Very High-Speed Switching Applications TENTATIVE Features and Applications • Low ON-state resistance. • Very high-speed switching. • 4V drive. Absolute Maximum Ratings / Ta=25°C Drain to Source Voltage Gate to Source Voltage
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Original
|
PDF
|
MCH3410
000726TM2fXHD
marking KK
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