Untitled
Abstract: No abstract text available
Text: S O NY CORP/COMPONENT S o n y . PRODS 50E I> • Û3Û2363 0003flSb ft « S O N Y _ CXB1111Q/Q-Y / - ¿ / S -' o 7 4-bit Lo ok-A head C a rry G enerator Description Pin Assignment The C X B 1 U 1 Q is a n ultra high speed m onolithic E C L 4-bit Look-Ahead C a rry Generator.
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0003flSb
CXB1111Q/Q-Y
700ps
24pin
QFP-24M-S01)
32pin
QFP-32M-L02)
QFP-32C-L01)
32pin
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LM236XB
Abstract: No abstract text available
Text: HITACHI AMERICA/ ELECTRON lbE ]> • mHfa201 0003flSb A ■ LM236XB • " P M l- S S ■ 640 dot W x 200 dot (H) graphic and alpha-numeric dis play ■ Attachable controller LSI : HD64646F (See page 14) ■ Color tone: Yellowgreen MECHANICAL DATA (Nominal dimensions)
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mHfa201
0003flSb
LM236XB
HD64646F
44U201
LM236XB
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Transistor tic 1260
Abstract: AM radio ECG105 ecg1055 AM IF amplifier R/Transistor tic 1260
Text: PHILIPS E C G INC H semiconductors 17E bhSBTSa 0003fl53 a T -7 7 -0 5 -0 7 ECG1055* FM/AM-IF AMPLIFIER AND AM CONVERTER The ECG1055 is a monolithic integrated circuit designed as a combined FM/AM -IF amplifier and AM converter for use in high performance FM/AM radio receivers.
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0003f
ECG1055*
ECG1055
ECG1056
ECG10S5
ECG1055
Transistor tic 1260
AM radio
ECG105
AM IF amplifier
R/Transistor tic 1260
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dialight, 3 digit, 7 segment display
Abstract: 730-6020 ED12-10G display 54-11 J1699-1 730-6002 K6001 dialight 730-6020
Text: 1SE 0 | D I A L I GUT CORP Sf il 5b ?5 0003fl4fl s o lid s t a t e L E D 4 | /=•-/?-36 R e a d o u t A s s e m b ly c h a r a c t e r h e ig h t: . 6 0 0 " 7 3 9 S e rie s Complete assembly ready for instant panel mounting - saves time, saves money. Features
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0003fl4fl
dialight, 3 digit, 7 segment display
730-6020
ED12-10G
display 54-11
J1699-1
730-6002
K6001
dialight 730-6020
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Dynamic Measurements Corp
Abstract: Dynamic Measurements
Text: DY FI EC IN C lb DE|30Cm ELi □ 0003flc] 4 f~ T S h 0 ? -Ô S ' D IG IT A L T O A N A L O G CONVERTERS S E R IE S 2470 14 B IT P R E C IS IO N H IG H SP EE D D /A C O N V E R T E R S T H E S E M O D U L E S ' H IG H A C C U R A C Y A N D T IG H T S P E C IF IC A T IO N S
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T-SI-09-OS"
Dynamic Measurements Corp
Dynamic Measurements
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Untitled
Abstract: No abstract text available
Text: SONY CORP/CONPONENT S o n y PRODS SDE . D • Ô3Ô23Ô3 0003flm b ■ CXB1105Q/Q-Y T - r s i- o 7 Triple Fan-Out Buffer with Common Enable and Differential Output Description Pin Assignment The C X B 1 1 0 5 Q is an ultra high speed monolithic E C L IC, which contains three Line Drivers. Each
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0003flm
CXB1105Q/Q-Y
24pin
QFP-24M-S01)
IQFP-23M-L02
32pin
QFP-32C-L01)
32pin
QFP-32M-L02)
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Untitled
Abstract: No abstract text available
Text: Rev. 0. G M M 7 3 21000B S /B S G -60/70/80 G oldStar 1 ,0 4 8 ,5 7 6 W O R D S x 3 2 B IT G M M 7322000B S /B S G 6 0 /7 0 /8 0 GOLDSTAR ELECTRON CO., LTD. 2 ,0 9 7 ,1 5 2 W O R D S x 3 2 BIT CMOS D YN AM IC RAM M O D U LE Description Features The GM M 7321000BS/BSG is a iM x 3 2 bits dy
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21000B
7322000B
7321000BS/BSG
7322000BS/BSG
000DQ
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Untitled
Abstract: No abstract text available
Text: 110 MHz Current Feedback A mplifier with Disable HtSH PERFKiW ANCEANAU» M 3 3 IW E I} CIRCUITS Features General Description • 110 M H z 3 dB bandw idth Av = + 2 • 115 M H z 3 dB bandw idth (AV = + 1 ) • 0.01% differential gain, R l = 500H • 0.01° differential phase,
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500fl
EL2166C
EL2166C
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Untitled
Abstract: No abstract text available
Text: Rev. 0. GoldStar GMM791000BNS-60/70/80 1,048,576 WORDS x 9 BIT CMOS DYNAMIC RAM MODULE GOLDSTAR ELECTRON CO., LTD. Description Features The GMM791000BNS is a 1M x 9 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM71C4400BJ, 1M x 4 sealed in 20 pin
