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    Untitled

    Abstract: No abstract text available
    Text: +85°C Polypropylene Film Capacitors with Double Sided Metallized Electrodes IGBT Snubber Capacitor FEATURES Direct Mount IGBT Low ESR Low Self Inductance High Voltage WVDC and VAC High RMS Currents Negative Temperature Coefficient SPECIFICATIONS PERFORMANCE RATINGS/TESTS


    OCR Scan     		PDF 100VDC 205PMB700K 2O5PMB850K 225PMB850K 255PMB700K 255PMB850K 305PMB7B0K 3S5PMB700K

    Untitled

    Abstract: No abstract text available
    Text: IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16M x 64/72 DRAM MODULE Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • 16Mx64.16Mx72 Extended Data Out Page Mode DÎMMs • Performance: -60 Wc [RAS Access Time tCAC


    OCR Scan     		PDF IBM11N16735B IBM11N16645B IBM11N16735C IBM11N16645C 16Mx64 16Mx72 104ns 75H1640 SA14-4626-02 DD05225

    40267

    Abstract: GM71C18163AJ-6 os 910 Edd 44 GM71 GM71C GM71C18163AJ-7 GM71C18163AJ-8 gm71c18163
    Text: @ LG Semicon. Co. LTD Description Features The GM71C S 18163B/BL is the new generation dynamic RAM organized 1,048,576 words x 16 bit. GM71C(S)18163B/BL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The


    OCR Scan     		PDF 18163B/BL GM71C 42pin 400mil 40267 GM71C18163AJ-6 os 910 Edd 44 GM71 GM71C18163AJ-7 GM71C18163AJ-8 gm71c18163