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GMM791000BNS-60/70/80
GMM791000BNS
GM71C4400BJ,
71C1000BJ,
GMM791000BNS
067f1
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Untitled
Abstract: No abstract text available
Text: IB M 1 1 M 1 6 4 5 B 1M X 64 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module Optimized for byte-write non-parity applications System Performance Benefits: - • 1Mx64 Extended Data Out Page Mode DIMM • Performance: -60
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1Mx64
75H3412
SA14-4619-01
IBM11M1645B
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ne 5555 timer
Abstract: No abstract text available
Text: Lj 3 E ì> ñin233 ÜG03Ô2E S14 « S E E SEEÛ TECHNOLOGY INC Technology, Incorporated 1024K High Speed EEPROM Ju ly 1992 Features • Military, Extended and Commercial Temperature Rangea • -S 5°C to +125°C Operation Military • -4 0 °C to +85°C Operation (Extended)
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in233
1024K
28C010)
28C010H)
120nsec
400103/A
ne 5555 timer
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Untitled
Abstract: No abstract text available
Text: LF48908 Two Dimensional Convolver D E V IC E S IN C O R P O R A T E D DESCRIPTION FEATURES . _ _ □ 40 MHz Data and Computation Rate □ Nine Multiplier Array with 8-bit Data and 8-bit Coefficient Inputs □ Separate Cascade Input and Output Ports □ On-board Programmable Row
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LF48908
HSP48908
MIL-STD-883,
84-pin
100-pin
LF48908
DOUT14DOUT12
CAS114
CASI11
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71C4400Bj
Abstract: No abstract text available
Text: Rev 0. GoldStar GOLDSTAR ELECTRON CO., LTD. GMM781000BN S-60/70/80 1,048,576 WORDS x 8 BIT CMOS DYNAMIC RAM MODULE Description Features The GM M 781000BN S is a 1M x 8 bits Dynamic RAM Module, mounted 2 pieces of 4M bit DRAM GM 71C4400BJ, 1M x 4 sealed in 2 pin
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GMM781000BN
S-60/70/80
781000BN
71C4400BJ,
4400BJ
0003fl2fl
GMM781000BNS
M0267S7
71C4400Bj
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Untitled
Abstract: No abstract text available
Text: Programmable Peripheral PSD311L 3-Volt Single-Chip Microcontroller Peripheral Preliminary Key Features □ Single Chip Programmable Peripheral for Microcontroller-based Applications □ 256 Kbits of UV EPROM — Organized as 32K x 8 □ 3.0 to 5.5 Volt Operation
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PSD311L
44-pin
PSD311L-25L
PSD311L-25U
PSD311L-25J
PSD311L-25UI
PSD311L-30J
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Untitled
Abstract: No abstract text available
Text: ÖUALITY TECHNOLOGIES CORP 2?E D QUALITY TECHNOLOGIES 74L.L.Ö51 G0D3Ö13 fc. TAPERED PACKAGE T-13A SOLID STATE LAMPS STANDARD RED MV502X DESCRIPTION PACKAGE DIMENSIONS The MV502X Series of solid state indicators is made with gallium arsenide phosphide light emitting diodes.
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MV502X
MV502X
C654A
C1632
10tyS
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Untitled
Abstract: No abstract text available
Text: Fast Recovery Epitaxial Diodes FRED DSEI 2x61 IFAVM = 2x60 A vRRM= 1000 v trr — v RSM Type V rrm V V 1000 1000 Symbol 1 > miniBLOC, SOT-227 B 1 DSEI 2x61-10B Test Conditions Maximum Ratings (per diode) 'frm "^vj “ Tvjm Tc= 50°C; rectangular, d = 0.5
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OT-227
2x61-10B
1997IXYS
0003flbfl
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Untitled
Abstract: No abstract text available
Text: IRFP254 v DSS Standard Power MOSFET cont R DS(on) = 250 V = 23 A = 0.14 a N-Channel Enhancement Mode 9D Symbol Test Conditions V DSS Tj = 25 °C to 150°C 250 V V DGR T, = 25 °C to 150°C; RGS = 1 M£2 250 V v GS vGSM Continuous ±20 V Transient ±30 V
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IRFP254
Q003flc
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83c154f
Abstract: 63c154 T32 fuse
Text: M il DATA SHEET_ 8 0 C 1 5 4 | j / 8 3 C 1 5 4 jH HIGH SPEED 0 TO 42 MHz SINGLE-CHIP 8 BIT MICROCONTROLLER . . . . 80C154)i : ROMLESS VERSION OF THE 83C154p. 80C154(i/83C154(i-L : LOW POWER VERSION 2.7 V < Vcc < 5.5 V ; 0 < F h z < 16 MHz
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80C154
83C154p.
i/83C154
j/83C154
80C154fi/83C154
83c154f
63c154
T32 fuse
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POWER SUPPLY BOARD 94V0
Abstract: upc uninterrupted power supply circuit diagram schematic diagram converter input 12v to 24v 4a HGF052R4 POWER SUPPLY BOARD 94V0 120 HGF240R5 ci 94vo HGE05006 ci 94v0 schematic diagram converter input 24v to 12v
Text: APPLICATION GUIDE 1. Isolated D C -D C C o n verter HG SERIES 1-1 Features 1-3 Functions • I n p u t V o lta g e R a ng e • O v e r lo a d p ro te c tio n D C 2 0 ~ 6 0 V 6W , 12W type • O v e r v o lta g e p ro te c tio n D C 2 0 — 32V (30W , 60 W , 120W type )
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450kHz
POWER SUPPLY BOARD 94V0
upc uninterrupted power supply circuit diagram
schematic diagram converter input 12v to 24v 4a
HGF052R4
POWER SUPPLY BOARD 94V0 120
HGF240R5
ci 94vo
HGE05006
ci 94v0
schematic diagram converter input 24v to 12v
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jrc 5532
Abstract: 5532D 5532DD NJM5532DD 6003 jrc 5532 JRC jrc op amplifier riaa 5532 HJH5532D NJM1458
Text: HIGH PERFORMANCE LOW-NOISE DUAL OPERATIONAL AMPLIFIER NJM5532 The NJM 5532 is a high perform ance dual low noise operational am plifier. C om pared to the standard dual o p e rational amplifiers, such as the NJM 1458, it shows better noise perform ance, im proved output drive capability, and c o n s i
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NJM5532
NJM5532
5532D
NJH5532
0003flb3
jrc 5532
5532DD
NJM5532DD
6003 jrc
5532 JRC
jrc op amplifier
riaa 5532
HJH5532D
NJM1458
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ERB93-02
Abstract: erb93 TA 3000
Text: ERB93-02 1.5A • Outline Drawing l o w l o s s s u p e r h ig h s p e e d r e c t i f i e r ■ Marking ■ Features • Lo w V f • Super high speed switching Color code : S ilv e r • High reliability by planer design 8 u A bridged ty p e name O ro
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ERB93-02
do-15
0003fl37
D003B3Ã
ERB93-02
erb93
TA 3000
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NJM4741D
Abstract: Ta25c DD03 NJM4741 NJM4741M NJM4741V
Text: GENERAL PURPOSE QUAD OPERATIONAL AMPLIFIER NJM4741 T he NJM4741 consists of four independent high-gain operational am plifiers th at are designed for high slew rate, wide band, good noise characteristics. Package Outline Features Wide Band 3.5MHz typ. High Slew Rate
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NJM4741
NJM4741
NJM4741D
NJM4741M
NJM4741V
NJM4741D
Ta25c
DD03
NJM4741M
NJM4741V
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS SOE D fi 3öEI3fi 3 D0Q3ÖM3 CXB1106Q/Q-Y SO N Y . 4-bit Ripple Down Counter with Enable and Reset Description Pin Assignment The C X B 1 1 0 6 Q is an E C L ultra high speed m onolithic Binary Ripple Down Counter with divideb y -2 /4 /8 /1 6 outputs.
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CXB1106Q/Q-Y
24pin
QFP-24M-S01)
32pin
QFP-32C-L01)
32pin
QFP-32M-L02)
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Untitled
Abstract: No abstract text available
Text: November 1992 M il 83C154D DATA SHEET CMOS SINGLE-CHIP 8 BIT MICROCONTROLLER 83C154D : 0 TO 12 MHz 83C154D-1 : OTO 16 MHz . . 83C154D-L : OTO 6 MHZ WITH 2,7 V < Vcc < 5,5 V 83C154DF : 83C154D WITH PROTECTED ROM FEATURES • . . . POWER CONTROL MODE 256 X 8 BIT RAM
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83C154D
83C154D-1
83C154D-L
83C154DF
83C154D
80C52
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